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6 Sep 1999

Volume 75, Issue 10, pp. 1345-1481

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Polarization analysis of diffracted orders from a birefringence grating recorded on azobenzene containing polymer

F. Lagugné Labarthet, P. Rochon, and A. Natansohn

Appl. Phys. Lett. 75, 1377 (1999); http://dx.doi.org/10.1063/1.124699 (3 pages) | Cited 45 times

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Polarization analyses of transmitted and first-diffracted orders have been performed on photoinduced gratings in azopolymers. The polarization states of diffracted orders depend strongly on irradiation time because of the contribution from both a phase grating at short time and a surface relief grating at longer time. These results are nicely explained using a Jones’ matrix approach which predicts the polarization states of transmitted and diffracted orders of polarization holographic gratings. © 1999 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
78.20.Fm Birefringence
42.70.Jk Polymers and organics
42.79.Dj Gratings

1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes

R. J. Curry and W. P. Gillin

Appl. Phys. Lett. 75, 1380 (1999); http://dx.doi.org/10.1063/1.124700 (3 pages) | Cited 86 times

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Organic light-emitting diodes have been fabricated using erbium tris(8-hydroxyquinoline) as the emitting layer and N, N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine as the hole-transporting layer. Room-temperature electroluminescence was observed at 1.54 μm due to intra-atomic transitions between the 4I13/2 and 4I15/2 levels in the Er3+ ion. These results suggest a possible route to producing a silicon-compatible 1.54 μm source technology. © 1999 American Institute of Physics.  
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds
78.66.Qn Polymers; organic compounds

Local vibrational modes as a probe of activation process in p-type GaN

H. Harima, T. Inoue, S. Nakashima, M. Ishida, and M. Taneya

Appl. Phys. Lett. 75, 1383 (1999); http://dx.doi.org/10.1063/1.124701 (3 pages) | Cited 33 times

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Raman spectra for a series of Mg-doped GaN films grown by metal organic chemical vapor deposition and annealed in N2 ambiance at different temperatures have been investigated. Some local vibrational modes related to hydrogen were observed, showing drastic changes with the annealing temperature. The spectra show clearly that H impurities incorporated in as-grown films, which passivate Mg acceptors, are released from the Mg–N bonding at above ∼ 600 °C, and diffuse in the film to form new chemical bondings. We have also observed a local mode related to activated Mg acceptors. This mode is conveniently used as a probe of the activation process of Mg acceptors. © 1999 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
63.20.Pw Localized modes

Coplanar alignment of mesogenic moieties in a photocrosslinked liquid crystalline polymer film containing cinnamoyl groups

Nobuhiro Kawatsuki, Hirofumi Takatsuka, and Tohei Yamamoto

Appl. Phys. Lett. 75, 1386 (1999); http://dx.doi.org/10.1063/1.124702 (3 pages) | Cited 4 times

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Coplanar alignment of mesogenic groups using polymer films of a methacrylate comprising a photocrosslinkable 4′-(2-cinnamoyloxyethoxy)-biphenyl group and a photoinactive 4-cyanobiphenyl group was realized by slantwise ultraviolet (UV) irradiation. Slantwise absorption measurement revealed that an orientational plane of the mesogenic groups was perpendicular to direction of the UV light propagation. The orientational angle and the ellipsoid of refractive index of the film could be regulated by changing the irradiation angle and degree of polarization of the UV exposure, respectively. © 1999 American Institute of Physics.
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61.30.-v Liquid crystals
61.25.H- Macromolecular and polymers solutions; polymer melts
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
82.50.-m Photochemistry
68.15.+e Liquid thin films

Reduced oxygen diffusion through beryllium doped platinum electrodes

R. Stumpf, C.-L. Liu, and C. Tracy

Appl. Phys. Lett. 75, 1389 (1999); http://dx.doi.org/10.1063/1.124703 (3 pages) | Cited 9 times

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Using first principles electronic structure calculations we screen nine elements for their potential to retard oxygen diffusion through polycrystalline Pt (p-Pt) films. We determine that O diffuses preferentially as interstitial along Pt grain boundaries (GBs). The calculated barriers are compatible with experimental estimates. We find that Be controls O diffusion through p-Pt. Beryllium segregates to Pt GBs at interstitial (i) and substitutional (s) sites. i-Be is slightly less mobile than O and it repels O, thus stuffing the GB. s-Be has a high diffusion barrier and it forms strong bonds to O, trapping O in the GB. Experiments confirm our theoretical predictions. © 1999 American Institute of Physics.
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66.30.J- Diffusion of impurities
71.15.-m Methods of electronic structure calculations
61.72.Mm Grain and twin boundaries
64.75.-g Phase equilibria
61.72.J- Point defects and defect clusters
68.55.-a Thin film structure and morphology

Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide

Manabu Ishimaru and Kurt E. Sickafus

Appl. Phys. Lett. 75, 1392 (1999); http://dx.doi.org/10.1063/1.124704 (3 pages) | Cited 6 times

