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1 Mar 1999

Volume 74, Issue 9, pp. 1191-1347

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Electro-optic sampling near zero optical transmission point

Zhiping Jiang, F. G. Sun, Q. Chen, and X.-C. Zhang

Appl. Phys. Lett. 74, 1191 (1999); http://dx.doi.org/10.1063/1.123495 (3 pages) | Cited 41 times

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Theoretical calculation and experimental demonstration indicate that there is an optimal position near the zero optical bias point in a crossed polarizer electro-optic sampling geometry. At this position, free-space electro-optic sampling with a ZnTe sensor crystal has the largest modulation depth for the detection of a weak (THz) modulated signal on a strong laser background. Electro-optic sampling of THz pulses with a modulation depth of 9% and a signal-to-noise ratio better than 50 000:1 is demonstrated. © 1999 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
78.20.Jq Electro-optical effects
72.80.Ey III-V and II-VI semiconductors

High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm

D. Wu, B. Lane, H. Mohseni, J. Diaz, and M. Razeghi

Appl. Phys. Lett. 74, 1194 (1999); http://dx.doi.org/10.1063/1.123496 (3 pages) | Cited 8 times

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Midinfrared lasers with an asymmetrical InPAsSb/InAsSb/AlAsSb double heterostructure are reported. Using the asymmetrical double heterostructure, p- and n-cladding layers are separately optimized; high energy-gap AlAsSb (Eg ≈ 1.5 eV) for the p-type cladding layer to reduce the leakage current, and thus to increase To, and low energy-gap InPAsSb (Eg ≈ 0.5 eV) for the n-cladding layer to have low turn-on voltage. 100-μm-width broad-area lasers with 1000 μm cavity length exhibited peak output powers of 1.88 W in pulse and 350 mW in continuous wave modes per two facets at T=80 K with To of 54 K and turn-on voltage of 0.36 V. Maximum peak output powers up to 6.7 W were obtained from a laser bar of total aperture of 400 μm width and cavity length of 1000 μm, with a differential efficiency of 34% and far-field beam divergence narrower than 40° at 80 K. © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical modulation in a resonant tunneling relaxation oscillator

J. M. L. Figueiredo, C. R. Stanley, A. R. Boyd, C. N. Ironside, S. G. McMeekin, and A. M. P. Leite

Appl. Phys. Lett. 74, 1197 (1999); http://dx.doi.org/10.1063/1.123497 (3 pages) | Cited 4 times

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We report high-speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide and incorporated in a package with a coplanar waveguide transmission line. When appropriately biased, the RTD can provide wide-bandwidth electrical gain. For wavelengths near the material band edge, small changes of the applied voltage give rise to large, high-speed electroabsorption modulation of the light. We have observed optical modulation at frequencies up to 14 GHz, associated with subharmonic injection locking of the RTD oscillation at the fundamental mode of the coplanar transmission line, as well as generation of 33 ps optical pulses due to relaxation oscillation. © 1999 American Institute of Physics.
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85.60.-q Optoelectronic devices
85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
78.20.Jq Electro-optical effects

Ultrashort laser pulse induced deformation of silver nanoparticles in glass

M. Kaempfe, T. Rainer, K.-J. Berg, G. Seifert, and H. Graener

Appl. Phys. Lett. 74, 1200 (1999); http://dx.doi.org/10.1063/1.123498 (3 pages) | Cited 50 times

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Irradiating intense femtosecond laser pulses on a glass sample containing silver nanoparticles results in permanent sample color changes if the laser wavelength is in the region of the particles’ surface plasmon resonance. In particular, even a single pulse of appropriate intensity can modify the initially isotropic extinction of glass containing spherical particles to a dichroic sample behavior in the irradiated area. This observation is interpreted as ultrafast particle deformation induced by the laser pulse creating nonspherical particles of uniform orientation. © 1999 American Institute of Physics.
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78.20.Fm Birefringence
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
61.46.-w Structure of nanoscale materials
61.82.-d Radiation effects on specific materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector

V. S. Sinnis, M. Seto, G. W. ’t Hooft, Y. Watabe, A. P. Morrison, W. Hoekstra, and W. B. de Boer

Appl. Phys. Lett. 74, 1203 (1999); http://dx.doi.org/10.1063/1.123499 (3 pages) | Cited 2 times

