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22 Feb 1999

Volume 74, Issue 8, pp. 1057-1183

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Damage threshold of HgCdTe induced by continuous-wave CO2 laser

Jianhua Zhao, Xiangyang Li, Hua Liu, Runqing Jiang, Zhaopeng Liu, Zhihan Hu, Haimei Gong, and Jiaxiong Fang

Appl. Phys. Lett. 74, 1081 (1999); http://dx.doi.org/10.1063/1.123488 (3 pages)

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We studied the interaction of p-type HgCdTe with a continuous-wave (cw) carbon dioxide (CO2) laser experimentally and theoretically and obtained an apparent damage threshold temperature, 670–680 K, which corresponds to the temperature of the solid–solid phase transition of HgCdTe. We proposed a two-dimensional thermal conducting model dealing with the thermal diffusion of cw laser processing of materials in this letter. The temperature distribution during the interaction between HgCdTe and the cw CO2 laser is also presented and discussed. All the theoretical calculations are in good agreement with the experimental results. © 1999 American Institute of Physics.
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61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.62.Cf Industrial applications
64.70.K- Solid-solid transitions
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Epitaxially ideal oxide–semiconductor interfaces: Silicate adlayers on hexagonal (0001) and (000math) SiC surfaces

J. Bernhardt, J. Schardt, U. Starke, and K. Heinz

Appl. Phys. Lett. 74, 1084 (1999); http://dx.doi.org/10.1063/1.123489 (3 pages) | Cited 40 times

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The preparation of hexagonal {0001} 4H and 6H silicon carbide surfaces by hydrogen plasma or etching in hydrogen flow produces highly ordered monolayers of silicon dioxide. Their structure and epitaxial relationship to the SiC substrate were analyzed by quantitative low-energy electron diffraction and Auger electron spectroscopy. The bond angles and distances retrieved agree with those of bulk SiO2. Due to the saturation of all dangling bonds the semiconductor surface is passivated and preserves its perfect order also in air. The practically ideal oxide monolayers may serve as a seed for growing epitaxial oxides with low defect density and only few structural distortions at the interface to the SiC substrate. © 1999 American Institute of Physics.
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68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.35.Ct Interface structure and roughness
81.65.Cf Surface cleaning, etching, patterning
81.65.Mq Oxidation
79.20.Fv Electron impact: Auger emission
81.65.Rv Passivation

Phase separation in a two-dimensional Co–Cr alloy

S.-J. Kahng, Y. J. Choi, J.-Y. Park, and Y. Kuk

Appl. Phys. Lett. 74, 1087 (1999); http://dx.doi.org/10.1063/1.123490 (3 pages) | Cited 9 times

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Two-dimensional phase separation in a Co–Cr random binary alloy on a W(110) surface was confirmed with ultra-high-vacuum scanning tunneling microscopy. With 1.1 ML Co and 0.1 ML Cr co-deposited at room temperature, the film shows a kinetically limited structure. Upon annealing, phase separation between Co and Cr-rich phases of ∼100 Å size was observed. Evidence of compositional inhomogeneity was observed in Cr-rich phases but not in Co-rich phases. © 1999 American Institute of Physics.
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68.55.Nq Composition and phase identification
64.75.-g Phase equilibria
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Cc Other ferromagnetic metals and alloys
81.05.Bx Metals, semimetals, and alloys
81.30.Bx Phase diagrams of metals, alloys, and oxides
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Local electric-field-induced oxidation of titanium nitride films

S. Gwo, C.-L. Yeh, P.-F. Chen, Y.-C. Chou, T. T. Chen, T.-S. Chao, S.-F. Hu, and T.-Y. Huang

Appl. Phys. Lett. 74, 1090 (1999); http://dx.doi.org/10.1063/1.123491 (3 pages) | Cited 30 times

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Nanometer-scale patterning of TiN films grown on SiO2/Si(001) has been demonstrated using the local electric-field-induced oxidation process with a conductive-probe atomic force microscope. The chemical composition of the modified TiN region was determined by micro-Auger electron spectroscopy and was found to consist of Ti, some trace amount of N, and O, suggesting the formation of titanium oxynitride in the near surface region. The dependence of the oxide height on the sample bias voltage with a fixed scanning speed shows a nonlinear trend in the high electric field regime, indicating that the growth kinetics might be significantly different from previous studies using other film materials. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
79.20.Fv Electron impact: Auger emission

Local density of states calculation for a discrete model of a diamond single atom tip

N. M. Miskovsky and Paul H. Cutler

Appl. Phys. Lett. 74, 1093 (1999); http://dx.doi.org/10.1063/1.123492 (3 pages) | Cited 3 times

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Recent studies of field emission from wide-band-gap semiconductors have concentrated on thin-film and needle geometries. It has been proposed that the emission originates from localized asperities (or crystallites) on the film (which can be of nanometer or even atomic size) or from very sharp tips approaching atomic size in the case of needle geometry. A quantity important in determining the origin of the tunneling electron states is the density of states function. In the present work we have calculated the local density of states at an atomically sharp diamond asperity (or tip) using a tight-binding model. A pyramidal-shaped cluster of 159 atoms is constructed to model the tip. The forces are calculated and used to optimize the atomic geometry of the top six layers of atoms. The bottom layers are fixed to simulate the bulk diamond. Results indicate that the local density of states of the topmost single atom on the tip is significantly different from that of the bulk and suggest that the discrete geometry of the structure plays a role in determining the field-emission characteristics. © 1999 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
71.20.Mq Elemental semiconductors
73.20.Fz Weak or Anderson localization
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
36.40.Cg Electronic and magnetic properties of clusters
79.70.+q Field emission, ionization, evaporation, and desorption

Near-field photoluminescence of microcrystalline arsenic oxides produced in anodically processed gallium arsenide

Christine M. Finnie and Paul W. Bohn

Appl. Phys. Lett. 74, 1096 (1999); http://dx.doi.org/10.1063/1.123454 (3 pages) | Cited 8 times

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Anodic processing of (100) GaAs in aqueous HCl results in the formation of a pitted surface hosting arsenic oxide microcrystals within a porous surface network. The composition of the microcrystalline features evolves from As(V) to As(III) with processing time. Spatially localized near-field photoluminescence (PL) spectroscopy of the microcrystalline and porous features demonstrates that the strong visible photoluminescence observed in the far field originates from the μm-sized crystalline features. The spatial localization of the PL on the arsenic oxide microcrystalline features argues that it does not arise from quantum confinement effects, but rather is due to luminescent features intrinsic to the arsenic oxide microcrystals on the pitted surface. © 1999 American Institute of Physics.
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78.55.Mb Porous materials
78.55.Cr III-V semiconductors
81.65.-b Surface treatments
81.05.Rm Porous materials; granular materials
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