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5 Jul 1999

Volume 75, Issue 1, pp. 1-147

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1.55 μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect

Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang, Chengwen Pei, and Xun Wang

Appl. Phys. Lett. 75, 1 (1999); http://dx.doi.org/10.1063/1.124635 (3 pages) | Cited 23 times

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Based on total internal reflection and plasma dispersion effect, a SiGe/Si asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated. The switch performance is measured at the wavelength of 1.55 μm. A modulation depth of 90% at an injection current of 110 mA is obtained, and the switching time is about 0.2 μs. The device reaches a maximum optical switching at the injection current of 120 mA. The extinction ratio is larger than 34 dB and the crosstalk and insertion loss are less than −18.5 and 2.86 dB, respectively. © 1999 American Institute of Physics.
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42.65.Wi Nonlinear waveguides
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.Et Waveguides, couplers, and arrays
73.50.Mx High-frequency effects; plasma effects
42.86.+b Optical workshop techniques

Very high-efficiency green organic light-emitting devices based on electrophosphorescence

M. A. Baldo, S. Lamansky, P. E. Burrows, M. E. Thompson, and S. R. Forrest

Appl. Phys. Lett. 75, 4 (1999); http://dx.doi.org/10.1063/1.124258 (3 pages) | Cited 985 times

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We describe the performance of an organic light-emitting device employing the green electrophosphorescent material, fac tris(2-phenylpyridine) iridium [Ir(ppy)3] doped into a 4,4′-N,N′-dicarbazole-biphenyl host. These devices exhibit peak external quantum and power efficiencies of 8.0% (28 cd/A) and 31 lm/W, respectively. At 100 cd/m2, the external quantum and power efficiencies are 7.5% (26 cd/A) and 19 lm/W at an operating voltage of 4.3 V. This performance can be explained by efficient transfer of both singlet and triplet excited states in the host to Ir(ppy)3, leading to a high internal efficiency. In addition, the short phosphorescent decay time of Ir(ppy)3 (<1 μs) reduces saturation of the phosphor at high drive currents, yielding a peak luminance of 100 000 cd/m2. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Emission of prompt electrons during excimer laser ablation of aluminum targets

S. Amoruso, M. Armenante, R. Bruzzese, N. Spinelli, R. Velotta, and X. Wang

Appl. Phys. Lett. 75, 7 (1999); http://dx.doi.org/10.1063/1.124259 (3 pages) | Cited 20 times

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We report on prompt emission of fast electrons occurring during xenon–fluoride (351 nm) laser ablation of aluminum targets in the nanosecond regime. We have measured both the kinetic energy distribution and the energy-integrated time-of-flight distribution of these electrons. Experimental data evidence that the energetic electrons are produced during the laser pulse as a consequence of two-photon processes, and that space-charge effects influence the photoemitted electron kinetic energy, leading to prompt electrons kinetic energy distributions extending up to ≈15 eV. © 1999 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
61.82.Bg Metals and alloys
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Optical absorption edge characteristics of cubic boron nitride thin films

Guanghua Chen, Xingwang Zhang, Bo Wang, Xuemei Song, Bentao Cui, and Hui Yan

Appl. Phys. Lett. 75, 10 (1999); http://dx.doi.org/10.1063/1.124260 (3 pages) | Cited 22 times

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Boron nitride films with different cubic phase contents were deposited in a radio frequency bias sputtering system by a two-stage deposition process. The Fourier transform infrared spectra and UV-visible transmittance and reflection spectra were measured. The optical absorption edge of BN films consists of a low energy region in which α increases exponentially as incident photon energy hν, and a high energy region, in which α varies as (hν)m, which is the characteristics of amorphous materials. These two regions are fitted by the Urbach tail model and the band-to-band transition model with an effective medium approach, and the Urbach energy and the optical band gap are determined from these fits. With an increase in the cubic boron nitride (c-BN) content, the absorption edge shifts to the higher energy and the optical band gap increases. For a BN film with 88% cubic phase, the optical band gap exceeds 6.0 eV, which is comparable to that of c-BN single crystal. © 1999 American Institute of Physics.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors