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We report on a silicon-based resonant cavity photodiode with a buried silicon dioxide layer as the bottom reflector. The buried oxide is created by using a separation by implantation of oxygen technique. The device shows large Fabry–Pérot oscillations. Resonant peaks and antiresonant troughs are observed as a function of the wavelength, with a peak responsivity of about 50 mA/W at 650 and 709 nm. The leakage current density is 85 pA/mm2 at −5 V, and the average zero-bias capacitance is 12 pF/mm2. We also demonstrate that the buried oxide prevents carriers generated deep within the substrate from reaching the top contacts, thus removing any slow carrier diffusion tail from the impulse response. © 1999 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Bh Lenses, prisms and mirrors
42.86.+b Optical workshop techniques

A 200 nm×2 mm array of organic light-emitting diodes and their anisotropic electroluminescence

Naotoshi Suganuma, Chihaya Adachi, Toshiki Koyama, Yoshio Taniguchi, and Hiroshi Shiraishi

Appl. Phys. Lett. 74, 1206 (1999); http://dx.doi.org/10.1063/1.123500 (3 pages) | Cited 8 times

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We demonstrated the fabrication of a 200 nm×2 mm array of organic light-emitting diodes (OLEDs) on a glass substrate. The photolithographic technique using an optical phase shift mask allowed us to construct a super-fine resolution patterning of OLEDs. A single organic electroluminescent (EL) layer composed of an inert poly(methylmethacrylate) polymer binder and tetraphenylbendidine and tris(8-quinolinol) aluminum molecules was fabricated on a fine-resolution photoresist patterning by a spin coating method. The lines and spaces of the photoresist patterning were 200 nm. The emitting area was well confined by the regular array of residual photoresist resin walls. Finally, a MgAg cathode layer was uniformly deposited on the organic layer. We observed anisotropic EL spectra between the directions perpendicular and parallel to the patterning of OLED arrays. Furthermore, we observed a large difference of EL intensities between them. We assume that the anisotropic EL characteristics are caused by the confinement effect of photons inside the submicrometer-sized OLED array. © 1999 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering

E. Dogheche, D. Rémiens, A. Boudrioua, and J. C. Loulergue

Appl. Phys. Lett. 74, 1209 (1999); http://dx.doi.org/10.1063/1.123501 (3 pages) | Cited 14 times

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Highly textured hexagonal aluminum nitride (AlN) thin films were deposited on silicon substrates by radio-frequency magnetron sputtering at a substrate temperature below 400 °C and annealed in the temperature range of 400–450 °C by rapid thermal annealing. The optical and the electro-optical properties have been investigated using the prism-coupling technique. Both ordinary and extraordinary refractive indices (n0 = 2.0058 and ne = 2.0374 at 632.8 nm) were respectively determined from the transverse electric and the transverse magnetic mode excitations. Furthermore, refractive index profiles analysis by using an improved inverse Wentzel–Kramer–Brillouin method reveals a step-like behavior of AlN thin films. The optical losses have been evaluated to be around 7 dB cm−1. The electro-optic coefficient r13 of 0.98 pm/V has been measured from the variation of the shift of guided-modes spectrum as a function of the applied electric field in the experiment. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
78.20.Jq Electro-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Fm Birefringence
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.15.Cd Deposition by sputtering

Self-collimating phenomena in photonic crystals

Hideo Kosaka, Takayuki Kawashima, Akihisa Tomita, Masaya Notomi, Toshiaki Tamamura, Takashi Sato, and Shojiro Kawakami

Appl. Phys. Lett. 74, 1212 (1999); http://dx.doi.org/10.1063/1.123502 (3 pages) | Cited 275 times

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We found that self-determining collimated light is generated in a photonic crystal fabricated on silicon. The divergence of the collimated beam is insensitive to that of the incident beam and much smaller than the divergence that would be generated in conventional Gaussian optics. The incident-angle dependence of the self-collimated light propagation including lens-like divergent propagation was interpreted in terms of the highly modulated dispersion surfaces with inflection points, where the curvature changes from downward to upward corresponding to respectively a concave/convex-lens case. This demonstration is an important step towards controlling beam profile in photonic crystal integrated light circuits and towards developing “photonic crystalline optics.” © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.50.-p Quantum optics
42.79.Ag Apertures, collimators
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.82.-m Integrated optics
42.25.Bs Wave propagation, transmission and absorption

Spatial hole burning and multimode generation threshold in quantum-dot lasers

L. V. Asryan and R. A. Suris

Appl. Phys. Lett. 74, 1215 (1999); http://dx.doi.org/10.1063/1.123503 (3 pages) | Cited 10 times

