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15 Feb 1999

Volume 74, Issue 7, pp. 899-1050

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Exciton absorption in β-FeSi2 epitaxial films

M. Rebien, W. Henrion, U. Müller, and S. Gramlich

Appl. Phys. Lett. 74, 970 (1999); http://dx.doi.org/10.1063/1.123426 (3 pages) | Cited 15 times

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Experimental evidence is given for excitonic transitions in semiconducting iron disilicide. Epitaxial films of β-FeSi2 on Si(100) were studied by optical transmission and reflection measurements at 10 K and at room temperature as well as room temperature spectral ellipsometry. Two sharp peaks were found in the low temperature spectra, which can be ascribed to the ground state and the first excited state of excitons. Assuming free Wannier–Mott excitons, a value of 16 meV is obtained for the binding energy. A value of 0.93 eV for the ionization energy results with this assumption. This coincides with the value of the direct energy gap determined at 10 K. Compared to room temperature the energy gap is blue shifted by 40 meV. © 1999 American Institute of Physics.
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78.66.Li Other semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.30.Hv Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds

Charge depletion of n+-In0.53Ga0.47As potential wells by background acceptor doping

E. Skuras, A. R. Long, B. Vögele, M. C. Holland, C. R. Stanley, E. A. Johnson, and A. MacKinnon

Appl. Phys. Lett. 74, 973 (1999); http://dx.doi.org/10.1063/1.123427 (3 pages) | Cited 1 time

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Charge depletion from 20 monolayers of n+-In0.53Ga0.47As, uniformly doped with Si donors and embedded within Be-doped In0.53Ga0.47As, has been studied at 1.2 K by magnetotransport measurements. Electron subband energies and densities associated with the n+-In0.53Ga0.47As potential well prove sensitive to the presence of the acceptors at concentrations up to 3×1016 cm−3. Agreement between the experimental data and the electronic subband structure calculated self-consistently by solving the one-dimensional Schrödinger and Poisson equations is excellent. The results suggest that intentional background acceptor doping could be a useful mechanism for tuning subband fillings and energies in potential wells formed by highly confined donors. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.20.Nr Semiconductor compounds
61.72.uj III-V and II-VI semiconductors

Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors

X. G. Xu, J. Hu, S. P. Watkins, N. Matine, M. W. Dvorak, and C. R. Bolognesi

Appl. Phys. Lett. 74, 976 (1999); http://dx.doi.org/10.1063/1.123428 (3 pages) | Cited 12 times

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We report the growth and characterization of high-quality InP/GaAs0.5Sb0.5/InP heterostructures and their application to double-heterojunction bipolar transistors (DHBT). The GaAs0.5Sb0.5 layer quality was evaluated by high-resolution x-ray diffraction (XRD), low-temperature photoluminescence (PL), and atomic force microscopy (AFM). The observed 4.2 K PL linewidth was 7.7 meV and XRD rocking curves matched those of dynamical scattering simulations. In contrast to previously reported InP/GaAs0.5Sb0.5/InP DHBTs, the present devices show nearly ideal base and collector currents, low turn-on and collector offset voltages, and a high current gain. Self-aligned DHBTs exhibit a cutoff frequency over 75 GHz and common-emitter current gain greater than 100 at 300 K. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
85.30.Pq Bipolar transistors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.40.Sz Deposition technology
73.61.Ey III-V semiconductors

Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation

H. Wirth, D. Panknin, W. Skorupa, and E. Niemann

Appl. Phys. Lett. 74, 979 (1999); http://dx.doi.org/10.1063/1.123429 (3 pages) | Cited 24 times

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Flash-lamp annealing was used for activation and crystal recovery of highly aluminum-implanted 6H-SiC wafers. In comparison with conventional furnace annealing, the free hole concentration can be remarkably increased at high acceptor atom concentrations ( ≥ 5×1020 cm−3). The lowest resistivity measured at room temperature was 0.01 Ω cm. In this case, the layers are characterized by metallic conduction with weak dependence of the hole concentration on the temperature. This effect is caused by freezing-in of the enhanced solubility of aluminum in SiC at the extraordinary high temperature of about 2000 °C during the light-flash. © 1999 American Institute of Physics.
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61.82.Fk Semiconductors
61.72.up Other materials
72.80.Jc Other crystalline inorganic semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
72.20.Fr Low-field transport and mobility; piezoresistance

Onset of blistering in hydrogen-implanted silicon

L.-J. Huang, Q.-Y. Tong, Y.-L. Chao, T.-H. Lee, T. Martini, and U. Gösele

Appl. Phys. Lett. 74, 982 (1999); http://dx.doi.org/10.1063/1.123430 (3 pages) | Cited 24 times

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The onset of surface blistering in hydrogen-implanted single crystalline silicon was studied. A combination of atomic force microscopy and optical measurements shows that hydrogen-containing platelets grow laterally below silicon surface until they suddenly pop up as surface blisters due to the internal hydrogen pressure after a critical size has been reached. Experimentally and theoretically, the critical size of the onset blisters was found to increase with increasing implantation depth or top layer thickness. © 1999 American Institute of Physics.
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61.72.uf Ge and Si
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Cc Kinetics of defect formation and annealing

