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1 Feb 1999

Volume 74, Issue 5, pp. 635-772

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Quantum grid infrared photodetectors

L. P. Rokhinson, C. J. Chen, D. C. Tsui, G. A. Vawter, and K. K. Choi

Appl. Phys. Lett. 74, 759 (1999); http://dx.doi.org/10.1063/1.123302 (3 pages) | Cited 5 times

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In this letter we introduce a quantum well infrared photodetector (QWIP) structure, which we refer to as the quantum grid infrared photodetector (QGIP). In an ideal structure, a grid pattern with very narrow linewidth is created in the QWIP active region to achieve lateral electron confinement, thereby improving its absorption as well as transport characteristics. In order to realize this detector structure, we have fabricated QGIPs with line patterns of lithographical linewidths wl ranging from 0.1 to 4 μm, allowing for possible sidewall depletion. Low-damage reactive ion beam etching was employed to produce vertical sidewalls. From the experimental data, although the best detector performance occurs at wl ≈ 1.5 μm, the detector starts to improve when wl<0.5 μm, indicating a possible quantum confinement effect. © 1999 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.65.Cf Surface cleaning, etching, patterning

High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi

Appl. Phys. Lett. 74, 762 (1999); http://dx.doi.org/10.1063/1.123303 (3 pages) | Cited 66 times

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We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal–semiconductor–metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were <10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10−24 A2/Hz) up to 5 V, for the undoped GaN MSM detector. © 1999 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
06.60.Jn High-speed techniques (microsecond to femtosecond)
78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors

An AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector operating at 3.4 μm and 205 K

Jung Hee Lee, Jung-Chi Chiang, Sheng S. Li, and P. J. Kannam

Appl. Phys. Lett. 74, 765 (1999); http://dx.doi.org/10.1063/1.123304 (3 pages) | Cited 8 times

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A high-performance n-type AlAs/InGaAs/AlAs/InAlAs double-barrier quantum well infrared photodetector grown on InP with photovoltaic (PV) and photoconductive (PC) dual-mode operation has been fabricated and characterized in this work. The PV and PC detection scheme employs the intersubband transition from the ground bound state to the quasibound excited state in the double-barrier well. The peak responsivities for the PV mode at zero bias and PC mode at Vb = −3 V were found to be 19 and 159 mA/W at λp = 3.4 μm and T = 77 K, respectively. The corresponding background limited performance (BLIP) detectivity (DBLIP∗) was given by 8.9×1010 cm Hz1/2/W for the PV mode and non-BLIP D∗ = 5.36×1010 cm Hz1/2/W for the PC mode. This device is capable of operating up to 205 K with good performance characteristics. © 1999 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects

Ballistic transport of electrons in T-shaped quantum waveguides

P. Debray, O. E. Raichev, M. Rahman, R. Akis, and W. C. Mitchel

Appl. Phys. Lett. 74, 768 (1999); http://dx.doi.org/10.1063/1.123305 (3 pages) | Cited 7 times

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Ballistic transport of electrons through T-shaped quantum waveguides with stubs of small lithographic area (0.075 μm2) has been studied. Measurements of the conductance G at 90 mK as a function of the top gate voltage, which changes the stub height, show well-defined, almost periodic oscillations in G. A theoretical analysis, involving estimation of the shape and size of the device under gate biases and computation of the transmission probabilities from numerical analysis of the Schrödinger equation, successfully explains the main features of the experimental observations. The observed minima in G can be attributed to reflection resonances of electron waves from the resonant states of the stub cavity. This work establishes the potential of electron stub tuners in microelectronics applications. © 1999 American Institute of Physics.
Show PACS
73.23.Ad Ballistic transport
85.35.Ds Quantum interference devices
73.50.Fq High-field and nonlinear effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
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