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25 Jan 1999

Volume 74, Issue 4, pp. 483-629

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Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode

X. Zhou, J. He, L. S. Liao, M. Lu, Z. H. Xiong, X. M. Ding, X. Y. Hou, F. G. Tao, C. E. Zhou, and S. T. Lee

Appl. Phys. Lett. 74, 609 (1999); http://dx.doi.org/10.1063/1.123161 (3 pages) | Cited 45 times

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We report the fabrication of a vacuum-deposited light-emitting device which emits light from its top surface through an Al cathode using p-type doped silicon as the anode material. Enhanced hole injection is clearly demonstrated from the p-Si anode as compared to the indium–tin–oxide (ITO) anode. The mechanisms of hole injection from both the p-Si and ITO anodes into the organic layer are investigated and a possible model based on anode surface band bending is proposed. During the operation of the organic light-emitting device, the surface band bending of the anode plays a very important role in modifying the interfacial barrier height between the anode and the organic layer. © 1999 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.20.-r Electron states at surfaces and interfaces

65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3–1.55 μm wavelength regime

St. Kollakowski, A. Strittmatter, E. Dröge, E. H. Böttcher, D. Bimberg, O. Reimann, and K. Janiak

Appl. Phys. Lett. 74, 612 (1999); http://dx.doi.org/10.1063/1.123181 (3 pages) | Cited 8 times

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We report on ultrafast waveguide-integrated metal-semiconductor-metal photodetectors based on low pressure metal organic chemical vapor deposition grown semiinsulating InP/InGaAs/InAlGaAs/InP layers. The vertically coupled detectors have an internal coupling efficiency of >90% at 1.3 and 1.55 μm wavelength for detector lengths of 30 μm. A 3 dB bandwidth of 65 GHz at 1.55 μm wavelength is achieved by employing 0.3 μm feature-size finger electrodes and an active layer thickness of 150 nm. Furthermore, we present results on high-performance devices with a buried waveguide structure fabricated by regrowth of InP:Fe. © 1999 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.82.Et Waveguides, couplers, and arrays
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

A thin-film diamond phototransistor

Stuart P. Lansley, Hui Jin Looi, Yanyang Wang, Michael D. Whitfield, and Richard B. Jackman

Appl. Phys. Lett. 74, 615 (1999); http://dx.doi.org/10.1063/1.123182 (3 pages) | Cited 10 times

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A phototransistor fabricated from thin-film diamond is reported. Polycrystalline diamond grown by chemical vapor deposition, which is p-type by virtue of near-surface hydrogen, has been used to realize optically activated metal–semiconductor field-effect transistors (FETs). Devices with thin (30 nm) Al Schottky gates and Au source and drain contacts operate as effective enhancement-mode metal–semiconductor field-effect transistors at room temperature; illumination of an electrically isolated gate leads to increased channel current, although saturation is still evident. At deep UV wavelengths (<220 nm), a photodetector gain of around 4 has been measured; the mechanism of operation has been identified as photodiode-like turn-on followed by FET amplification. © 1999 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.ub Fullerenes and related materials
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