APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

13 Sep 1999

Volume 75, Issue 11, pp. 1491-1646

Return to All Sections
back to top
RSS Feeds

High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

Y. S. Lin, W. C. Hsu, C. H. Wu, W. Lin, and R. T. Hsu

Appl. Phys. Lett. 75, 1616 (1999); http://dx.doi.org/10.1063/1.124772 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor has been successfully fabricated by metalorganic chemical-vapor deposition. Improved electron mobility as high as 5410 (19 200) cm2/V s at 300 (77) K along with turn-on voltage as high as 2.3 V and reverse gate-to-drain voltage up to 75 V are achieved. These characteristics are attributed to the use of the δ-doped, undoped InGaP Schottky layer, and undoped GaAs setback layer. Moreover, the parasitic parallel conduction can be eliminated. The activation energy is also deduced. © 1999 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.20.Fr Low-field transport and mobility; piezoresistance
81.05.Ea III-V semiconductors

Ion-beam-induced surface damages on tris-(8-hydroxyquinoline) aluminum

L. S. Liao, L. S. Hung, W. C. Chan, X. M. Ding, T. K. Sham, I. Bello, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 75, 1619 (1999); http://dx.doi.org/10.1063/1.124773 (3 pages) | Cited 41 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Surface damage of tris-(8-hydroxyquinoline) aluminum (Alq3) film by 100 eV Ar+ irradiation has been studied by using both x-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). XPS core level electron density curves revealed that some N–Al and C–O–Al bonds in Alq3 molecules were broken by the irradiation. Correspondingly, the valence band structure of the Alq3 molecule, as measured by UPS, was tremendously changed. The highest occupied state extended towards the Fermi level (EF), implying that a metal-like conducting surface was formed. This kind of damaged surface would cause nonradiative quenching in an electroluminescence device when electrons are injected from the cathode into the Alq3 layer, and possibly result in electrical shorts. © 1999 American Institute of Physics.
Show PACS
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
61.82.Pv Polymers, organic compounds
79.60.Dp Adsorbed layers and thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
61.50.Lt Crystal binding; cohesive energy
73.20.At Surface states, band structure, electron density of states
73.20.Hb Impurity and defect levels; energy states of adsorbed species

2e2/h to e2/h switching of quantum conductance associated with a change in nanoscale ferromagnetic domain structure

Teruo Ono, Yutaka Ooka, Hideki Miyajima, and Yoshichika Otani

Appl. Phys. Lett. 75, 1622 (1999); http://dx.doi.org/10.1063/1.124774 (3 pages) | Cited 87 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the electrical conductance quantization in a Ni nanowire formed in a break junction between a ferromagnetic Ni wire and a Ni plate in applied magnetic fields. The conductance of the nanowire is clearly quantized in units of 2e2/h in a zero magnetic field, but it is switched to e2/h by applying magnetic fields above 60 Oe. This switching behavior seems closely related to a ferromagnetic domain formation in the vicinity of a nanowire, suggesting that nanoscale magnetic domain walls play an important role in determining nanoscale spin-dependent transport. The effect offers the possibility of a new device, a nanoscale colossal magnetoresistive sensor. © 1999 American Institute of Physics.
Show PACS
73.23.-b Electronic transport in mesoscopic systems
75.50.Cc Other ferromagnetic metals and alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ch Domain walls and domain structure
75.70.Kw Domain structure (including magnetic bubbles and vortices)
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.60.+g Mixed conductivity and conductivity transitions
75.50.Kj Amorphous and quasicrystalline magnetic materials

Experimental demonstration of electrically controllable photonic crystals at centimeter wavelengths

A. de Lustrac, F. Gadot, S. Cabaret, J.-M. Lourtioz, T. Brillat, A. Priou, and E. Akmansoy

Appl. Phys. Lett. 75, 1625 (1999); http://dx.doi.org/10.1063/1.124775 (3 pages) | Cited 25 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electrically controllable photonic crystals have been fabricated by inserting p-i-n diodes in two-dimensional metallic lattices. A first structure uses a square lattice of thin and discontinuous metallic wires. A second structure is fabricated using stacks of printed circuits with metallic strips. The p-i-n diodes are soldered along the different metallic wires or strips. The crystals have been characterized between 1 and 20 GHz. We show that they can be operated as wideband switchable electromagnetic windows with high transmission or reflection contrast between on and off states. A ∼ 25 dB transmission modulation is reported within the first transmission band of a two-period crystal. We also show that the switching domain and modulation rate can be varied with a separate bias control for each crystal plane. Finally, the distance between crystal planes is used to tune the operating frequency range. © 1999 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
85.60.-q Optoelectronic devices
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.30.Kk Junction diodes
41.20.Jb Electromagnetic wave propagation; radiowave propagation

The cause of the anomalously small electric field effect in thin films of Bi

A. V. Butenko, Dm. Shvarts, V. Sandomirsky, and Y. Schlesinger

Appl. Phys. Lett. 75, 1628 (1999); http://dx.doi.org/10.1063/1.124776 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Measurements of the electric field effect (EFE) in thin films of Bi exhibit an unexpectedly small effect. Even though the additional charge density is comparable with the intrinsic carrier concentration, the measured EFE is minute. We show that this can be attributed to the following facts: (1) The additional charge due to EFE is divided between the electron and hole bands correspondingly to the density-of-states (DOS). The Bi film is in the quantum-size regime, thus the carriers DOS depend linearly on the corresponding effective masses of DOS. (2) The nature of the scattering mechanism is such that the ratio of the carrier mobilities is almost equal to the inverse ratio of the corresponding effective masses. This near equality is the cause of the anomalous EFE in Bi films. © 1999 American Institute of Physics.
Show PACS
73.61.Le Other inorganic semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Ps Other inorganic compounds
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close