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8 Feb 1999

Volume 74, Issue 6, pp. 777-892

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Substitutional carbon incorporation in epitaxial Si1−yCy alloys on Si(001) grown by molecular beam epitaxy

H. J. Osten, J. Griesche, and S. Scalese

Appl. Phys. Lett. 74, 836 (1999); http://dx.doi.org/10.1063/1.123384 (3 pages) | Cited 21 times

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We show that C incorporation kinetics depend significantly on the carbon concentration. The carbon substitutionality (fraction of substitutional incorporated carbon atoms) is strongly influenced by the growth conditions, such as growth temperature and Si growth rate. In addition, reduction in the growth temperature and increase of the growth rate can both increase the substitutional carbon fraction. This behavior is well described by a kinetic model, with the energy barrier and preexponential frequency factor decreasing with increasing carbon concentration. Very low carbon concentrations (in the dopant range) can be predominantly incorporated substitutionally, independent of the growth temperature. At higher C concentrations (in the percentage range), the substitutional carbon fraction is shifted to lower values. We predict the existence of an upper limit for substitutional C incorporation, with its value depending on the specific growth conditions. © 1999 American Institute of Physics.
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81.05.Hd Other semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.Nq Composition and phase identification
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.J- Point defects and defect clusters

Observation of negative-U centers in 6H silicon carbide

C. G. Hemmingsson, N. T. Son, and E. Janzén

Appl. Phys. Lett. 74, 839 (1999); http://dx.doi.org/10.1063/1.123401 (3 pages) | Cited 19 times

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Two negative-U centers in 6H SiC have been observed and characterized using capacitance transient techniques. These two defects give rise to one acceptor level (−/0) and one donor level (+/0) each in the band gap. The donor and the acceptor level have inverted ordering, i.e., the thermal ionization energy of the acceptor level is larger than that of the donor level. Direct evidence for the inverted ordering of the acceptor and donor levels and temperature dependence studies of the electron capture cross sections of the acceptor levels are presented. © 1999 American Institute of Physics.
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71.55.Ht Other nonmetals

Two-band tunneling currents in metal-oxide-semiconductor capacitors at the transition from direct to Fowler–Nordheim tunneling regime

S. Okhonin, P. Fazan, G. Guegan, S. Deleonibus, and F. Martin

Appl. Phys. Lett. 74, 842 (1999); http://dx.doi.org/10.1063/1.123385 (2 pages) | Cited 6 times

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The conduction and valence band tunneling currents in ultrathin SiO2 films are studied. The slopes of the current–voltage characteristic agree well with the simulations performed. Conduction band current oscillations due to interference of the electrons from the inversion channel at the oxide/gate interface are observed. The shape of the slope of the valence band current in Fowler–Nordheim regime can be explained by the interference of the valence band electron wave at the oxide/gate interface. © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.40.Gk Tunneling
73.61.Ng Insulators
71.20.Ps Other inorganic compounds
84.32.Tt Capacitors

Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip

Ichiro Tanaka, I. Kamiya, H. Sakaki, N. Qureshi, S. J. Allen, and P. M. Petroff

Appl. Phys. Lett. 74, 844 (1999); http://dx.doi.org/10.1063/1.123402 (3 pages) | Cited 52 times

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Atomic force microscopy with a conductive probe has been used to study both the topography and the electronic properties of 10-nm-scale self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy on n-type GaAs. The current flowing through the conductive probe normal to the sample surface is measured for imaging local conductance, while the deflection of cantilever is optically detected for disclosing geometrical structure. The conductance on InAs QDs is found to be much larger than that on the wetting layer, allowing imaging of QDs through measurements of local current. We attribute this change in conductance to the local modification of surface band bending associated with surface states on InAs QD surface. Mechanisms of electron transport through QDs are discussed based on current–voltage characteristics measured on QDs of various sizes. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.25.+i Surface conductivity and carrier phenomena

Heterostructure P-channel metal–oxide–semiconductor transistor utilizing a Si1−x−yGexCy channel

S. John, S. K. Ray, E. Quinones, S. K. Oswal, and S. K. Banerjee

Appl. Phys. Lett. 74, 847 (1999); http://dx.doi.org/10.1063/1.123386 (3 pages) | Cited 10 times

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The dc characteristics of Si1−x−yGexCy P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) were evaluated between room temperature and 77 K and were compared to those of Si and Si1−xGex PMOSFETs. The low-field effective mobility in Si1−x−yGexCy devices is found to be higher than that of Si1−xGex (grown in the metastable regime) and Si devices at low gate bias and room temperature. However, with increasing transverse fields and with decreasing temperatures, Si1−x−yGexCy devices show degraded performance. The enhancement at low gate bias is attributed to the strain stabilization effect of C. This application of Si1−x−yGexCy in PMOSFETs demonstrates potential benefits in the use of C for strain stabilization of the binary alloy. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
73.50.Dn Low-field transport and mobility; piezoresistance

Investigation of excess carrier diffusion in nitride semiconductors with near-field optical microscopy

Andrey Vertikov, Ilker Ozden, and Arto V. Nurmikko

Appl. Phys. Lett. 74, 850 (1999); http://dx.doi.org/10.1063/1.123387 (3 pages) | Cited 20 times

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We describe a high-spatial-resolution optical technique to study transport properties in semiconductors, applicable especially to heterostructures characterized by short-carrier diffusion lengths on the 100 nm scale. The method involves spatial near-field optical imaging of photoluminescence profiles created by an interference grating within a total internal reflection configuration. We illustrate the method by applying it as a diagnostic tool to a contemporary problem, namely, to acquire insight into electron–hole pair recombination in InGaN, a blue light-emitting medium exhibiting pronounced nonrandom alloy characteristics. © 1999 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Cr III-V semiconductors
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