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15 Feb 1999

Volume 74, Issue 7, pp. 899-1050

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Growth and electrostrictive properties of Pb(Mg1/3Nb2/3)O3 crystals

Sang-Goo Lee, Ralph G. Monteiro, Robert S. Feigelson, Howard S. Lee, Myeongkyu Lee, and Seung-Eek Park

Appl. Phys. Lett. 74, 1030 (1999); http://dx.doi.org/10.1063/1.123445 (3 pages) | Cited 10 times

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Transparent and stoichiometric lead-magnesium-niobate crystals were grown by the Bridgman method. Crystals of centimeter size were obtained without material loss by employing self-seeded and seeded techniques using sealed platinum crucibles. The fastest growth direction was found to be pseudocubic 〈111〉. As-grown crystals showed a broad absorption band centered near λ = 600 nm and an OH absorption near λ = 2830 nm. The electrostrictive coefficient Q11 was determined to be 1.15×10−2 m4 C−2 from the measured strain and polarization. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
81.10.Fq Growth from melts; zone melting and refining
77.80.-e Ferroelectricity and antiferroelectricity
78.40.Ha Other nonmetallic inorganics
78.30.Hv Other nonmetallic inorganics
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization

The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films

Wontae Chang, James S. Horwitz, Adriaan C. Carter, Jeffrey M. Pond, Steven W. Kirchoefer, Charles M. Gilmore, and Douglas B. Chrisey

Appl. Phys. Lett. 74, 1033 (1999); http://dx.doi.org/10.1063/1.123446 (3 pages) | Cited 147 times

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Oriented, single phase thin films (∼5000 Å thick) of Ba0.5Sr0.5TiO3 (BST) have been deposited onto (100) MgO and (100) LaAlO3 (LAO) substrates using pulsed laser deposition. The capacitance and dielectric Q (1/tan δ) of as-deposited and annealed films have been measured from 1 to 20 GHz as a function of electric field (0–80 kV/cm) at room temperature using interdigitated Ag electrodes deposited on top of the film. For films deposited onto MgO, it is observed that, after a postdeposition anneal (1000–1200 °C), the dielectric constant decreases and the dielectric Q increases. For films deposited onto LAO, a postdeposition anneal (⩽ 1000 °C) resulted in a significant increase in the dielectric constant and a decrease in Q. The observed dielectric properties of the BST films are attributed to the changes in film stress, which affects the extent of ionic polarization. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.40.-x Radiowave and microwave (including millimeter wave) technology
77.55.-g Dielectric thin films
68.60.Dv Thermal stability; thermal effects
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Fg Pulsed laser ablation deposition
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
61.72.Cc Kinetics of defect formation and annealing
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