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15 Feb 1999

Volume 74, Issue 7, pp. 899-1050

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Differential carrier lifetime in oxide-confined vertical cavity lasers obtained from electrical impedance measurements

G. E. Giudice, D. V. Kuksenkov, H. Temkin, and K. L. Lear

Appl. Phys. Lett. 74, 899 (1999); http://dx.doi.org/10.1063/1.123403 (3 pages) | Cited 3 times

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Differential carrier lifetime measurements were performed on index-guided oxide-confined vertical cavity surface emitting lasers operating at 980 nm. Lifetimes were extracted from laser impedance measurements at subthreshold currents, with device size as a parameter, using a simple small-signal model. The carrier lifetimes ranged from 21 ns at 9 μA, to about 1 ns at a bias close to threshold. For a 6×6 μm2 oxide aperture device the threshold carrier density was nth ∼ 2×1018 cm−3. The effect of carrier diffusion was also considered. An ambipolar diffusion coefficient of D ∼ 11 cm2 s−1 was obtained. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ee Mobility edges; hopping transport

Multiphoton detection using visible light photon counter

Jungsang Kim, Shigeki Takeuchi, Yoshihisa Yamamoto, and Henry H. Hogue

Appl. Phys. Lett. 74, 902 (1999); http://dx.doi.org/10.1063/1.123404 (3 pages) | Cited 163 times

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Visible light photon counters feature noise-free avalanche multiplication and narrow pulse height distribution for single photon detection events. Such a well-defined pulse height distribution for a single photon detection event, combined with the fact that the avalanche multiplication is confined to a small area of the whole detector, opens up the possibility for the simultaneous detection of two photons. In this letter, we investigated this capability using twin photons generated by parametric down conversion, and present a high quantum efficiency ( ∼ 47%) detection of two photons with good time resolution ( ∼ 2 ns), which can be distinguished from a single-photon incidence with a small bit-error rate ( ∼ 0.63%). © 1999 American Institute of Physics.
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07.60.Dq Photometers, radiometers, and colorimeters
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
42.50.Ar Photon statistics and coherence theory

Power rise in broad-waveguide diode laser with inclined facet

Irina A. Kostko, Vadim P. Evtikhiev, Eugeny Yu. Kotelnikov, and Georgy G. Zegrya

Appl. Phys. Lett. 74, 905 (1999); http://dx.doi.org/10.1063/1.123405 (3 pages)

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A method of transverse mode selection in high-power broad-waveguide separate confinement heterostructure quantum-well lasers by placing the front mirror at the angle other than the normal to the radiation propagation direction is proposed. Optimal values of facet inclination angles and widths and the refractive indices of the dielectric coating at which the fundamental guided mode dominates are found. The possibility of increasing the output power 1.2 times of a broad-waveguide separate confinement heterostructure quantum-well diode laser with inclined facet is shown. © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Bh Lenses, prisms and mirrors

On the observation of 2.8 μm emission from diode-pumped Er3+- and Yb3+-doped low silica calcium aluminate glasses

D. F. de Sousa, L. F. C. Zonetti, M. J. V. Bell, J. A. Sampaio, L. A. O. Nunes, M. L. Baesso, A. C. Bento, and L. C. M. Miranda

Appl. Phys. Lett. 74, 908 (1999); http://dx.doi.org/10.1063/1.123406 (3 pages) | Cited 30 times

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In this letter, we investigate the midinfrared photoluminescence of a series of diode-pumped Er3+-doped and Er3+, Yb3+-codoped low-silica content aluminosilicate glasses. Emission at 2.8 μm was observed in both single doped and codoped samples. The effect of Yb3+ codoping of the Er3+-doped samples was such that, for example, for a 2 wt % Er3+-doped, the photoluminescence yield at 2.8 μm was found to be roughly three times larger than that of the single 2 wt % Er3+-doped sample. This behavior was attributed to the efficient sensitization of Er3+ by Yb3+ in our oxide based host glasses. The results reported in this letter, together with the outstanding mechanical, chemical, and thermal properties of these glasses, suggest that rare-earth doped calcium aluminate glasses may become an attractive host for the development of solid state lasers operating in the midinfrared. © 1999 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
81.05.Kf Glasses (including metallic glasses)

Optical losses in plasma-etched AlGaAs microresonators using reflection spectroscopy

T. Rivera, J.-P. Debray, J. M. Gérard, B. Legrand, L. Manin-Ferlazzo, and J. L. Oudar

Appl. Phys. Lett. 74, 911 (1999); http://dx.doi.org/10.1063/1.123407 (3 pages) | Cited 27 times

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The optical losses in dry-etched monolithic microresonators have been studied as a function of their lateral dimensions. Cylindrical microresonators with various radii have been etched from a planar GaAlAs/GaAs microcavity with a very high quality factor (Q ≅ 11 700). Measurements of the resonance linewidth, using Ti-sapphire laser spectroscopy allowed to study the degradation of the Q factor at small radii. The Q factor is four times smaller in 1.1 μm radius microresonators, compared to the unprocessed cavity. This degradation is attributed to optical scattering from sidewalls, whose efficiency is shown to scale with the guided mode intensity at the microresonator edge. © 1999 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
81.65.Cf Surface cleaning, etching, patterning
42.79.Wc Optical coatings