All optical mode locking of Fabry–Perot laser diode via mutual injection locking between two longitudinal modes

Hideaki Kasuya, Masakazu Mori, Ryosuke Goto, Toshio Goto, and Kazuo Yamane

Appl. Phys. Lett. 75, 13 (1999); http://dx.doi.org/10.1063/1.124261 (3 pages) | Cited 8 times

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A method to mode lock a Fabry–Perot laser diode (F–P LD) by purely optical means is proposed. Two F–P modes are mutually injection locked with the aid of injected cw light at the center frequency of the two modes. The other F–P modes are cascadingly mode locked owing to the cavity-enhanced nondegenerate four-wave mixing in the F–P LD. The principle of the method was confirmed by observing the linewidth narrowing of the lasing longitudinal modes and the generated optical pulse train at the repetition frequency of one F–P mode spacing. © 1999 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Anisotropic holographic scattering in centrosymmetric sodium nitroprusside

M. Imlau, R. Schieder, R. A. Rupp, and Th. Woike

Appl. Phys. Lett. 75, 16 (1999); http://dx.doi.org/10.1063/1.124262 (3 pages) | Cited 12 times

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Anisotropic holographic light scattering has been discovered in centrosymmetric single crystals of sodiumnitroprusside, Na2[Fe(CN)5NO]⋅2H2O, in which the photorefractive response is based on the excitation of metastable electronic states. Besides a bright homogeneous scattering corona generated by isotropic scattering, a sharp scattering ring builds up with light polarized orthogonal to that of the pump beam and the corona. This anisotropic scattering resulting from interference of scattered waves with the pump beam occurs although there is no linear electro-optic effect in centrosymmetric crystals. © 1999 American Institute of Physics.
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42.70.Gi Light-sensitive materials
42.70.Ln Holographic recording materials; optical storage media
42.40.-i Holography
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium–tin–oxide anodes

J. S. Kim, F. Cacialli, A. Cola, G. Gigli, and R. Cingolani

Appl. Phys. Lett. 75, 19 (1999); http://dx.doi.org/10.1063/1.124263 (3 pages) | Cited 34 times

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We report investigations of the electronic transport properties carried out by means of the Hall technique for indium–tin–oxide thin films on glass after a variety of surface treatments. We find that oxygen-plasma treatments induce a significant increase in the carrier concentration, and a less significant decrease of mobilities with respect to “as-received” or aquaregia treated substrates. We consider that this is indicative of an increased concentration of defects, as a result of the plasma exposure. © 1999 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.65.-b Surface treatments
85.60.Jb Light-emitting devices
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.05.Hd Other semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser

Z. Zou, D. L. Huffaker, S. Csutak, and D. G. Deppe

Appl. Phys. Lett. 75, 22 (1999); http://dx.doi.org/10.1063/1.124264 (3 pages) | Cited 15 times

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Data are presented on the room-temperature, continuous-wave ground state lasing characteristics from a quantum dot vertical-cavity surface-emitting laser. A threshold current of 703 μA is obtained for a 10-μm-diameter oxide aperture using a three-stack active region, with the lasing wavelength of ∼1.06 μm. Lasing is obtained for apertures as small as 2 μm square with threshold current of 268 μA. The threshold conditions are discussed with an emphasis on the spontaneous and stimulated decay rates due to resonant excitation. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Substrate effects on GaN photoconductive detector performance

G. M. Smith, J. M. Redwing, R. P. Vaudo, E. M. Ross, J. S. Flynn, and V. M. Phanse

Appl. Phys. Lett. 75, 25 (1999); http://dx.doi.org/10.1063/1.124265 (3 pages) | Cited 17 times

