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8 Feb 1999

Volume 74, Issue 6, pp. 777-892

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A photoelectron spectroscopy study on the indium tin oxide treatment by acids and bases

F. Nüesch, L. J. Rothberg, E. W. Forsythe, Quoc Toan Le, and Yongli Gao

Appl. Phys. Lett. 74, 880 (1999); http://dx.doi.org/10.1063/1.123397 (3 pages) | Cited 88 times

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We report on the chemical adsorption of acids and bases on indium tin oxide (ITO). Ultraviolet photoelectron spectroscopy was used to measure the work function of the treated ITO and atomic surface concentrations were determined by x-ray photoelectron spectroscopy. The acid treatments yield work-function shifts as high as 0.7 eV compared to the nontreated ITO. Huge shifts in the work function are also obtained for the treatments with bases and are opposite to those obtained with the acids. These dramatic shifts are indicative of a double ionic surface layer. The importance of an appropriate plasma treatment prior to the chemical adsorption of acids or bases is discussed in terms of surface acido-basicity. © 1999 American Institute of Physics.
Show PACS
79.60.Dp Adsorbed layers and thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions
81.65.-b Surface treatments

Development of a low-temperature GaN chemical vapor deposition process based on a single molecular source H2GaN3

Jeff McMurran, J. Kouvetakis, and David J. Smith

Appl. Phys. Lett. 74, 883 (1999); http://dx.doi.org/10.1063/1.123398 (3 pages) | Cited 16 times

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We report the development of a simple and highly efficient chemical approach to growing GaN thin films between 150 and 700 °C using a single molecular source, H2GaN3. Uncommonly low-temperature growth of nanocrystalline GaN films with a wurtzite structure is readily achieved at 150–200 °C from the thermodynamically driven decomposition of the precursor via complete elimination of the stable and relatively benign H2 and N2 by-products. Highly oriented columnar growth of crystalline material is obtained on Si at 350–700 °C and heteroepitaxial growth on sapphire at 650 °C. Crucial advantages of this precursor include: significant vapor pressure which permits rapid mass transport at 22 °C; and the facile decomposition pathway of stoichiometric elimination of H2 and N2 over a wide temperature and pressure range which allows film growth at very low temperatures and pressures (10−4–10−8 Torr) with growth rates up to 80 nm per minute. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Resistless patterning of Si for processing

Kumar Shiralagi and Raymond Tsui

Appl. Phys. Lett. 74, 886 (1999); http://dx.doi.org/10.1063/1.123399 (3 pages) | Cited 5 times

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Results are presented on our efforts in the patterning of Si wafers without using photoresist. The process is similar to the recently reported surface modification of GaAs with ultraviolet (UV) light to produce a stable mask surface. However, in the absence of an easily modifiable surface oxide on Si, a hydrogen-passivated and oxide-free Si surface is exposed to UV light in the presence of oxygen to form an oxide in the irradiated regions. Selective Si growth and etching were demonstrated on wafers so patterned, and preliminary results showing the promise of this technique are reported in this letter. © 1999 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.65.Cf Surface cleaning, etching, patterning
81.65.Rv Passivation
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Effect of oxygen plasma treatment on field emission characteristics of boron–nitride films

Takashi Sugino and Shigeru Tagawa

Appl. Phys. Lett. 74, 889 (1999); http://dx.doi.org/10.1063/1.123400 (3 pages) | Cited 12 times

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Field emission properties of boron–nitride (BN) films synthesized by plasma-assisted chemical vapor deposition are investigated. There appears a hysteresis of the field emission characteristic for as-grown BN films. It is found that the hysteresis is suppressed for the BN films treated with O2 plasma. Moreover, no significant degradation of the field emission characteristics occurs although a slight generation of B2O3 is detected at the BN surface by O2 plasma treatment. © 1999 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.05.Ea III-V semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.-b Surface treatments
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