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25 Jan 1999

Volume 74, Issue 4, pp. 483-629

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BaBi4Ti4O15 ferroelectric thin films grown by pulsed laser deposition

K. M. Satyalakshmi, M. Alexe, A. Pignolet, N. D. Zakharov, C. Harnagea, S. Senz, and D. Hesse

Appl. Phys. Lett. 74, 603 (1999); http://dx.doi.org/10.1063/1.123159 (3 pages) | Cited 35 times

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BaBi4Ti4O15 (BBiT) is an n = 4 member of the Bi-layer-structured ferroelectric oxide family (Aurivillius phases). BBiT thin films with preferred orientations have been grown on epitaxial conducting LaNiO3 electrodes on (001) SrTiO3 by pulsed laser deposition. Cross-section electron microscopy analysis reveals that the films consist of ct-axis oriented regions and mixed at- and ct-axis oriented regions. The mixed at- and ct-axis oriented regions show high surface roughness due to the rectangular crystallites protruding out of the surface, whereas the ct-axis oriented regions show a smooth surface morphology. In the mixed at- and ct-axis oriented regions, the BBiT films exhibit saturated ferroelectric hysteresis loops with remnant polarization Pr of 2 μC/cm2 and coercive field Ec of 60 kV/cm and no polarization fatigue up to 108 cycles. The regions having ct-axis orientation with a smooth surface morphology exhibit a linear P–E curve. The results show that the ferroelectric properties of a planar capacitor consisting of BBiT depend on the crystalline orientation of the film. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.80.Dj Domain structure; hysteresis
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization

Low dielectric constant Parylene-F-like films for intermetal dielectric applications

Bengi Hanyaloglu, Atilla Aydinli, Michael Oye, and Eray S. Aydi

Appl. Phys. Lett. 74, 606 (1999); http://dx.doi.org/10.1063/1.123160 (3 pages) | Cited 7 times

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We report on the dielectric properties and thermal stability of thin polymer films that are suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-like films, (–CF2–C6H4–CF2–)n, were produced by plasma deposition from a mixture of Ar and 1,4-bis(trifluoromethyl)benzene (CF3–C6H4–CF3) discharges and characterized using infrared absorption spectroscopy, spectroscopic ellipsometry, and capacitance measurements. The dielectric constant and the magnitude of the electronic and ionic contributions to the dielectric constant were determined through capacitance measurements and Kramers–Kronig analysis of the infrared absorption data. The film’s dielectric constant ranges between 2 and 2.6 depending on the deposition conditions and the largest contribution to the dielectric constant is electronic. The films deposited at 300 °C are stable above 400 °C and further optimization could push this limit to as high as 500 °C. © 1999 American Institute of Physics.
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77.55.-g Dielectric thin films
68.60.Dv Thermal stability; thermal effects
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.66.Qn Polymers; organic compounds
77.22.Ch Permittivity (dielectric function)
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