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GaN photoconductive detectors were fabricated on three substrates: sapphire, SiC, and GaN-on-sapphire substrates. The undoped GaN was deposited on each substrate by metalorganic vapor phase epitaxy. The structural properties, as measured by transmission electron microscopy, x-ray diffraction, and atomic force microscopy, of the layers grown on GaN-on-sapphire and SiC were superior to those of the layers grown on sapphire. A corresponding improvement in optical response and sharpness of optical response of the photoconductive detectors was observed with improved material quality. © 1999 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors

Nonresonant femtosecond second hyperpolarizabilities of intramolecular charge-transfer molecules with great excited- and ground-state dipole-moment differences

Mikio Yamashita, Shinji Kikuma, Yoshihisa Yamaoka, Hidetoshi Murakami, Ryuji Morita, and Hidemi Shigekawa

Appl. Phys. Lett. 75, 28 (1999); http://dx.doi.org/10.1063/1.124266 (3 pages) | Cited 2 times

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The femtosecond second hyperpolarizability due to the nonresonant electronic polarization for two intramolecular charge-transfer molecules, 6-propionyl-2-dimethylamino naphthalene and 2-anilinonaphthalene-6-sulfonic acid which possess the great permanent dipole-moment difference between the excited state and the ground state, is obtained from the measurement of the ultrafast change in refractive index using a time-resolved interferometer. It is found that the second hyperpolarizability increases parabolically from 5×10−34 to 4.3×10−32 esu with increasing the dipole-moment difference from 7.7 to 40 D, and this quantitative relationship is well explained by a quantum-mechanical equation describing the electronic second hyperpolarizability of one molecule with the permanent dipole-moment difference. © 1999 American Institute of Physics.
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07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
07.60.-j Optical instruments and equipment
33.15.Kr Electric and magnetic moments (and derivatives), polarizability, and magnetic susceptibility
31.50.Df Potential energy surfaces for excited electronic states
32.80.Rm Multiphoton ionization and excitation to highly excited states
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
42.65.-k Nonlinear optics
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Radio frequency plasma processing effects on the emission characteristics of a MeV electron beam cathode

J. I. Rintamaki, R. M. Gilgenbach, W. E. Cohen, R. L. Jaynes, M. E. Cuneo, and P. R. Menge

Appl. Phys. Lett. 75, 31 (1999); http://dx.doi.org/10.1063/1.124267 (3 pages) | Cited 6 times

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Experiments have proven that surface contaminants on the cathode of an electron beam diode influence electron emission current and impedance collapse. This letter reports on an investigation to reduce parasitic cathode current loss and to increase high voltage hold off capabilities by reactive sputter cleaning of contaminants. Experiments have characterized effective radio frequency (rf) plasma processing protocols for high voltage anode–cathode (A–K) gaps using a two-stage argon/oxygen and argon rf plasma discharge. Time-resolved optical emission spectroscopy measures contaminant (hydrogen) and bulk cathode (aluminum) plasma emission versus transported axial electron beam current turn on. Experiments were performed at accelerator parameters: V = −0.7 to −1.1 MV, I(diode)=3–30 kA, and pulse length=0.4–1.0 μs. Experiments using a two-stage low power (100 W) argon/oxygen rf discharge followed by a higher power (200 W) pure argon rf discharge yielded an increase in cathode turn-on voltage required for axial current emission from 662±174 kV to 981±97 kV. The turn-on time of axial current was increased from 100±22 to 175±42 ns. © 1999 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Secondary electron energy spectra emitted from radio frequency biased plasma electrodes

D. M. Shaw, M. Watanabe, H. Uchiyama, and G. J. Collins

Appl. Phys. Lett. 75, 34 (1999); http://dx.doi.org/10.1063/1.124268 (3 pages) | Cited 10 times

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The ion-induced secondary electron energy spectra from a radio frequency biased (13.56 MHz) electrically insulating (Al2O3) plasma electrode surface immersed in a separately powered inductively coupled plasma are studied both experimentally and theoretically. Radio frequency (rf) electrode bias voltages of 140 and 285 V (peak to ground) are employed and the complete electron energy spectra emitted from the electrode and accelerated by the rf sheath are measured 14 cm from the rf biased electrode using a differentially pumped retarding potential analyzer. A collisionless radio frequency Child–Langmuir sheath model is used to explain the experimentally measured electron energy spectra. © 1999 American Institute of Physics.
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79.20.Hx Electron impact: secondary emission

