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8 Feb 1999

Volume 74, Issue 6, pp. 777-892

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Comment on “Noise gain and detectivity of n-type GaAs/AlAs/AlGaAs quantum well infrared photodetectors” [Appl. Phys. Lett. 73, 1251 (1998)]

B. F. Levine

Appl. Phys. Lett. 74, 892 (1999); http://dx.doi.org/10.1063/1.123957 (1 page) | Cited 1 time

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Abstract Unavailable
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.05.Ea III-V semiconductors
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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Response to “Comment on ‘Noise gain and detectivity of n-type GaAs/AlGaAs quantum well infrared photodetectors’ ” [Appl. Phys. Lett. 74, 892 (1999)]

C. Schönbein, H. Schneider, R. Rehm, and M. Walther

Appl. Phys. Lett. 74, 892 (1999); http://dx.doi.org/10.1063/1.123958 (1 page)

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors
73.50.Td Noise processes and phenomena
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