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The multimode generation threshold in quantum-dot (QD) lasers is calculated as a function of the parameters of structure and temperature. Thermally excited escapes of carriers away from QDs are shown to control the multimode generation threshold. A decrease in the QD size dispersion is shown to increase considerably the relative multimode generation threshold. The maximum tolerable QD size dispersion and the minimum tolerable cavity length, at which the lasing is possible to attain, are shown to exist. Concurrent with the decrease of threshold current, the reduction of multimode generation threshold is shown to occur with decrease of temperature. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Electron paramagnetic resonance of a cation antisite defect in ZnGeP2

S. D. Setzler, N. C. Giles, L. E. Halliburton, P. G. Schunemann, and T. M. Pollak

Appl. Phys. Lett. 74, 1218 (1999); http://dx.doi.org/10.1063/1.123504 (3 pages) | Cited 20 times

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Electron paramagnetic resonance (EPR) has been used to characterize a new donor center in ZnGeP2 crystals. An equally spaced triplet of lines with a 1:2:1 intensity ratio is observed at g = 2.0026 when a crystal is exposed to 633 nm light (below band gap) while at temperatures below 50 K. These EPR lines are approximately 70 G wide and they exhibit only a slight angular dependence (their separation changes from 189 to 179 G as the magnetic field is rotated from the c axis to the a axis). The proposed model for the new donor is a germanium ion on a zinc site. This antisite center is paramagnetic (S = 1/2) in the singly ionized state (i.e., GeZn+) and the triplet nature of its EPR spectrum is attributed to nearly equal strong hyperfine interactions with two of the nearest-neighbor phosphorus ions. © 1999 American Institute of Physics.
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76.30.Mi Color centers and other defects
71.55.Ht Other nonmetals
61.72.J- Point defects and defect clusters
71.70.Jp Nuclear states and interactions
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Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method

G. D. Hu, I. H. Wilson, J. B. Xu, W. Y. Cheung, S. P. Wong, and H. K. Wong

Appl. Phys. Lett. 74, 1221 (1999); http://dx.doi.org/10.1063/1.123505 (3 pages) | Cited 33 times

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SrBi2Ta2O9 (SBT) ferroelectric thin films were prepared by metalorganic decomposition on Pt/Ti/SiO2/Si substrates at annealing temperatures ranging from 600 to 750 °C. The SBT thin films were annealed layer by layer during the spin-coating process using a rapid thermal annealing (RTA) furnace. The relative intensity of (200) peak in x-ray diffraction increased with the increase of the annealing temperature. A (200)-predominant film can be formed at 700 and 750 °C. For the film annealed by RTA furnace at 650 °C, the remanent polarization (2Pr) and coercive field (2Ec) were 19.8 μC/cm2 and 116 kV/cm, respectively. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing
77.22.Ej Polarization and depolarization

Shape transition of InAs quantum dots by growth at high temperature

Hideaki Saito, Kenichi Nishi, and Shigeo Sugou

Appl. Phys. Lett. 74, 1224 (1999); http://dx.doi.org/10.1063/1.123506 (3 pages) | Cited 84 times

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The shape of InAs quantum dots grown on GaAs substrates by molecular beam epitaxy is investigated at various growth temperatures. A dot with a new shape surrounded by {110} facets and having a high aspect ratio appears at temperatures over 510 °C. This dot is transformed from a pyramid shape (low aspect ratio) when its volume exceeds a critical value by raising the growth temperature. The shape transition indicates that the high-aspect-ratio dot is energetically favorable at a large volume. A narrow energy width of photoluminescence, 35 meV at room temperature, is obtained by the growth of the high-aspect-ratio dots, which have a fairly good size uniformity of less than 4% deviation. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Optical properties of GaN pyramids

K. C. Zeng, J. Y. Lin, H. X. Jiang, and Wei Yang

Appl. Phys. Lett. 74, 1227 (1999); http://dx.doi.org/10.1063/1.123507 (3 pages) | Cited 21 times

