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6 Sep 1999

Volume 75, Issue 10, pp. 1345-1481

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Determination of the energy-dependent conduction band mass in SiO2

R. Ludeke, E. Cartier, and Andreas Schenk

Appl. Phys. Lett. 75, 1407 (1999); http://dx.doi.org/10.1063/1.124709 (3 pages) | Cited 19 times

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The energy dependence of the conduction band mass in amorphous SiO2 was deduced from quantum interference oscillations in the ballistic electron emission microscope current, and separately from Monte Carlo simulations of the electron mean free paths obtained by internal photoemission. The results imply a strong nonparabolicity of the conduction band of SiO2. © 1999 American Institute of Physics.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.23.An Theories and models; localized states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Fq High-field and nonlinear effects
71.38.-k Polarons and electron-phonon interactions

Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation

W. Shan, K. M. Yu, W. Walukiewicz, J. W. Ager, E. E. Haller, and M. C. Ridgway

Appl. Phys. Lett. 75, 1410 (1999); http://dx.doi.org/10.1063/1.124951 (3 pages) | Cited 49 times

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We have studied the optical properties of nitrogen implanted GaAs and AlGaAs samples. The fundamental band-gap energy has been found to decrease with the increasing N+ implantation dose in a manner similar to that commonly observed in GaNAs and GaInNAs alloys grown by molecular beam epitaxy or metal organic chemical vapor deposition. Our results indicate that GaNxAs1−x and AlxGa1−xNyAs1−y alloys can be formed by implantation of nitrogen followed by appropriate postimplantation annealing treatments. As inferred from the magnitude of the band gap shift, the percentage of the implanted N atoms incorporated on the substitutional As sites is estimated to be around 12%. © 1999 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
71.20.Nr Semiconductor compounds
78.40.Fy Semiconductors
78.66.Fd III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing

Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots

A. I. Yakimov, A. V. Dvurechenskii, Yu. Yu. Proskuryakov, A. I. Nikiforov, O. P. Pchelyakov, S. A. Teys, and A. K. Gutakovskii

Appl. Phys. Lett. 75, 1413 (1999); http://dx.doi.org/10.1063/1.124710 (3 pages) | Cited 63 times

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Room-temperature infrared photoconductivity in a single layer of Ge self-assembled quantum dots incorporated into silicon p-i-n diode is reported. An in-plane polarized photocurrent response with two bias controlled maxima at 2.9 μm and at 1.7 μm wavelength has been observed. The two kinds of absorption driven by reverse bias in opposite ways are ascribed to the intraband hole bound-to-continuum transition and to the interband excitonic transition. © 1999 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0 ⩽ X ⩽ 0.024) grown by gas-source molecular beam epitaxy

H. P. Xin, C. W. Tu, and M. Geva

Appl. Phys. Lett. 75, 1416 (1999); http://dx.doi.org/10.1063/1.124711 (3 pages) | Cited 46 times

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P-type, Be-doped GaInNAs layers (1100 Å thick) are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. High-resolution x-ray rocking curves show that the Ga0.892In0.108NxAs1−x peak shifts closer to the GaAs substrate peak with increasing N concentration, indicating reduced strain. After rapid thermal annealing (RTA) at 700 °C for 10 s, the Ga0.892In0.108As sample suffers strain relaxation, but the N-containing samples remain pseudomorphically strained, suggesting better thermal stability of GaInNAs. The wavelength of room-temperature photoluminescence redshifts from 0.988 to 1.276 μm, due to large band gap bowing, with N concentration increased from 0 to 0.024. Secondary ion mass spectrometry results show no Be diffusion, but hydrogen incorporation alongside N. The free carrier concentration is decreased by one order of magnitude mainly due to H passivation, but after RTA at 700 °C, it is increased to half that of GaInAs due to the reduced H concentration. The product of carrier concentration and Hall mobility is increased from one-tenth to about half that of the GaInAs sample. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
61.72.Cc Kinetics of defect formation and annealing
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.65.Rv Passivation
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
68.60.Dv Thermal stability; thermal effects

A simple reflectance method for estimation of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructures

L. S. Yu, D. Qiao, S. S. Lau, and J. M. Redwing

Appl. Phys. Lett. 75, 1419 (1999); http://dx.doi.org/10.1063/1.124712 (3 pages) | Cited 7 times

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In this study, we report a simple optical reflectance method to characterize the Al mole fraction in bulk AlGaN and AlGaN/GaN heterostructures. This method is based on the concept of Fabry–Perot oscillations of a probing beam when the photon energy of the beam falls below the band-gap energy of the semiconductor. The accuracy and merits of this method in comparison with the more elaborate photoluminescence method are discussed. © 1999 American Institute of Physics.
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71.20.Nr Semiconductor compounds
78.66.Fd III-V semiconductors
78.40.Fy Semiconductors

Silicon-based single-electron memory using a multiple-tunnel junction fabricated by electron-beam direct writing

A. Dutta, S. P. Lee, S. Hatatani, and S. Oda

Appl. Phys. Lett. 75, 1422 (1999); http://dx.doi.org/10.1063/1.124713 (3 pages) | Cited 9 times

