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1 Mar 1999

Volume 74, Issue 9, pp. 1191-1347

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Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method

G. D. Hu, I. H. Wilson, J. B. Xu, W. Y. Cheung, S. P. Wong, and H. K. Wong

Appl. Phys. Lett. 74, 1221 (1999); http://dx.doi.org/10.1063/1.123505 (3 pages) | Cited 33 times

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SrBi2Ta2O9 (SBT) ferroelectric thin films were prepared by metalorganic decomposition on Pt/Ti/SiO2/Si substrates at annealing temperatures ranging from 600 to 750 °C. The SBT thin films were annealed layer by layer during the spin-coating process using a rapid thermal annealing (RTA) furnace. The relative intensity of (200) peak in x-ray diffraction increased with the increase of the annealing temperature. A (200)-predominant film can be formed at 700 and 750 °C. For the film annealed by RTA furnace at 650 °C, the remanent polarization (2Pr) and coercive field (2Ec) were 19.8 μC/cm2 and 116 kV/cm, respectively. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing
77.22.Ej Polarization and depolarization

Shape transition of InAs quantum dots by growth at high temperature

Hideaki Saito, Kenichi Nishi, and Shigeo Sugou

Appl. Phys. Lett. 74, 1224 (1999); http://dx.doi.org/10.1063/1.123506 (3 pages) | Cited 84 times

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The shape of InAs quantum dots grown on GaAs substrates by molecular beam epitaxy is investigated at various growth temperatures. A dot with a new shape surrounded by {110} facets and having a high aspect ratio appears at temperatures over 510 °C. This dot is transformed from a pyramid shape (low aspect ratio) when its volume exceeds a critical value by raising the growth temperature. The shape transition indicates that the high-aspect-ratio dot is energetically favorable at a large volume. A narrow energy width of photoluminescence, 35 meV at room temperature, is obtained by the growth of the high-aspect-ratio dots, which have a fairly good size uniformity of less than 4% deviation. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Optical properties of GaN pyramids

K. C. Zeng, J. Y. Lin, H. X. Jiang, and Wei Yang

Appl. Phys. Lett. 74, 1227 (1999); http://dx.doi.org/10.1063/1.123507 (3 pages) | Cited 21 times

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Picosecond time-resolved photoluminescence (PL) spectroscopy has been used to investigate the optical properties of GaN pyramids overgrown on hexagonal-patterned GaN(0001) epilayers on sapphire and silicon substrates with AlN buffer layers. We found that: (i) the release of the biaxial compressive strain in GaN pyramids on GaN/AlN/sapphire substrate led to a 7 meV redshift of the spectral peak position with respect to the strained GaN epilayer grown under identical conditions; (ii) in the GaN pyramids on GaN/AlN/sapphire substrate, strong band edge transitions with much narrower linewidths than those in the GaN epilayer have been observed, indicating the improved crystalline quality of the overgrown pyramids; (iii) PL spectra taken from different parts of the pyramids revealed that the top of the pyramid had the highest crystalline quality; and (iv) the presence of strong band-to-impurity transitions in the pyramids were primarily due to the incorporation of the oxygen and silicon impurities from the SiO2 mask. © 1999 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
68.55.-a Thin film structure and morphology

The effects of misfit dislocation distribution and capping layer on excess stress

Zhi Jin, Shuren Yang, Benzhong Wang, Haiyan An, Chunsheng Ma, and Shiyong Liu

Appl. Phys. Lett. 74, 1230 (1999); http://dx.doi.org/10.1063/1.123508 (3 pages)

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It is generally accepted that in the buried strained-layer structure, the strain is relaxed by paired misfit dislocations: one at the upper interface and the other at the lower interface. But, experimentally it is not so. In this letter, the effect of a mixture of single and paired misfit dislocations is incorporated in the formula of excess force. In this formula, the effects of the capping layer with arbitrary thickness and the interaction of misfit dislocations at different interfaces are also included. Based on the formula, the excess stresses are derived. These formulas can be used to predict the excess stress of strained layers with arbitrary heterostructure structures. They also can describe the transition process from the single-kink to the double-kink mechanism. © 1999 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.60.Bs Mechanical and acoustical properties
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Variable energy blast modeling of the stress generation associated with laser ablation

S. Siano, R. Pini, and R. Salimbeni

Appl. Phys. Lett. 74, 1233 (1999); http://dx.doi.org/10.1063/1.123509 (3 pages) | Cited 5 times

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Stress generation induced by laser ablation was modeled by adapting the variable energy blast theory in the condition of laser–target interaction in air that allowed us to obtain the scaling law of the peak and the temporal profile of the pressure pulse. Measurements of the acoustic transient propagating inside the bulk during excimer laser ablation of polyimide, performed by means of polyvinyldenefloride piezoelectric sensors, were successfully compared with the behaviors provided by the theoretical model. © 1999 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
62.50.-p High-pressure effects in solids and liquids
43.25.Cb Macrosonic propagation, finite amplitude sound; shock waves
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect

Artificial skin to sense mechanical stress by visible light emission

C. N. Xu, T. Watanabe, M. Akiyama, and X. G. Zheng

Appl. Phys. Lett. 74, 1236 (1999); http://dx.doi.org/10.1063/1.123510 (3 pages) | Cited 70 times

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The idea and successful practice of a stress sensor to sense mechanical stress by an artificial skin, i.e., self-diagnosis thin film, has been realized, through the fabrication of a high-luminescence thin piezoelectric film which can reproducibly emit strong visible light upon stressing. The strongest luminescent film consists of nanosized crystallites of ZnS doped with 1.5 at. % Mn, in which Mn acts as the emitting center. The intensity of the emitted luminescence responds to stress applied directly onto the film or to the underlying material reversibly and reproducibly, so it can be used as an artificial skin to sense mechanical stress. © 1999 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Pz Instruments for strain, force, and torque
78.66.Hf II-VI semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.60.-b Other luminescence and radiative recombination
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
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