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25 Jan 1999

Volume 74, Issue 4, pp. 483-629

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Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers

M. Kamp, J. Hofmann, A. Forchel, F. Schäfer, and J. P. Reithmaier

Appl. Phys. Lett. 74, 483 (1999); http://dx.doi.org/10.1063/1.123164 (3 pages) | Cited 40 times

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We have developed gain-coupled lasers based on metal gratings patterned laterally to the laser ridge. For narrow ridge waveguides, the evanescent field of the laser mode couples to the grating. The fabrication requires no overgrowth steps and can be applied to all material systems. Ridge-waveguide gain-coupled lasers with threshold current densities of 600 A/cm2 were obtained from InGaAs/AlGaAs GRINSCH structures. The continuous wave threshold currents are around 9 mA for a cavity with 600 μm length and 2.5 μm width. Monomode emission up to output power levels of 64 mW and sidemode suppression ratios of over 45 dB have been obtained. © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.79.Ry Gradient-index (GRIN) devices
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Experimental demonstration of photonic crystal based waveguides

B. Temelkuran and E. Ozbay

Appl. Phys. Lett. 74, 486 (1999); http://dx.doi.org/10.1063/1.123163 (3 pages) | Cited 52 times

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We report the experimental demonstration of waveguides built around layer-by-layer photonic crystals. An air gap introduced between two photonic crystal walls was used as the waveguide. We observed full (100%) transmission of the electromagnetic (EM) waves through these planar waveguide structures within the frequency range of the photonic band gap. The dispersion relations obtained from the experiment were in good agreement with the predictions of our waveguide model. We also observed 35% transmission for the EM waves traveling through a sharp bend in an L-shaped waveguide carved inside the photonic crystal. © 1999 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials

Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers

Joachim Piprek, Patrick Abraham, and John E. Bowers

Appl. Phys. Lett. 74, 489 (1999); http://dx.doi.org/10.1063/1.123165 (3 pages) | Cited 21 times

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We investigate quantum efficiency limitations in InGaAsP/InP multiquantum-well (MQW) laser diodes emitting at 1.5 μm. At room temperature, the internal differential efficiency above threshold is found to be reduced mainly by increasing Auger recombination and spontaneous emission within the quantum wells. These carrier loss increments are commonly assumed negligible due to MQW carrier density clamping. Even with clamped average carrier density, increasing nonuniformity of the quantum well carrier population leads to enhanced losses. We analyze these loss enhancements using an advanced laser simulation software. Excellent agreement between measurements and simulations is obtained. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Waveguide fabrication and high-speed in-line intensity modulation in 4-N,N-4′-dimethylamino-4′-N′-methyl-stilbazolium tosylate

F. Pan, K. McCallion, and M. Chiappetta

Appl. Phys. Lett. 74, 492 (1999); http://dx.doi.org/10.1063/1.123956 (3 pages) | Cited 22 times

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We report the formation of thin-film waveguides of organic crystals by precision optical polishing and the fabrication of an electro-optic intensity modulation device based on a thin-film waveguide of N,N-4′-dimethylamino-4′-N′-methyl-stilbazolium tosylate (DAST®) as an overlay on a side-polished fiber (SPF). Successful fabrication of single-crystal DAST® waveguides with thicknesses in the 20–25 μm range have been produced. The waveguides were investigated via an evanescent coupling technique using side-polished fibers rather than traditional end-firing methods. Surface quality is believed to have been sufficient for low-loss propagation. Electrodes were added to the SPF/DAST® overlay architecture and intensity modulation observed out to 18 GHz. The device frequency response is believed to extend beyond 100 GHz under optimum conditions. © 1999 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
42.70.Jk Polymers and organics

Thickness dependence of second-harmonic generation in thin films fabricated from ionically self-assembled monolayers

J. R. Heflin, C. Figura, D. Marciu, Y. Liu, and R. O. Claus

Appl. Phys. Lett. 74, 495 (1999); http://dx.doi.org/10.1063/1.123166 (3 pages) | Cited 32 times

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An ionically self-assembled monolayer (ISAM) technique for thin-film deposition has been employed to fabricate materials possessing the noncentrosymmetry that is requisite for a second-order, χ(2), nonlinear optical response. As a result of the ionic attraction between successive layers, the ISAM χ(2) films self-assemble into a noncentrosymmetric structure that has exhibited no measurable decay of χ(2) at room temperature over a period of more than one year. The second-harmonic intensity of the films exhibits the expected quadratic dependence on film thickness up to at least 100 bilayers, corresponding to a film thickness of 120 nm. The polarization dependence of the second-harmonic generation yields a value of 35° for the average tilt angle of the nonlinear optical chromophores away from the surface normal. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Wc Optical coatings

CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, I. V. Sedova, A. A. Sitnikova, P. S. Kop’ev, Zh. I. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr