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Picosecond time-resolved photoluminescence (PL) spectroscopy has been used to investigate the optical properties of GaN pyramids overgrown on hexagonal-patterned GaN(0001) epilayers on sapphire and silicon substrates with AlN buffer layers. We found that: (i) the release of the biaxial compressive strain in GaN pyramids on GaN/AlN/sapphire substrate led to a 7 meV redshift of the spectral peak position with respect to the strained GaN epilayer grown under identical conditions; (ii) in the GaN pyramids on GaN/AlN/sapphire substrate, strong band edge transitions with much narrower linewidths than those in the GaN epilayer have been observed, indicating the improved crystalline quality of the overgrown pyramids; (iii) PL spectra taken from different parts of the pyramids revealed that the top of the pyramid had the highest crystalline quality; and (iv) the presence of strong band-to-impurity transitions in the pyramids were primarily due to the incorporation of the oxygen and silicon impurities from the SiO2 mask. © 1999 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
68.55.-a Thin film structure and morphology

The effects of misfit dislocation distribution and capping layer on excess stress

Zhi Jin, Shuren Yang, Benzhong Wang, Haiyan An, Chunsheng Ma, and Shiyong Liu

Appl. Phys. Lett. 74, 1230 (1999); http://dx.doi.org/10.1063/1.123508 (3 pages)

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It is generally accepted that in the buried strained-layer structure, the strain is relaxed by paired misfit dislocations: one at the upper interface and the other at the lower interface. But, experimentally it is not so. In this letter, the effect of a mixture of single and paired misfit dislocations is incorporated in the formula of excess force. In this formula, the effects of the capping layer with arbitrary thickness and the interaction of misfit dislocations at different interfaces are also included. Based on the formula, the excess stresses are derived. These formulas can be used to predict the excess stress of strained layers with arbitrary heterostructure structures. They also can describe the transition process from the single-kink to the double-kink mechanism. © 1999 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.60.Bs Mechanical and acoustical properties
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Variable energy blast modeling of the stress generation associated with laser ablation

S. Siano, R. Pini, and R. Salimbeni

Appl. Phys. Lett. 74, 1233 (1999); http://dx.doi.org/10.1063/1.123509 (3 pages) | Cited 5 times

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Stress generation induced by laser ablation was modeled by adapting the variable energy blast theory in the condition of laser–target interaction in air that allowed us to obtain the scaling law of the peak and the temporal profile of the pressure pulse. Measurements of the acoustic transient propagating inside the bulk during excimer laser ablation of polyimide, performed by means of polyvinyldenefloride piezoelectric sensors, were successfully compared with the behaviors provided by the theoretical model. © 1999 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
62.50.-p High-pressure effects in solids and liquids
43.25.Cb Macrosonic propagation, finite amplitude sound; shock waves
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect

Artificial skin to sense mechanical stress by visible light emission

C. N. Xu, T. Watanabe, M. Akiyama, and X. G. Zheng

Appl. Phys. Lett. 74, 1236 (1999); http://dx.doi.org/10.1063/1.123510 (3 pages) | Cited 70 times

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The idea and successful practice of a stress sensor to sense mechanical stress by an artificial skin, i.e., self-diagnosis thin film, has been realized, through the fabrication of a high-luminescence thin piezoelectric film which can reproducibly emit strong visible light upon stressing. The strongest luminescent film consists of nanosized crystallites of ZnS doped with 1.5 at. % Mn, in which Mn acts as the emitting center. The intensity of the emitted luminescence responds to stress applied directly onto the film or to the underlying material reversibly and reproducibly, so it can be used as an artificial skin to sense mechanical stress. © 1999 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Pz Instruments for strain, force, and torque
78.66.Hf II-VI semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.60.-b Other luminescence and radiative recombination
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
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Photoconductivity investigation of the electron dynamics in GaAs grown at low temperature

Max Stellmacher, Jean-Phillipe Schnell, Didier Adam, and Julien Nagle

Appl. Phys. Lett. 74, 1239 (1999); http://dx.doi.org/10.1063/1.123511 (3 pages) | Cited 13 times

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We present detailed measurements of photoconductivity as functions of illumination power and temperature on metal–semiconductor–metal photodetectors made of low-temperature GaAs grown at different temperatures (225–350 °C). The extracted carrier lifetimes show the expected dependence as a function of growth temperature. Additionally, our experiments show an order-of-magnitude variation of the extracted lifetimes as functions of measurement temperature and illumination intensity. We propose a simple model based on the one-center-Shockley Read-recombination equation which gives good qualitative agreement over the whole range of temperature (20–120 °C) and illumination power (2×10−4 to 20 W/cm2). We show that the recombination properties are determined by the exact position of the electronic quasi-Fermi level in the partially filled midgap donor band, which is strongly influenced by the acceptor concentration.© 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures
73.50.Dn Low-field transport and mobility; piezoresistance
81.05.Ea III-V semiconductors

Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer

A. Strittmatter, A. Krost, M. Straßburg, V. Türck, D. Bimberg, J. Bläsing, and J. Christen

Appl. Phys. Lett. 74, 1242 (1999); http://dx.doi.org/10.1063/1.123512 (3 pages) | Cited 36 times

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We have investigated the growth of GaN on silicon by low-pressure metal organic chemical vapor deposition. Good quality GaN layers are grown on silicon(111) using an AlAs nucleation layer. AlAs is thermally stable even at 1050 °C and, unlike GaN and AlN buffer layers, the formation of SiNx on the Si surface is prevented. Single crystalline GaN films are obtained by introducing a thin low-temperature GaN buffer layer grown on the AlAs nucleation layer. The GaN layers are characterized by x-ray diffraction, atomic force microscopy, secondary ion mass spectroscopy, photoluminescence, and cathodoluminescence. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures

B. M. M. McGregor, R. J. P. Lander, P. J. Phillips, E. H. C. Parker, and T. E. Whall

Appl. Phys. Lett. 74, 1245 (1999); http://dx.doi.org/10.1063/1.123513 (3 pages) | Cited 4 times

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Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacitance–voltage measurements on metal-oxide-semiconductor (MOS)-gated enhancement mode structures have been used to deduce Hall scattering factors, rH, in the Si1−xGex two-dimensional hole gas. At 300 K, rH was found to be equal to 0.4 for x = 0.2 and x = 0.3. Knowing rH, it is possible to calculate the 300 K drift mobilities in the modulation-doped structures which are found to be 400 cm2 V−1 s−1 at a carrier density of 3.3×1011 cm−2 for x = 0.2 and 300 cm2 V−1 s−1 at 6.3×1011 cm−2 for x = 0.3, factors of between 1.5 and 2.0 greater than a Si pMOS control. © 1999 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.My Galvanomagnetic and other magnetotransport effects

Comparison of ultralow-energy ion implantation of boron and BF2 for ultrashallow p+/n junction formation

Jihwan Park, Yun-Jun Huh, and Hyunsang Hwang

Appl. Phys. Lett. 74, 1248 (1999); http://dx.doi.org/10.1063/1.123514 (3 pages) | Cited 15 times

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We have compared the electrical characteristics and the depth profile of ultrashallow junctions formed by boron implantation at 0.5 keV and BF2 implantation at 2.2 keV. The modeling of the boron profile was performed using the Monte Carlo method for an as-implanted profile and the computationally efficient method for transient-enhanced diffusion. A junction depth of BF2 is shallower than that of boron after annealing. For an ultrashallow junction, HF dipping prior to rapid thermal annealing causes a significant loss of dopant and high sheet resistance. Considering the 0.1 μm metal–oxide–semiconductor field-effect transistor application, the optimizations of implantation and annealing conditions are necessary to satisfy the requirement of junction depth and sheet resistance. © 1999 American Institute of Physics.
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61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.Cc Kinetics of defect formation and annealing
85.30.Tv Field effect devices
61.72.S- Impurities in crystals
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Ct Interface structure and roughness

Spin injection into semiconductors

M. Oestreich, J. Hübner, D. Hägele, P. J. Klar, W. Heimbrodt, W. W. Rühle, D. E. Ashenford, and B. Lunn

Appl. Phys. Lett. 74, 1251 (1999); http://dx.doi.org/10.1063/1.123515 (3 pages) | Cited 113 times

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The injection of spin-polarized electrons is presently one of the major challenges in semiconductor spin electronics. We propose and demonstrate a most efficient spin injection using diluted magnetic semiconductors as spin aligners. Time-resolved photoluminescence with a Cd0.98Mn0.02Te/CdTe structure proves the feasibility of the spin-alignment mechanism. © 1999 American Institute of Physics.
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78.55.Et II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.66.Hf II-VI semiconductors

Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements

Katsuhiro Uesugi, Nobuki Morooka, and Ikuo Suemune

Appl. Phys. Lett. 74, 1254 (1999); http://dx.doi.org/10.1063/1.123516 (3 pages) | Cited 116 times

