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8 Feb 1999

Volume 74, Issue 6, pp. 777-892

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Propagation of light beams along line defects formed in a-Si/SiO2 three-dimensional photonic crystals: Fabrication and observation

Osamu Hanaizumi, Yasuo Ohtera, Takashi Sato, and Shojiro Kawakami

Appl. Phys. Lett. 74, 777 (1999); http://dx.doi.org/10.1063/1.123364 (3 pages) | Cited 12 times

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We have fabricated optical waveguides in three-dimensional (3D) photonic crystals and observed propagation of light beams. Light beams with wavelengths of 1.15 μm propagate along the line defects formed in the 3D photonic crystals. The 3D photonic crystals consist of a-Si/SiO2 multilayers laminated alternately by rf bias sputtering on a periodically hollowed silica substrate with a triangular lattice. The pit diameter is 0.2 μm and the pitch of the lattice is 0.5 μm. The thickness of each laminated layer is 0.2 μm. Line defects are formed normal to the surface by laminating a-Si/SiO2 multilayers with ten periods on the substrate in which the corrugation patterns have been omitted in a certain area corresponding to the core. The measurements of transmittance normal to the surface show that the wavelength of 1.15 μm used in observation of propagation is in the passband for the one-dimensional periodic region corresponding to the core and in the stop band for the 3D periodic region corresponding to the cladding, respectively. Measurements show good agreement with finite-difference time-domain calculations. © 1999 American Institute of Physics.  
Show PACS
42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.15.Cd Deposition by sputtering
78.66.Jg Amorphous semiconductors; glasses
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.40.Fy Semiconductors
81.05.Gc Amorphous semiconductors

Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Masataka Higashiwaki, Satoshi Shimomura, Satoshi Hiyamizu, and Seiji Ikawa

Appl. Phys. Lett. 74, 780 (1999); http://dx.doi.org/10.1063/1.123365 (3 pages) | Cited 33 times

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Self-organized GaAs/(GaAs)4(AlAs)2 quantum-wire (QWR) lasers were grown on (775)B-oriented GaAs substrates by molecular-beam epitaxy. The QWRs were naturally formed at thick parts in the GaAs/(GaAs)4(AlAs)2 quantum well with a corrugated AlAs-on-GaAs upper interface and a flat GaAs-on-AlAs lower interface. The density of the QWRs was as high as 8×106 cm−1. Stripe-geometry lasers with the self-organized (775)B GaAs/(GaAs)4(AlAs)2 QWRs as an active region oscillated at 20 °C with threshold current densities of about 3 kA/cm2 for uncoated mirrors. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors

Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers

Weidong Zhou, Omar Qasaimeh, Jamie Phillips, Sanjay Krishna, and Pallab Bhattacharya

Appl. Phys. Lett. 74, 783 (1999); http://dx.doi.org/10.1063/1.123366 (3 pages) | Cited 21 times

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Efficient wavelength switching is demonstrated in an In0.4Ga0.6As/GaAs self-organized quantum dot laser with an intracavity absorber section. A wavelength shift of ∼15 nm, believed to be caused by a shift of lasing between the bound states of the quantum dot, is obtained for a bias change of 6 V. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Pc Optical bistability, multistability, and switching, including local field effects
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Three-dimensional photonic crystal structures achieved with two-photon-absorption photopolymerization of resin

Hong-Bo Sun, Shigeki Matsuo, and Hiroaki Misawa

Appl. Phys. Lett. 74, 786 (1999); http://dx.doi.org/10.1063/1.123367 (3 pages) | Cited 220 times

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Three-dimensional photonic crystal structures were fabricated with laser microfabrication techniques through two-photon-absorption photopolymerization of resin. Significant band-gap effects in the infrared wavelength region were observed from “layer-by-layer” structures. © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
82.35.-x Polymers: properties; reactions; polymerization
78.30.Jw Organic compounds, polymers
82.50.-m Photochemistry
42.62.-b Laser applications

Arrays of distributed-Bragg-reflector waveguide lasers at 1536 nm in Yb/Er codoped phosphate glass

David L. Veasey, David S. Funk, Norman A. Sanford, and Joseph S. Hayden

Appl. Phys. Lett. 74, 789 (1999); http://dx.doi.org/10.1063/1.123368 (3 pages) | Cited 34 times

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We have demonstrated an array of monolithic, single-frequency-distributed-Bragg-reflector (DBR), waveguide lasers operating near 1536 nm wavelengths. The lasers were fabricated by forming waveguides in Yb/Er-codoped phosphate glass by ion exchange. The slope efficiency for each laser as a function of launched pump power is 26% and the thresholds occur at 50 mW of launched pump power. An output power of 80 mW was achieved with 350 mW of coupled pump power. Each laser exhibits stable operation on a single longitudinal mode and all have linewidths less than 500 kHz. A comb of waveguides with varying effective indices allows the selection of wavelength using a single-period grating. © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Cr Fabrication techniques; lithography, pattern transfer

Observation of net gain in the yellow band of K2 excimer by electron-beam pumping

Da Xing, Qi Wang, Shi-ci Tan, and Ken-ichi Ueda

Appl. Phys. Lett. 74, 792 (1999); http://dx.doi.org/10.1063/1.123369 (3 pages) | Cited 1 time

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The design of a high-temperature cell appropriate for an electron-beam transverse pump of alkali dimer excimer lasers is described. By using the cell, an amplified spontaneous emission and a maximum net gain coefficient of 3% cm−1 of the K2 yellow band (574 nm) were observed from the e-beam-excited mixture of K/K2 vapor with argon buffer gas. The dissociative recombination of K3+ is discussed as an efficient formation process of the upper state by the electron-beam pumping. © 1999 American Institute of Physics.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.50.Dq Fluorescence and phosphorescence spectra
42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
34.80.Ht Dissociation and dissociative attachment
34.80.Lx Recombination, attachment, and positronium formation
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