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22 Feb 1999

Volume 74, Issue 8, pp. 1057-1183

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High-quality visible-blind AlGaN p-i-n photodiodes

E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sánchez, and M. Razeghi

Appl. Phys. Lett. 74, 1171 (1999); http://dx.doi.org/10.1063/1.123960 (3 pages) | Cited 66 times

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We report the fabrication and characterization of AlxGa1−xN p-i-n photodiodes (0 ⩽ x ⩽ 0.15) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible rejection of six orders of magnitude with a cutoff wavelength that shifts from 365 to 338 nm. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances, the transient response becomes non-exponential, with a decay time longer than the RC constant. This behavior is justified by the strong frequency dependence of the device capacitance. By an admittance analysis, we conclude that speed is not limited by deep levels, but by substitutional Mg capture and emission time. © 1999 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors

Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors

C. Wang, John P. Snyder, and J. R. Tucker

Appl. Phys. Lett. 74, 1174 (1999); http://dx.doi.org/10.1063/1.123477 (3 pages) | Cited 80 times

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PtSi source/drain p-type metal–oxide–semiconductor field-effect transistors (MOSFETs) have been fabricated at sub-40 nm channel lengths with 19 Å gate oxide. These devices employ gate-induced field emission through the PtSi ∼0.2 eV hole barrier to achieve current drives of ∼350 μA/μm at 1.2 V supply. Delay times estimated by the CV/I metric extend scaling trends of conventional p-MOSFETs to ∼2 ps. Thermal emission limits on/off current ratios to ∼20–50 in undoped devices at 300 K, while ratios of ∼ 107 are measured at 77 K. Off-state leakage can be reduced by implanting a thin layer of fully depleted donors beneath the active region to augment the Schottky barrier height or by use of ultrathin silicon-on-insulator substrates. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
85.40.Ls Metallization, contacts, interconnects; device isolation
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
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