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GaNAs films grown on GaAs(001) substrates by metalorganic molecular beam epitaxy were studied by high-resolution x-ray diffraction (XRD) mapping measurements. The lattice constants of epitaxial films are usually estimated from symmetric and asymmetric XRD 2θ−θ measurements. In this study, it is pointed out that the consideration of the tilt angle between the GaAs(115) and GaNAs(115) planes caused by elastic deformation of the films is crucial to determine the lattice constants of the GaNAs films coherently grown on GaAs substrates. Mapping measurements of (115) XRD (2θ−θ)−Δω were performed for this purpose. The band gap energy of the films was determined by Fourier transform absorption spectroscopy measurements. The band gap energy bowing measured up to the N composition of 4.5% will be discussed by comparing with other measurements and theoretical calculations. © 1999 American Institute of Physics.
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71.20.Nr Semiconductor compounds
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Thermal evolution of impurities in wet chemical silicon oxides

A. B. Gurevich, M. K. Weldon, Y. J. Chabal, R. L. Opila, and J. Sapjeta

Appl. Phys. Lett. 74, 1257 (1999); http://dx.doi.org/10.1063/1.123517 (3 pages) | Cited 11 times

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We have used infrared absorption spectroscopy and x-ray photoelectron spectroscopy to study the thermal evolution (under ultrahigh vacuum conditions) of ultrathin silicon oxide films grown in acid solutions (HCl, HNO3, and H2SO4). We find that adsorbed hydrocarbon contaminants dissociate and become chemically incorporated into the thin oxide as additional silicon oxide, carbide, hydride, and hydroxyl species. These species significantly influence the thermal evolution of the oxide films and persist up to the SiO desorption temperature (850–1000 °C) so that, once formed, these defects will be necessarily present in the final device structure. © 1999 American Institute of Physics.
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78.30.Hv Other nonmetallic inorganics
78.66.Nk Insulators
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
79.60.Dp Adsorbed layers and thin films

Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy

V. M. Donnelly, F. P. Klemens, T. W. Sorsch, G. L. Timp, and F. H. Baumann

Appl. Phys. Lett. 74, 1260 (1999); http://dx.doi.org/10.1063/1.123518 (3 pages) | Cited 19 times

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Thin SiO2 layers were exposed to an HBr/O2 plasma for a variety of short periods, reproducing the over-etching process after polycrystalline Si gate electrodes have been etched and the gate oxide layer is exposed. Samples were transferred under vacuum to an x-ray photoelectron spectrometer for analysis. After relatively thick (>60 Å) films were exposed to a 10% O2/HBr plasma at an average ion energy of ∼ 150 eV, the near-surface region becomes brominated, and the thickness of the film decreases, indicating an etching rate of ∼ 1–2 Å/s. When the starting film thickness is between 10 and 20 Å, however, exposure to the plasma results in an increases in the thickness of the film, and is enhanced with the increasing addition of oxygen to the feed gas. At mean ion energies of 40 or 150 eV, the transition from etching to deposition occurs at oxygen additions of ∼ 1% or ∼ 8%, respectively. The increase in SiO2 thickness is ascribed mainly to oxidation of the Si at the oxide-substrate interface, and not to deposition resulting from sputtering of reactor materials. Consumption of crystalline Si beneath a 12 Å thick SiO2 gate oxide, adjacent to a 600 Å linewidth, polycrystalline gate electrode was also observed after etching of this transistor structure, as confirmed by transmission electron microscopy. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
79.60.Jv Interfaces; heterostructures; nanostructures

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

C. R. Cho, N. Yarykin, R. A. Brown, O. Kononchuk, G. A. Rozgonyi, and R. A. Zuhr

Appl. Phys. Lett. 74, 1263 (1999); http://dx.doi.org/10.1063/1.123519 (3 pages) | Cited 3 times

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In situ deep-level transient spectroscopy measurements have been carried out on p-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K. In addition to divacancies, interstitial carbon, and a carbon–oxygen complex, the formation of another defect, denoted as K2, has been observed during annealing at 200–230 K in epitaxial wafers, and at 200–300 K in Czochralski grown material. The energy level of the K2 defect is located 0.36 eV above the valence band, which is very close to a previously observed level of the carbon–oxygen pair. The relative concentration of this defect is ∼ 10 times higher in samples implanted with Ge than in those implanted with He. Due to its formation temperature, equal concentration in epitaxial and Czochralski grown wafers, and absence in n-type samples, the K2 trap has been tentatively identified as a vacancy-related complex which probably contains boron. © 1999 American Institute of Physics.
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71.55.Cn Elemental semiconductors
73.61.Cw Elemental semiconductors
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
61.72.Yx Interaction between different crystal defects; gettering effect
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