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6 Sep 1999

Volume 75, Issue 10, pp. 1345-1481

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Transconductance oscillations in metal–oxide–semiconductor field-effect transistors with thin silicon-on-insulator originated by quantized energy levels

Tetsuyasu Takahashi, Mitiko Miura-Mattausch, and Yasuhisa Omura

Appl. Phys. Lett. 75, 1458 (1999); http://dx.doi.org/10.1063/1.124724 (3 pages) | Cited 1 time

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Transconductance oscillations have been observed in silicon-on-insulator metal–oxide–semiconductor field-effect transistors with the separation by implanted oxygen technology at 39 K. Here, we demonstrate that the origin of the oscillations is attributed to a terrace structure of the buried oxide surface. The terrace results in different thicknesses of the active Si layer. Quantized energy levels at the thin Si layer are higher than those at the thicker one. These different energy levels act as barriers for carriers moving in the channel. The observed transconductance oscillations are well reproduced by fitting the effective terrace periodicity. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.20.-r Electron states at surfaces and interfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)

Mechanical tuning of tunnel gaps for the assembly of single-electron transistors

Sven-Bertil Carlsson, Tobias Junno, Lars Montelius, and Lars Samuelson

Appl. Phys. Lett. 75, 1461 (1999); http://dx.doi.org/10.1063/1.124725 (3 pages) | Cited 12 times

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We have fabricated gold single-electron transistors (SETs), operating up to 25 K, with tunnel gaps that could be individually tuned during fabrication. A combination of atomic-force-microscopy manipulation of nanodiscs and in situ electrical measurements was used to form statically stable tunnel gaps between the discs and lithographically defined electrodes. The gap resistances could be tuned to predetermined values over three orders of magnitude between ∼1 MΩ and ∼2 GΩ, corresponding to gap widths in the range of 3–10 Å. We report on SETs with symmetrically and asymmetrically coupled islands, i.e., with equal or different tunnel resistances. In the asymmetric SET a distinct Coulomb staircase was observed. © 1999 American Institute of Physics.
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85.35.Gv Single electron devices
73.23.Hk Coulomb blockade; single-electron tunneling
85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
73.61.At Metal and metallic alloys

Microstructural evolution induced by scanned laser annealing in Al interconnects

C. S. Hau-Riege and C. V. Thompson

Appl. Phys. Lett. 75, 1464 (1999); http://dx.doi.org/10.1063/1.124726 (3 pages) | Cited 9 times

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A method has been developed for inducing controlled microstructural evolution in thin films patterned into lines, using scanned laser annealing (SLA). Experimental studies show at least three distinct types of microstructures resulting from SLA, depending on the scan rate and laser power. Starting with a polygranular initial microstructure, scanned laser annealing leads to either a large-grained polygranular structure, a bamboo structure, or an agglomerated structure. Microstructural evolution induced by SLA was found to lead to different evolution than conventional annealing, as well as to produce unique large-grained “bamboo” structures. Simulations of SLA further suggest the possibility of producing near-single crystal microstructures under properly controlled conditions. © 1999 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
61.72.Cc Kinetics of defect formation and annealing

Facet temperature distribution in broad stripe high power laser diodes

Toshiro Hayakawa

Appl. Phys. Lett. 75, 1467 (1999); http://dx.doi.org/10.1063/1.124727 (3 pages) | Cited 7 times

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Show Abstract
Facet temperature distribution has been measured for broad stripe high power lasers using reflectance modulation. Temporal evolution of the two-dimensional facet temperature distribution is directly measured. Measurements have been made for devices with various stripe widths. Devices with wider stripes show higher temperature and broader region of high temperature because the lateral heat dissipation becomes more ineffective. © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
07.20.Dt Thermometers
42.79.Bh Lenses, prisms and mirrors
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
78.66.Fd III-V semiconductors

Excess noise characteristics of amorphous silicon staircase photodiode films

Kazuaki Sawada, Masahiro Akiyama, and Makoto Ishida

Appl. Phys. Lett. 75, 1470 (1999); http://dx.doi.org/10.1063/1.124728 (3 pages) | Cited 1 time

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An a-Si:H (hydrogenated amorphous silicon)/a-SiC:H (hydrogenated amorphous silicon carbide) staircase photodiode with linear graded-gap multiplication regions is useful for photoconversion. Noise characteristics of the a-Si:H/a-SiC:H staircase photodiode films with one and three linear graded-gap region were studied. The measured shot-noise characteristics of the photodiode film, which was operated in a photocurrent multiplication region, corresponded to the ideal value which was calculated as free-excess noise. It was found that in the graded-gap region, the a-Si:H/a-SiC:H staircase photodiode film does not generate extra noise during the photocurrent multiplication. These results indicate that the staircase photodiode films are a promising device for the high-sensitive imaging sensor. © 1999 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Td Noise processes and phenomena
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
42.79.Pw Imaging detectors and sensors
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