Modulated rf discharges as an effective tool for selecting excited species

Grazia Cicala, Mariadriana Creatore, Pietro Favia, Ritalba Lamendola, and Riccardo d’Agostino

Appl. Phys. Lett. 75, 37 (1999); http://dx.doi.org/10.1063/1.124269 (3 pages) | Cited 18 times

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Modulated NH3-fed rf glow discharges have been investigated; the emissions of the active species NH∗ and N2∗ have been collected during the modulation period (time on+time off). In this study, modulated discharges have been characterized by a constant time on of 7 ms and a tunable time off in the range of 0–1000 ms. It has been found that the power modulation represents an effective tool for selecting excited species: this procedure may be exploited in surface grafting treatments of polymers where high selectivity of chemical groups is requested, e.g., for preferentially grafting −NH2 groups onto polyethylene with respect to all other N-containing functionalities. © 1999 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.80.Hc Glow; corona
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.-b Surface treatments
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
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Room-temperature persistent spectral hole burning in SrFCl:Sm2+ films: Temporal and spatial response

M. Schnieper, F. Trotta, S. Bersier, and H. Bill

Appl. Phys. Lett. 75, 40 (1999); http://dx.doi.org/10.1063/1.124270 (3 pages) | Cited 4 times

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Persistent spectral hole burning was performed on the 7F0–5D1 transition of Sm2+ in thin films of SrFCl. Depending on the substrate and the growth conditions, a total hole depth between 47% and 70% was reached. The holes were Lorentzians of width 4(±0.3) cm−1. The time evolution of the hole depth was studied. It is described by two exponentials: a short time decay (t1 = 0.37 days) and a long time decay (t2 = 20.4 days) with a 20% infinite time limit. One- and two-photon burning mechanisms act. © 1999 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Temperature dependence of the reflectivity of silicon with surface oxide at wavelengths of 633 and 1047 nm

J. Heller, J. W. Bartha, C. C. Poon, and A. C. Tam

Appl. Phys. Lett. 75, 43 (1999); http://dx.doi.org/10.1063/1.124271 (3 pages) | Cited 9 times

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We measure the temperature coefficient of the reflectivity of Si at a red wavelength of 633 nm that is much larger than the Si band gap, and at an infrared wavelength of 1047 nm that is close to the band gap. Our reflectivity measurement is done over a temperature range from room temperature to 200 °C, with an accuracy of better than 1 part in 105. Our results show that the temperature coefficient for the infrared reflection is over three times larger than that for the red reflection over the temperature range studied. Our results and technique can be useful for remote monitoring of temperatures of Si or other materials. © 1999 American Institute of Physics.
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78.30.Am Elemental semiconductors and insulators
07.20.Dt Thermometers

Direct measurement of strain in a Ge island on Si(001)

Peter D. Miller, Chuan-Pu Liu, William L. Henstrom, J. Murray Gibson, Y. Huang, P. Zhang, T. I. Kamins, D. P. Basile, and R. Stanley Williams

Appl. Phys. Lett. 75, 46 (1999); http://dx.doi.org/10.1063/1.124272 (3 pages) | Cited 30 times

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We report on a direct measurement of the strain in a single Ge “quantum dot” island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of 0.86±0.17% average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed. © 1999 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.10.Pz Instruments for strain, force, and torque
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Bulk ferromagnetic glasses prepared by flux melting and water quenching

T. D. Shen and R. B. Schwarz

Appl. Phys. Lett. 75, 49 (1999); http://dx.doi.org/10.1063/1.124273 (3 pages) | Cited 156 times