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Multiple-tunnel-junction-based nonvolatile single-electron-memory devices are promising for fast write/erase operation and long retention time. Fabrication of multiple-tunnel junctions with a predetermined number of barriers and islands is a major problem in realizing such devices. We have fabricated multiple-tunnel-junction-based single-electron devices by an electron-beam direct writing technique in a silicon-on-insulator layer. Using this technique, it is possible to fabricate multiple ultrasmall islands and tunnel barriers at a predetermined position, which is very important for reproducible device characteristics. Single-electron-memory devices based on multiple-tunnel junctions are fabricated. In these devices, a multiple-tunnel junction connects the gate electrode and a storage island. The Coulomb blockade across the multiple-tunnel junction acts as an energy barrier. Single-electron-memory operation is observed at 20 K. Retention time of at least 4 h has been observed. © 1999 American Institute of Physics.
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85.35.Gv Single electron devices
73.23.Hk Coulomb blockade; single-electron tunneling
85.40.Hp Lithography, masks and pattern transfer

Loop-wire medium for investigating plasmons at microwave frequencies

D. R. Smith, D. C. Vier, Willie Padilla, Syrus C. Nemat-Nasser, and S. Schultz

Appl. Phys. Lett. 75, 1425 (1999); http://dx.doi.org/10.1063/1.124714 (3 pages) | Cited 63 times

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We present numerical simulations and microwave measurements on a loop-wire structure that acts as an effective medium exhibiting a well-defined bulk plasma frequency in the microwave regime, with an effective negative dielectric function below this plasma frequency. The dependence of this plasmonic response on the self-inductance of the constituent wire elements is made explicit. A finite structure, approximately spherical, composed of this inductive medium is studied, and reveals subwavelength surface plasmon resonances below the bulk plasma frequency. © 1999 American Institute of Physics.
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71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
72.30.+q High-frequency effects; plasma effects
73.50.Mx High-frequency effects; plasma effects
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures

S.-W. Lee, K. Hirakawa, and Y. Shimada

Appl. Phys. Lett. 75, 1428 (1999); http://dx.doi.org/10.1063/1.124715 (3 pages) | Cited 116 times

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We have designed and fabricated a quantum dot infrared photodetector which utilizes the lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to the bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 4.7 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, it is found that the observed photosensitivity survives up to 190 K. © 1999 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Thin-film CuIn1−xGaxSe2 photovoltaic cells from solution-based precursor layers

R. N. Bhattacharya, W. Batchelor, J. F. Hiltner, and J. R. Sites

Appl. Phys. Lett. 75, 1431 (1999); http://dx.doi.org/10.1063/1.124716 (3 pages) | Cited 21 times

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We have fabricated 15.4% and 12.4% efficient thin-film CuIn1−xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn1−xGaxSe2. The ED and EL device parameters are compared with those of a 17.7% PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics. © 1999 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
81.05.Hd Other semiconductors
81.15.Pq Electrodeposition, electroplating
84.60.Jt Photoelectric conversion
73.50.Pz Photoconduction and photovoltaic effects

Photoluminescence and interfacial heat transfer in gallium arsenide

Chang Sheng Liu and John F. Kauffman

Appl. Phys. Lett. 75, 1434 (1999); http://dx.doi.org/10.1063/1.124717 (3 pages) | Cited 1 time

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Laser heating of irradiated samples will occur whenever the sample does not make thermal contact to a heat sink. We have explored laser heating of GaAs samples under modest excitation powers by observing photoluminescence intensity versus time. The observed photoluminescence diminishes exponentially in time following illumination, and the initial photoluminescence intensity is recovered after illumination ceases with the same time constant as observed in the degradation. A model based on linear interfacial heat transfer predicts exponential photoluminescence degradation, and the effect is parameterized in terms of an interfacial heat transfer constant. A variety of experimental results are consistent with predictions of the model. © 1999 American Institute of Physics.
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78.55.Cr III-V semiconductors
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Role of implantation-induced defects on the response time of semiconductor saturable absorbers

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller

Appl. Phys. Lett. 75, 1437 (1999); http://dx.doi.org/10.1063/1.124718 (3 pages) | Cited 15 times

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Arsenic ion implantation with thermal annealing was used to shorten the response times of GaAs-based saturable absorber structures. Ultrafast absorption bleaching measurements indicated that the recovery time was decreased with increasing the implantation dose. However, above a certain dose the recovery time increased again. This behavior was correlated with the microstructure of the residual implantation defects. © 1999 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors

High-confinement SiGe low-loss waveguides for Si-based optoelectronics

S. P. Pogossian, L. Vescan, and A. Vonsovici

Appl. Phys. Lett. 75, 1440 (1999); http://dx.doi.org/10.1063/1.124719 (3 pages) | Cited 5 times

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The realization of two-dimensional SiGe/Si strained-layer low-loss waveguide (1.7 db/cm) is reported. The waveguide geometry is grown by selective epitaxy. It ensures loosened cutoff and critical thickness conditions. This geometry could be applied for waveguide active devices like light emitting diodes, photodetectors, or modulators. Because of the high cross section of the guided mode, these devices could be easily interfaced with optical fibers. © 1999 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.60.-q Optoelectronic devices
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