Influence of 6H–SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers

V. M. Torres, J. L. Edwards, B. J. Wilkens, David J. Smith, R. B. Doak, and I. S. T. Tsong

Appl. Phys. Lett. 74, 985 (1999); http://dx.doi.org/10.1063/1.123431 (3 pages) | Cited 19 times

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Epitaxial AlN films were grown on 6H–SiC(0001) substrates using an ammonia supersonic seeded beam. The films grown on substrates etched in hydrogen at high temperatures were shown by ion beam channeling to exhibit a higher degree of order relative to those grown on the as-received substrates. Cross-sectional electron microscopy revealed sharper SiC–AlN interfaces with extended flat terraces. In particular, very few stacking mismatch boundaries were observed to originate from the 1.5 nm steps which correspond to the 6H stacking sequence of the substrate. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Determination of EL2 capture and emission coefficients in semi-insulating n-GaAs

L. L. Bonilla, P. J. Hernando, M. Kindelan, and F. Piazza

Appl. Phys. Lett. 74, 988 (1999); http://dx.doi.org/10.1063/1.123432 (3 pages) | Cited 8 times

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We have determined the capture and emission coefficients by EL2 traps in semi-insulating n-GaAs using available experimental results. To this end, we have derived a simplified mathematical model from the complete drift–diffusion equations by singular perturbation methods. The capture and emission coefficients are adjusted so that the numerically obtained steady-state and high-field charge dipole solutions of the simplified model match the available experimental results. © 1999 American Institute of Physics.
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71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects

Low interface trap density in rapid thermally annealed Al/SiNx:H/InP metal–insulator–semiconductor devices

E. Redondo, N. Blanco, I. Mártil, and G. Gonzalez-Díaz

Appl. Phys. Lett. 74, 991 (1999); http://dx.doi.org/10.1063/1.123433 (3 pages) | Cited 8 times

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A minimum interface trap density of 1012 eV−1 cm−2 was obtained on SiNx:H/InP metal–insulator–semiconductor structures without InP surface passivation. The SiNx:H gate insulator was obtained by the electron cyclotron resonance plasma method. This insulator was deposited in a single vacuum run and was composed of two layers with different nitrogen-to-silicon ratios. The first layer deposited onto the InP was grown with a nitrogen-to-silicon ratio of N/Si=1.55, whereas the second one was grown with a N/Si ratio of N/Si=1.43. After the insulator deposition, rapid thermal annealing of the devices was performed at a constant annealing time of 30 s. The interface trap density minimum value was obtained at an optimum annealing temperature of 500 °C. Higher annealing temperatures promote thermal degradation of the interface and a sharp increase in the trap density. © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing
73.20.-r Electron states at surfaces and interfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

In situ scanning tunneling microscopy study of C-induced Ge quantum dot formation on Si(100)

O. Leifeld, E. Müller, D. Grützmacher, B. Müller, and K. Kern

Appl. Phys. Lett. 74, 994 (1999); http://dx.doi.org/10.1063/1.123434 (3 pages) | Cited 26 times

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Deposition of submonolayer coverages of C on Si(100) prior to Ge growth leads to the formation of Ge quantum dots below the critical thickness for Ge islanding on bare Si(100). In situ scanning tunneling microscopy reveals a high density of irregularly shaped islands for Ge coverages from 2.5 to 4 ML. Island sizes are broadly distributed between 10 and 25 nm. Keeping the C coverage constant and increasing the Ge coverage from 2.5 to 4 ML, the islands increase in height but their density remains constant ( ∼ 1011 cm−2). At a Ge coverage of 5.8 ML, formation of larger (105)-faceted islands is observed. Their density is reduced by a factor of 4 compared to smaller Ge coverages. Transmission electron microscopy shows that the nonfaceted islands are preserved after Si capping. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Vacancy defects in solid-phase epitaxial grown layers of self-implanted Si

Jun Xu, E. G. Roth, O. W. Holland, A. P. Mills, and Ryoichi Suzuki

Appl. Phys. Lett. 74, 997 (1999); http://dx.doi.org/10.1063/1.123453 (3 pages) | Cited 17 times

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A method for preparing shallow dopant distributions via solid-phase epitaxial growth (SPEG) following amorphization by low-energy Si self-ion implantation leaves defects that can lead to unwanted dopant impurity diffusion. The double implant method for SPEG [O. W. Holland et al., J. Electron. Mater. 25, 99 (1996)] uses both low- and high-energy Si self-ion implantation to remove most of the interstitials. Nevertheless, we find that measurable crystalline imperfections remain following the SPEG annealing step. Measurements of defect profiles using variable-energy positron spectroscopy show that there are divacancy-impurity complexes in the SPEG layer and V6 and larger vacancy clusters near the SPEG-crystalline interface. These measurements should be useful for modeling the diffusion of dopant atoms and for fine tuning the double implant parameters. © 1999 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Cy Elemental semiconductors
81.15.Np Solid phase epitaxy; growth from solid phases
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.J- Point defects and defect clusters
78.70.Bj Positron annihilation
61.72.Cc Kinetics of defect formation and annealing
61.43.Dq Amorphous semiconductors, metals, and alloys

Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate

A. M. Jones, J. L. Jewell, J. C. Mabon, E. E. Reuter, S. G. Bishop, S. D. Roh, and J. J. Coleman

Appl. Phys. Lett. 74, 1000 (1999); http://dx.doi.org/10.1063/1.123435 (3 pages) | Cited 9 times

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Long-wavelength photoluminescence at 1.35 μm has been measured from an InGaAs quantum-well heterostructure deposited on disk-shaped InGaAs (xIn = 0.05) compliant-film membranes. Strain-induced warping is avoided by utilizing a single pedestal to suspend each compliant-film disk over a GaAs substrate. Cathodoluminescence (CL) spectra verify the long-wavelength emission, and panchromatic CL images reveal that strong emission occurs only on compliant film structures supported by 1-μm-diam pedestals. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Epitaxial growth of a (100) CoSi2 layer from carbonic cobalt films deposited on (100) Si substrate using an organometallic source

Hwa Sung Rhee, Tae Woong Jang, and Byung Tae Ahn

Appl. Phys. Lett. 74, 1003 (1999); http://dx.doi.org/10.1063/1.123436 (3 pages) | Cited 14 times

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We report the epitaxial growth of a (100) CoSi2 layer on Si (100) substrate by the diffusion of Co from an amorphous carbonic cobalt film. The employment of an intermediate buffer layer, usually required between Si and pure Co, was eliminated in this experiment. The amorphous carbonic cobalt film was prepared by the organometallic chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η5–C5H5)(CO)2 at 350 °C. The carbonic cobalt film was capped by a sputtered Ti layer to avoid oxidation of Co during annealing. A CoSi2 layer was epitaxially grown on Si (100) by ex situ rapid thermal annealing at 800 °C in N2 ambient. The supply of Co by diffusion in the carbonic cobalt film seemed to be low enough to form an epitaxial CoSi2 layer. © 1999 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.Nq Composition and phase identification
81.05.Bx Metals, semimetals, and alloys
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing
85.40.Ls Metallization, contacts, interconnects; device isolation

Observation of terahertz radiation from higher-order two-dimensional plasmon modes in GaAs/AlGaAs single quantum wells

N. Sekine, K. Yamanaka, K. Hirakawa, M. Voßebürger, P. Haring-Bolivar, and H. Kurz

Appl. Phys. Lett. 74, 1006 (1999); http://dx.doi.org/10.1063/1.123437 (3 pages) | Cited 11 times

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We have observed terahertz (THz) radiation from higher-order two-dimensional (2D) plasmon modes in GaAs/AlGaAs single quantum wells by time-resolved THz emission spectroscopy. Up to fifth-order plasmon modes are clearly resolved and the observed mode frequencies are in excellent agreement with theory. Relaxation times of the 2D plasmon modes are found to be almost independent of the plasmon wave vector accessible in the present experiment. © 1999 American Institute of Physics.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.70.Gq Microwave and radio-frequency interactions
78.66.Fd III-V semiconductors
84.40.-x Radiowave and microwave (including millimeter wave) technology
78.47.-p Spectroscopy of solid state dynamics

Blockage of the annealing-induced Si/SiO2 degradation by helium

V. V. Afanas’ev and A. Stesmans

Appl. Phys. Lett. 74, 1009 (1999); http://dx.doi.org/10.1063/1.123438 (3 pages) | Cited 2 times

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Electrical degradation of Si/SiO2 structures caused by postoxidation annealing was comparatively studied in noble gas (He, Ne, Ar), vacuum, and N2 ambient. Helium is found to significantly retard the generation of defects responsible for the low-field conductivity of ultrathin oxides and the hole trapping in SiO2. The physical mechanism of the blockage effect is attributed to the occupation of interstitial cavities in SiO2 by the noble gas atoms that prevent interfacial reaction between Si and SiO2. © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.Hb Impurity and defect levels; energy states of adsorbed species

The inverse Meyer–Neldel rule in thin-film transistors with intrinsic heterogeneous silicon

H. Meiling and R. E. I. Schropp

Appl. Phys. Lett. 74, 1012 (1999); http://dx.doi.org/10.1063/1.123439 (3 pages) | Cited 13 times

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The electron transport in undoped heterogeneous silicon deposited by hot-wire chemical vapor deposition is found to exhibit conventional as well as greatly pronounced inverse Meyer–Neldel behavior, when including this type of silicon in a field-effect device. The heterogeneous nature of the semiconductor in the channel region near to the gate insulator allows the Fermi level to be pushed deeply into the conduction-band tail states of the amorphous constituent of the material, which is the transport-limiting phase. By considering the band alignment at the interface of the crystalline inclusions and the amorphous phase, the occurrence of an activation energy smaller than 0.1 eV (required to observe the inverse Meyer–Neldel behavior) can be expected. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.20.Mq Elemental semiconductors
73.61.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
73.20.-r Electron states at surfaces and interfaces
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