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Several ferromagnetic bulk amorphous alloys of the type Fe–(Co, Cr, Mo, Ga, Sb)–P–B–C, containing between 62 and 71 at. % Fe, have been prepared in the form of 4-mm-diam rods. The glass synthesis consists of mechanically alloying the constituents, purifying the melts in B2O3 flux inside fused silica tubes, and quenching the melts at cooling rates on the order of 100 K/s. All these glasses have a large supercooled region Tx−Tg, ranging from 35 to 61 K, within which the glass can be shaped under a relatively small applied load. It is shown that the value of Tx−Tg depends strongly on the metalloid composition. These bulk metallic glasses have very low coercivity and low hysteresis losses. © 1999 American Institute of Physics.
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81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Bb Fe and its alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Selective distribution of arsenic precipitates in low-temperature-grown III–V heterostructures

M. N. Chang, N. T. Yeh, C. M. Lu, K. C. Hsieh, and J.-I. Chyi

Appl. Phys. Lett. 75, 52 (1999); http://dx.doi.org/10.1063/1.124274 (3 pages) | Cited 1 time

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We have investigated arsenic precipitation in arsenide heterostructures grown at low temperature by molecular beam epitaxy. In these heterostructures, both doping and bond strength are found to affect arsenic precipitation during thermal annealing. For GaAs/Al0.3Ga0.7As multiple quantum wells, where GaAs is Be doped and Al0.3Ga0.7As is Si doped, arsenic precipitates preferentially appear in the GaAs region after annealing. For In0.1Ga0.9As/GaAs/In0.1Al0.9As heterostructures, whether they are doped or not, arsenic precipitates always tend to condense in the In0.1Ga0.9As region, indicating that the bond strength effect dominates the process of arsenic precipitation over the doping effect. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
64.75.-g Phase equilibria
81.05.Ea III-V semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Au–Cu alloy nanoclusters in silica formed by ion implantation and annealing in reducing or oxidizing atmosphere

F. Gonella, G. Mattei, P. Mazzoldi, C. Sada, G. Battaglin, and E. Cattaruzza

Appl. Phys. Lett. 75, 55 (1999); http://dx.doi.org/10.1063/1.124275 (3 pages) | Cited 25 times

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The formation of binary alloy clusters in sequentially ion-implanted Au–Cu silica glass has been studied as a function of the annealing atmosphere. Alloy formation has been unambiguously evidenced in the as-implanted samples. The selective influence on Au precipitation of either oxygen or hydrogen annealing atmosphere leads to separation of gold and copper or to Au–Cu alloy cluster formation, respectively. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Pj Glass-based composites, vitroceramics
61.46.-w Structure of nanoscale materials
61.80.Jh Ion radiation effects
61.43.Fs Glasses
81.40.Gh Other heat and thermomechanical treatments
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
78.40.Kc Metals, semimetals, and alloys

Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes

C. Y. Liu, Chih Chen, C. N. Liao, and K. N. Tu

Appl. Phys. Lett. 75, 58 (1999); http://dx.doi.org/10.1063/1.124276 (3 pages) | Cited 84 times

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Room-temperature electromigration occurs in a thin stripe of eutectic SnPb solder stressed by a current density of 105 amp/cm2. Hillocks and voids grow at the anode and the cathode, respectively. While the dominant diffusion species is Sn in this two-phase alloy, the growth of the hillocks, surprisingly, originates from the Pb grains. © 1999 American Institute of Physics.
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81.30.Bx Phase diagrams of metals, alloys, and oxides
66.30.Qa Electromigration

Stability, geometry, and electronic structure of the boron nitride B36N36 fullerene

Simone S. Alexandre, Mário S. C. Mazzoni, and Hélio Chacham

Appl. Phys. Lett. 75, 61 (1999); http://dx.doi.org/10.1063/1.124277 (3 pages) | Cited 61 times