Tunable midinfrared source by difference frequency generation in bulk periodically poled KTiOPO4

K. Fradkin, A. Arie, A. Skliar, and G. Rosenman

Appl. Phys. Lett. 74, 914 (1999); http://dx.doi.org/10.1063/1.123408 (3 pages) | Cited 64 times

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We demonstrate quasi-phase-matched difference frequency generation in periodically poled KTiOPO4. A midinfrared (3.2–3.4 μm) idler with a power level of 0.17 μW is generated by mixing a Nd:YAG laser and tunable external cavity laser near 1550 nm which is amplified by an erbium-doped fiber amplifier. The wavelength, temperature, and angle tuning characteristics of this device are determined. The experimental results are used to derive a Sellmeier equation with improved accuracy in the midinfrared range for the extraordinary refractive index of flux-grown KTiOPO4. © 1999 American Institute of Physics.
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42.72.Ai Infrared sources
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Mp Nonlinear optical crystals
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Theoretical modeling of carrier and lattice heating effects for frequency chirping in semiconductor lasers

Chin-Yi Tsai, Chih-Hsiung Chen, Tien-Li Sung, Chin-Yao Tsai, and Judy M. Rorison

Appl. Phys. Lett. 74, 917 (1999); http://dx.doi.org/10.1063/1.123409 (3 pages) | Cited 2 times

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A theoretical model is presented that is capable of simultaneously simulating the frequency response of the photon density, carrier density, electron temperature, hole temperature, populations of nonequilibrium longitudinal optical (LO) and transverse optical (TO) phonons at different wave vectors, and lattice temperature under the modulation of small-signal current. Our results not only provide a more consistent theoretical model for frequency chirping but also illustrate the different roles of carrier and lattice heating in the frequency response of semiconductor lasers. © 1999 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
63.20.K- Phonon interactions
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Unusual picosecond dynamics of a semiconductor vertical-cavity-surface-emitting laser under resonant perturbation

S. G. Hense and M. Wegener

Appl. Phys. Lett. 74, 920 (1999); http://dx.doi.org/10.1063/1.123410 (3 pages) | Cited 2 times

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A stationary electrically pumped semiconductor vertical cavity surface emitting laser held at T = 300 K is perturbed by a femtosecond optical pulse, which is resonant with its cavity mode. For low to moderate intensities, the semiconductor laser reacts with a switch-off. Surprisingly, for yet higher pulse energies, this behavior disappears and a direct recovery of the original emission level is observed. Such behavior cannot be understood within standard or extended rate equations. We speculate that Rabi flops are important under these conditions. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Ultraviolet-light-enhanced luminescence in SiC thin films grown on Si by hot filament chemical vapor deposition and ultraviolet-light-induced luminescence in anodized SiC

J. N. Wang, Z. M. Chen, P. W. Woo, W. K. Ge, Y. Q. Wang, and M. B. Yu

Appl. Phys. Lett. 74, 923 (1999); http://dx.doi.org/10.1063/1.123411 (3 pages) | Cited 12 times

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Intense wide-band photoluminescence (PL) was observed at room temperature from both SiC thin films grown on silicon substrates by hot-filament chemical vapor deposition and anodized SiC thin films formed by electrochemical anodization in HF–ethanol solution. It was found that prolonged irradiation with ultraviolet light from a He–Cd laser (325 nm, 10 mW) generally enhanced the PL intensity of as-grown SiC but induced a new PL band in anodized SiC at room temperature. The light-induced PL emission in anodized SiC was centered at the energy between 2.1 and 2.2 eV in comparison with the initial peak position of about 1.9 eV. These effects were also temperature dependent. © 1999 American Institute of Physics.
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78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments

Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes

J. J. Wierer, D. A. Kellogg, and N. Holonyak

Appl. Phys. Lett. 74, 926 (1999); http://dx.doi.org/10.1063/1.123452 (3 pages) | Cited 27 times

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Vertical-cavity surface-emitting lasers (VCSELs) and resonant-cavity light-emitting diodes (RCLEDs) are demonstrated with high index contrast distributed Bragg reflectors (DBRs) on either side of a λ-thickness cavity (λ ∼ 980 nm). The devices, with tunnel contact junctions making possible lateral electron current excitation, have a lower 6.5 period native-oxide-based AlxOy/GaAs DBR and an upper reflector that is either a 2–4 period AlxOy/GaAs DBR, a 1–2 period SiO2/ZnSe DBR, a λ/4-thickness layer of AlxOy (antireflecting), or no mirror at all. The AlxOy/GaAs DBRs and a buried-oxide-defined current aperture are formed by selective oxidation of the high Al composition AlxGa1−xAs layers. Device characteristics are observed as a function of the upper DBR periodicity (reflectivity). Devices with upper reflectivities of R≳99% operate as VCSELs while those with less reflectivity R≲96% operate as RCLEDs, some with external differential quantum efficiencies as high as η ∼ 27% and narrow spectral emission (Δλ ∼ 50 Å). © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices
42.79.Bh Lenses, prisms and mirrors
81.65.Mq Oxidation
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