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15 Feb 1999

Volume 74, Issue 7, pp. 899-1050

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Distributed Bragg reflectors based on AlN/GaN multilayers

H. M. Ng, D. Doppalapudi, E. Iliopoulos, and T. D. Moustakas

Appl. Phys. Lett. 74, 1036 (1999); http://dx.doi.org/10.1063/1.123447 (3 pages) | Cited 35 times

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Show Abstract
A 20.5 period distributed Bragg reflector stack based on AlN/GaN has been grown on (0001) sapphire by electron cyclotron resonance plasma-assisted molecular-beam epitaxy. Peak reflectance up to 95% was observed at a wavelength of 392.5 nm. Cross-section transmission electron microscopy studies indicate that the interface of GaN-on-AlN is always sharper and more distinct than the interface of AlN-on-GaN. This is attributed to the different growth modes of AlN and GaN. When AlN grows on GaN, it tends to grow in a two-dimensional mode (Frank–van der Merwe mode) whereas GaN grows on AlN in a three-dimensional mode (Stranski–Krastanov mode). Based on these findings, the experimental reflectance data were simulated using the transmission matrix method. © 1999 American Institute of Physics.
Show PACS
42.79.Wc Optical coatings
42.79.Bh Lenses, prisms and mirrors
78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.86.+b Optical workshop techniques
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.05.Ea III-V semiconductors

Mode-discriminating photoconductor and coplanar waveguide circuit for picosecond sampling

N. Zamdmer, Qing Hu, S. Verghese, and A. Förster

Appl. Phys. Lett. 74, 1039 (1999); http://dx.doi.org/10.1063/1.123448 (3 pages) | Cited 5 times

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We introduce a circuit for ultrafast measurements with coplanar waveguide transmission lines. The circuit contains photoconductive switches that allow tunable generation and reception of a coplanar waveguide’s two propagating modes. The circuit has fewer discontinuities than other circuits with similar capabilities and does not require airbridges. We show how the photoconductive switch can be biased to compensate for pump laser beam misalignment, and that a circuit composed of two chips making up a hybrid has only 4% broader temporal resolution than a circuit integrated on a single chip. We measured a minimum temporal resolution of 2.4 ps. © 1999 American Institute of Physics.
Show PACS
84.40.Az Waveguides, transmission lines, striplines
85.60.-q Optoelectronic devices
06.60.Jn High-speed techniques (microsecond to femtosecond)

Negative differential resistance due to single-electron switching

C. P. Heij, D. C. Dixon, P. Hadley, and J. E. Mooij

Appl. Phys. Lett. 74, 1042 (1999); http://dx.doi.org/10.1063/1.123449 (3 pages) | Cited 24 times

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We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/AlxOy islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport. © 1999 American Institute of Physics.
Show PACS
73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Gv Single electron devices
73.50.Fq High-field and nonlinear effects
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