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15 Feb 1999

Volume 74, Issue 7, pp. 899-1050

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Direct measurement of the destruction of charge quantization in a single-electron box

David S. Duncan, Carol Livermore, Robert M. Westervelt, Kevin D. Maranowski, and Arthur C. Gossard

Appl. Phys. Lett. 74, 1045 (1999); http://dx.doi.org/10.1063/1.123450 (3 pages) | Cited 15 times

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We report here direct measurements of the destruction of charge quantization in a single-electron box, the first over the full range of box-to-lead conductance values from G ≅ 0 to the conductance quantum GQ = 2e2/h, using a sensitive single-electron transistor (SET) electrometer. The sensitivity of the electrometer is measured to be δq ≅ 6×10−5e/√Hz and its superiority to conductance measurements of charge fluctuations is clearly demonstrated. As the rate of quantum mechanical tunneling from the box to its lead is increased, the quantization of charge is destroyed, disappearing entirely at G = GQ in agreement with theory. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.35.Gv Single electron devices

Imaging of current paths and defects in Al and TiSi interconnects on very-large-scale integrated-circuit chips using near-field optical-probe stimulation and resulting resistance change

K. Nikawa, T. Saiki, S. Inoue, and M. Ohtsu

Appl. Phys. Lett. 74, 1048 (1999); http://dx.doi.org/10.1063/1.123451 (3 pages) | Cited 2 times

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The optical-beam-induced resistance-change-detection (OBIRCH) method has been improved by using a near-field optical probe as the heat source instead of a laser beam. The near-field OBIRCH method has two advantages over the conventional one: (1) its spatial resolution is higher (50 vs 400 nm) and (2) the optical-probe-induced resistance change caused by heating can be observed using a metallized probe without interference from a photocurrent created by electron–hole-pair generation. In the conventional-OBIRCH method, the laser beam creates not only a resistance change, but also a photocurrent that can mask the resistance change signals. © 1999 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
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