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Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy and ion channeling (RBS/C) have been used to characterize the microstructures and damage distributions in oxygen-ion-implanted silicon carbide (SiC). 6H–SiC single crystals with [0001] orientation were irradiated with 180 keV O+ ions at 650 °C to fluences ranging from 0.2×1018 to 1.4×1018/cm2. No continuous buried amorphous layer was formed in the specimen with 0.2×1018 O+/cm2, although there were striated regions consisting of amorphous and crystalline structures at depth between 200 and 300 nm. A continuous buried amorphous layer appeared above 0.4×1018 O+/cm2, and the amorphous regions grew in size with increasing fluence. TEM and RBS/C results indicated that microstructures and elemental distributions change drastically between 0.7×1018 and 1.4×1018 O+/cm2. © 1999 American Institute of Physics.
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61.82.Fk Semiconductors
61.72.up Other materials
61.80.Jh Ion radiation effects
61.72.J- Point defects and defect clusters
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Atomic force microscopy phase imaging of conductive polymer blends with ultralow percolation threshold

Jérôme Planès, Yves Samson, and Yasmina Cheguettine

Appl. Phys. Lett. 75, 1395 (1999); http://dx.doi.org/10.1063/1.124705 (3 pages) | Cited 12 times

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Tapping-mode atomic force microscopy is used to image the conducting network of polyaniline inside organic blends. The greater stiffness of the conducting polymer phase with respect to the matrix leads to good resolution phase contrast imaging. Cross-section images provide a unique insight in the distribution of the conductive phase within the matrix. © 1999 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
73.61.Ph Polymers; organic compounds
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Alkali metal coactivators in SrS: Cu,F thin-film electroluminescent devices

P. D. Keir, J. F. Wager, B. L. Clark, D. Li, and D. A. Keszler

Appl. Phys. Lett. 75, 1398 (1999); http://dx.doi.org/10.1063/1.124706 (3 pages) | Cited 17 times

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A unique approach for obtaining bright and efficient saturated green phosphors for alternating-current thin-film electroluminescent (ACTFEL) device applications is presented. The approach involves color-shifting blue SrS:Cu,F ACTFEL phosphors into the green region of the spectrum via the incorporation of alkali metal ions into the SrS lattice. Alkali metals are incorporated into SrS:Cu,F phosphors by using LiF, NaF, KF, RbF, or CsF coactivators. The best result to date is obtained by using a KF coactivator and results in a saturated green brightness and efficiency of 52.7 cd/m2 and 0.973 lm/W (at a frequency of 60 Hz and an overvoltage of 40 V). In addition to providing a color shift, the alkali-metal fluorides improve the overall performance of the ACTFEL device by increasing the magnitude of the electric field and its uniformity across the phosphor through suppression of positive space charge. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.60.Pg Display systems
78.60.Fi Electroluminescence
78.66.Nk Insulators

Antisite defects of Bi2Te3 thin films

Sunglae Cho, Yunki Kim, Antonio DiVenere, George K. Wong, John B. Ketterson, and Jerry R. Meyer

Appl. Phys. Lett. 75, 1401 (1999); http://dx.doi.org/10.1063/1.124707 (3 pages) | Cited 34 times

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We have successfully grown Bi2Te3 thin films on CdTe(111)B using molecular-beam epitaxy. Structural and transport properties have been investigated using in situ reflection high-energy electron diffraction, θ–2θ x-ray diffraction analysis, thermopower, and Hall measurements. Both the crystallinity and the transport are found to be strongly affected by nonstoichiometry. The most stoichiometric sample had a high crystallinity, high thermopower, and high electron mobility. However, Bi2Te3 films with excess Te had a reduced lattice constant, poorer crystallinity, reduced magnitude of the thermopower, and reduced mobility. All of these observations can be explained in terms of antisite defects in which excess Te occupies Bi lattice sites and behaves as a n-type dopant. © 1999 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Le Other inorganic semiconductors
61.72.J- Point defects and defect clusters
73.50.Lw Thermoelectric effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
61.66.Bi Elemental solids
61.66.Dk Alloys
73.50.Dn Low-field transport and mobility; piezoresistance

Metal diffusion from electrodes in organic light-emitting diodes

S. T. Lee, Z. Q. Gao, and L. S. Hung

Appl. Phys. Lett. 75, 1404 (1999); http://dx.doi.org/10.1063/1.124708 (3 pages) | Cited 117 times

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Metal diffusion from magnesium–silver cathodes and indium–tin–oxide anodes in organic light-emitting diodes has been investigated. Magnesium showed no substantial diffusion under device operation and had no significant effects on luminance decay with operation time. Indium was immobile in storage at room temperature, while indium penetration into organic layers was observed after device operation. The presence of indium in organic films showed a correlation with performance degradation. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
66.30.J- Diffusion of impurities
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
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