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We apply first-principles calculations to study the structural and electronic properties of a boron nitride fullerene-like cluster, B36N36. This cluster has shape and dimensions comparable to those of a single-shelled BN fullerene recently produced in an electron-beam irradiation experiment. The calculations show that B36N36 is energetically less favorable than C60, when both are compared to nanotube structures. This is consistent with the experimental difficulty to obtain BN fullerenes. On the other hand, B36N36 presents a large energy gap, larger in fact than that of a BN nanotube of the same diameter. This is an indication that the molecule is a stable one, once it is formed. © 1999 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
36.40.Qv Stability and fragmentation of clusters
36.40.Mr Spectroscopy and geometrical structure of clusters
71.20.Tx Fullerenes and related materials; intercalation compounds
36.40.Cg Electronic and magnetic properties of clusters

Electromechanical effect in freely suspended liquid crystal films

Serguei V. Yablonskii, Toshiyasu Oue, Hidetaka Nambu, Aleksey S. Mikhailov, Masanori Ozaki, and Katsumi Yoshino

Appl. Phys. Lett. 75, 64 (1999); http://dx.doi.org/10.1063/1.124325 (3 pages) | Cited 12 times

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Electromechanical effect in a freely suspended film based on 4-n-octyl-4′-cyanobiphenyl has been detected by means of light scattering at both the first and second harmonics of the exciting electric field. Experimental studies on voltage and frequency dependencies of the optical response are carried out. Organic solvent vapor is shown to strongly affect the electromechanical response. A feasible mechanism for the electromechanical effect is discussed. © 1999 American Institute of Physics.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
68.15.+e Liquid thin films
77.65.-j Piezoelectricity and electromechanical effects
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
78.20.Jq Electro-optical effects

Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers

M. J. Bergmann, Ü. Özgür, H. C. Casey, H. O. Everitt, and J. F. Muth

Appl. Phys. Lett. 75, 67 (1999); http://dx.doi.org/10.1063/1.124278 (3 pages) | Cited 44 times

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Dispersion of the ordinary and extraordinary indices of refraction for wurtzite AlxGa1−xN epitaxial layers with x = 0.00, 0.04, 0.08, 0.11, and 0.20 in the range of wavelengths 457<λ<980 nm were measured via a prism-coupled waveguide technique. The quantitative accuracy of x is ±10% and the accuracy of the refractive indices is ∼ ±0.01. The dispersion is found to be well described by a 1st-order Sellmeier dispersion formula. A simple functional form is presented that allows calculation of the refractive indices as functions of x and λ. © 1999 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
78.20.Fm Birefringence

Dynamic electron scattering distinguishes dodecahedral and tetrahedral crystallographic sites in garnet structure

János L. Lábár

Appl. Phys. Lett. 75, 70 (1999); http://dx.doi.org/10.1063/1.124279 (3 pages) | Cited 1 time

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It is shown in this letter that, in contrast to the accepted belief in the literature, it is possible to determine if a minority component is located on the dodecahedral, octahedral, or tetrahedral sites in a garnet single crystal. This prediction of ours is based on dynamical Bloch-wave calculations and proved experimentally with x-ray measurements in a transmission electron microscope. The previous literature seemed to agree on the assumption that the dodecahedral and tetrahedral sites are indistinguishable from each other. © 1999 American Institute of Physics.
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61.66.Fn Inorganic compounds
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
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Origin of the time dependence of wet oxidation of AlGaAs

Carol I. H. Ashby, Monica M. Bridges, Andrew A. Allerman, B. E. Hammons, and Hong Q. Hou

Appl. Phys. Lett. 75, 73 (1999); http://dx.doi.org/10.1063/1.124280 (3 pages) | Cited 23 times

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The time dependence of the wet oxidation of high-Al-content AlGaAs can be either linear, indicating reaction-rate limitation, or parabolic, indicating diffusion-limited rates. The transition from linear to parabolic time dependence can be explained by the increased rate of the formation of intermediate As2O3 versus its reduction to elemental As. A steadily increasing thickness of the As2O3-containing region at the oxidation front will shift the process from the linear to the parabolic regime. This shift from reaction-rate limited (linear) to diffusion-limited (parabolic) time dependence is favored by increasing temperature or increasing Al mole fraction. © 1999 American Institute of Physics.
Show PACS
81.65.Mq Oxidation
81.05.Ea III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
78.66.Fd III-V semiconductors
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