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18 Jan 1999

Volume 74, Issue 3, pp. 329-478

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Mechanism of shape formation of three-dimensional periodic nanostructures by bias sputtering

Shojiro Kawakami, Takayuki Kawashima, and Takashi Sato

Appl. Phys. Lett. 74, 463 (1999); http://dx.doi.org/10.1063/1.123037 (3 pages) | Cited 49 times

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We previously demonstrated a process for fabricating three-dimensional (3D) periodic nanostructures composed of corrugated a-Si/SiO2 multilayers, which behave as 3D photonic crystals. In this process, bias sputtering is a key technique by which the pattern is self-forming. This letter clarifies the mechanism of the self-shaping effect of bias sputtering by comparing deposition simulation and experiments. The mechanism is decomposed into three main effects: diffuse incidence of neutral particles of film material, sputter etching by normally incident rare-gas ions, and subsequent redeposition of sputtered film material. Specifically, redeposition has a self-adjusting effect on the depth of holes or valleys, and is the key of formation of stable patterns. © 1999 American Institute of Physics.
Show PACS
81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
42.70.Qs Photonic bandgap materials

Scanning localized viscoelastic image using a quartz crystal resonator combined with an atomic force microscopy

Jong Min Kim, Sang Mok Chang, and Hiroshi Muramatsu

Appl. Phys. Lett. 74, 466 (1999); http://dx.doi.org/10.1063/1.123033 (3 pages) | Cited 13 times

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A quartz crystal resonator and an atomic force microscopy were applied for the measurement of local viscoelasticity and surface morphology. For the reduction of signal noise from the quartz crystal resonator, we designed an oscillation circuit based on a referential quartz crystal method. A polystyrene bead-coated quartz crystal was used as a signal quartz crystal, and a bare Au quartz crystal was used as a reference. By approaching the cantilever of atomic force microscopy to the surface of working quartz crystal, the differential resonant frequency in the two quartz crystals showed changes by the interaction between the tip and the quartz crystal. The changes of differential resonant frequency in the two quartz crystals were influenced by the local viscoelasticity. The image resolution of differential resonant frequency was observed under 80 nm for the polystyrene bead-coated quartz crystal. © 1999 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
46.35.+z Viscoelasticity, plasticity, viscoplasticity
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.35.B- Structure of clean surfaces (and surface reconstruction)

Application of neutron interferometry to the measurement of thin film density

W. E. Wallace, D. L. Jacobson, M. Arif, and A. Ioffe

Appl. Phys. Lett. 74, 469 (1999); http://dx.doi.org/10.1063/1.123038 (3 pages) | Cited 3 times

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The application of neutron interferometry to the measurement of the atom density of polymer thin films (<1 μm thick) supported on silicon substrates is described. Polymer films were chosen primarily for their fixed, well-defined stoichiometry; however, the technique is applicable to films of any elemental composition. The wavelength-independent phase shift of a beam of thermal neutrons passing through the sample gives a measure of the product of the film atom density, the film thickness, the lattice spacing of the silicon interferometer, and the scattering lengths of the constituent elements of the film. The film thickness was found by x-ray reflectivity while the other two parameters are well-defined quantities. The technique does not rely on complex mathematical modeling of physical processes nor on thin film standards for data interpretation. With some refinements, neutron interferometry is envisioned as an important tool in the creation of thin films having well-defined densities which will be useful in the calibration of many analysis techniques. © 1999 American Institute of Physics.
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03.75.Dg Atom and neutron interferometry
06.30.Dr Mass and density
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic

Charge storage in Co nanoclusters embedded in SiO2 by scanning force microscopy

D. M. Schaadt, E. T. Yu, S. Sankar, and A. E. Berkowitz

Appl. Phys. Lett. 74, 472 (1999); http://dx.doi.org/10.1063/1.123039 (3 pages) | Cited 61 times

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Scanning force microscopy was used to study localized charge deposition and subsequent transport in Co nanoclusters embedded in SiO2 deposited on an n-type Si substrate. Co nanoclusters were charged by applying a bias voltage pulse between tip and sample, and electrostatic force microscopy was used to image charged areas, to determine quantitatively the amount of stored charge, and to characterize the discharging process. Charge was deposited controllably and reproducibly within areas ∼20–50 nm in radius, and an exponential decay in the peak charge density was observed. Longer decay times were measured for positive than for negative charge; this is interpreted as a consequence of the Coulomb-blockade energy associated with single-electron charging of the Co nanoclusters. © 1999 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
07.79.Lh Atomic force microscopes
73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Gk Tunneling

Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n+-type doped GaAs

D. P. Wang, K. R. Wang, K. F. Huang, T. C. Huang, and A. K. Chu

Appl. Phys. Lett. 74, 475 (1999); http://dx.doi.org/10.1063/1.123040 (3 pages) | Cited 8 times

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Photoreflectance spectroscopy of surface-intrinsic n+-doped (s-i-n+) GaAs has been measured at various power densities (Ppu) of a pump beam. Many Franz–Keldysh oscillations (FKOs) were observed above the band-gap energy, which will enable the electric-field strength (F) to be determined from the periods of the FKOs. Field F thus obtained is subject to photovoltaic effects. In order to reduce the photovoltaic effects from the pump beam, Ppu was kept below 10 μW/cm2 in the previous experiments. Here, we demonstrate that the built-in field can be determined at a larger Ppu by using fast Fourier transform techniques. © 1999 American Institute of Physics.
Show PACS
78.20.Jq Electro-optical effects
72.40.+w Photoconduction and photovoltaic effects
73.25.+i Surface conductivity and carrier phenomena
73.20.At Surface states, band structure, electron density of states
81.05.Ea III-V semiconductors
02.30.Uu Integral transforms
02.30.Vv Operational calculus
02.60.-x Numerical approximation and analysis
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