Appl. Phys. Lett. 74, 498 (1999); http://dx.doi.org/10.1063/1.123167 (3 pages) | Cited 36 times

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This letter reports on the self-organized growth of nanoscale dot-like CdSe-based islands during molecular beam epitaxy of CdSe/ZnSe nanostructures with a CdSe thickness between 0.75 and 3.0 monolayers. An increase in the nominal CdSe thickness results in a higher density of islands (up to 2×1010 cm−2) and is accompanied by dramatic enhancement of the photoluminescence efficiency. The density of large relaxed islands appears to saturate at a value of (3–4)×109 cm−2. Room temperature (Zn, Mg)(S, Se)-based optically pumped lasers with an extremely low threshold (less than 4 kW/cm2), as well as (Be, Mg, Zn)Se-based injection laser diodes using a single (2.5–2.8) monolayer thick CdSe active region, both demonstrating significantly enhanced degradation stability, have been fabricated and studied. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Dz II-VI semiconductors
78.55.Et II-VI semiconductors
42.60.By Design of specific laser systems
78.66.Hf II-VI semiconductors
68.55.-a Thin film structure and morphology
81.07.-b Nanoscale materials and structures: fabrication and characterization

Near-field photolithography with a solid immersion lens

L. P. Ghislain, V. B. Elings, K. B. Crozier, S. R. Manalis, S. C. Minne, K. Wilder, G. S. Kino, and C. F. Quate

Appl. Phys. Lett. 74, 501 (1999); http://dx.doi.org/10.1063/1.123168 (3 pages) | Cited 54 times

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We have exposed 190 nm lines in photoresist by focusing a laser beam (λ=442 nm) in a solid immersion lens (SIL) that is mounted on a flexible cantilever and scanned by a modified commercial atomic force microscope. The scan rate was 1 cm/s, which is several orders of magnitude faster than typical reports of near-field lithography using tapered optical fibers. The enhanced speed is a result of the high optical efficiency (about 10−1) of the SIL. Once exposed with the SIL, the photoresist was developed and the pattern was transferred to the silicon substrate by plasma etching. © 1999 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
42.79.Bh Lenses, prisms and mirrors
07.79.Lh Atomic force microscopes
07.79.Fc Near-field scanning optical microscopes

Active reflection via a phase-insensitive quadratic nonlinear interaction within a microcavity

Crina Cojocaru, Jordi Martorell, R. Vilaseca, J. Trull, and Eugenio Fazio

Appl. Phys. Lett. 74, 504 (1999); http://dx.doi.org/10.1063/1.123169 (3 pages) | Cited 8 times

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The reflectivity of a microcavity filled with a quadratic nonlinear material is shown to be actively changed by the interaction of two waves. Within this microcavity, the reflection coefficient of a weak wave at the fundamental frequency is changed from almost 0% to a value in the vicinity of 100% by the simultaneous incidence of an intense wave at the second-harmonic frequency. This change in reflectivity is shown to be in a large degree insensitive to the input phase difference between the two waves. © 1999 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.25.Gy Edge and boundary effects; reflection and refraction

High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R-plane sapphire

M. Wraback, H. Shen, S. Liang, C. R. Gorla, and Y. Lu

Appl. Phys. Lett. 74, 507 (1999); http://dx.doi.org/10.1063/1.124223 (3 pages) | Cited 76 times

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An optically addressed ultraviolet light modulator has been demonstrated which exploits the optical anisotropy in a ZnO film epitaxially grown on (0112) sapphire. This device achieves both high contrast and high speed by exploiting the anisotropic bleaching of the anisotropic absorption and concomitant ultrafast polarization rotation near the lowest exciton resonances produced by femtosecond ultraviolet pulses. The resultant modulation is characterized by a contrast ratio of 70:1, corresponding to a dynamic polarization rotation of 12°, and it decays to a quasiequilibrium value within 100 ps. © 1999 American Institute of Physics.  
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42.79.Hp Optical processors, correlators, and modulators
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Hf II-VI semiconductors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.40.Fy Semiconductors

Generation of dark pulse trains from continuous-wave light using cross-phase modulation in optical fibers

Wen-hua Cao, Shenping Li, and Kam-tai Chan

Appl. Phys. Lett. 74, 510 (1999); http://dx.doi.org/10.1063/1.123170 (3 pages) | Cited 2 times

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A technique for the generation of dark pulse trains from continuous-wave (cw) light is presented. It consists of co-propagating a cw signal with intense pump pulses in an optical fiber where both the signal and the pump experience normal group-velocity dispersion. The pump imposes a positive frequency chirp on the signal through cross-phase modulation while normal dispersion tends to chip out the signal energy in the chirped region, thus leading to the generation of a dark pulse train with a repetition rate identical to that of the pump. A train of 30.3 ps dark pulses has been observed when using 31.7 ps pump pulses from an actively mode-locked fiber ring laser. The experimental results agree well with numerical simulations. © 1999 American Institute of Physics.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
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