The structural, electronic, and optical properties of single crystalline n-type 4H–SiC implanted with Ge atoms have been investigated through x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), Raman spectroscopy, and sheet resistivity measurements. Ge atoms are implanted under the conditions of a 300 keV ion beam energy with a dose of 2×1016 cm−2. X-ray diffraction of the Ge-implanted sample showed broadening of the Bragg peaks. A shoulder on the (0004) reflection indicated an increase in the lattice constant corresponding to substitutional Ge and implantation induced lattice damage, which was repaired through thermal annealing at 1000 °C. The diffraction pattern after annealing indicated improved crystal structure and a peak shift to a lower reflection angle of 35.2°. The composition of Ge detected through XRD was reasonably consistent with RBS measurements that indicated 1.2% Ge in a 1600-Å-thick layer near the SiC surface. Raman spectroscopy also showed fundamental differences in the spectra obtained for the Ge-implanted SiC (SiC:Ge) compared to a pure sample of SiC. Sheet resistivity measurements indicate a higher conductivity in the Ge implant by a factor of 1.94 compared to unimplanted SiC. These results have demonstrated the possibility of substitutional implantation of Ge atoms into the crystalline lattice of 4H–SiC substrates. The change in composition and properties may have numerous electronic device applications including high power, high temperature, optoelectronic, as well as high frequency device structures. © 1999 American Institute of Physics.