APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

13 Sep 1999

Volume 75, Issue 11, pp. 1491-1646

Return to All Sections
back to top
RSS Feeds

Dielectric properties of C60 films in the high-temperature region

J. S. Su, Y. F. Chen, and K. C. Chiu

Appl. Phys. Lett. 75, 1607 (1999); http://dx.doi.org/10.1063/1.124769 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Capacitance and dissipation factor measurements of the dielectric properties on C60 thin films are performed at a temperature between 275 and 470 K. A Debye-like relaxation in the dielectric response has been observed, and the relaxation rate is thermally activated with an energy of about 467 meV which is different from the value 277 meV obtained at a temperature below 260 K. Remarkably, both the capacitance and dissipation factor curves as a function of temperature have a pronounced feature at 435 K. It confirms the fact that above 400 K a phase transition does occur in the C60 crystal except for that detected around 260 K. We interpreted the phase transition at 435 K in terms of the disappearance of one of the spherical harmonics Ylm that describe the orientational density distribution of the C60 molecules. © 1999 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
64.70.K- Solid-solid transitions
68.55.Nq Composition and phase identification
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

Domain imaging and local piezoelectric properties of the (200)-predominant SrBi2Ta2O9 thin film

G. D. Hu, J. B. Xu, and I. H. Wilson

Appl. Phys. Lett. 75, 1610 (1999); http://dx.doi.org/10.1063/1.124770 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The domain structure of the (200)-predominant SrBi2Ta2O9 (SBT) thin film was detected by an atomic force microscope in the piezoelectric mode. It was found that the content of the grains split by single domain walls is less than 5%. The types of domain walls formed in individual grains were identified by analyzing the dependence of piezoelectric coefficient (d33) on the alternating current driving electric field. Several grains larger than 300 nm were found to be split by non-180° domain walls. To study the switching properties, the (200)-predominant SBT thin film was polarized and imaged over a large area. Unswitchable grains cannot be observed both in the area polarized using +8 V and in the region polarized using −8 V. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.65.Bn Piezoelectric and electrostrictive constants
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization

Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates

Si-Bei Xiong and Shigeki Sakai

Appl. Phys. Lett. 75, 1613 (1999); http://dx.doi.org/10.1063/1.124771 (3 pages) | Cited 29 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We prepared SrBi2Ta2O9(SBT) ferroelectric thin films on SiO2/Si and on MgO buffered SiO2/Si substrates using laser ablation, in situ annealing and postannealing, and observed retention time longer than 7 days. On SiO2/Si substrates, only the samples annealed at 800 °C occasionally exhibited good memory properties. On MgO buffered SiO2/Si substrates, successful probability for finding good measuring dots increased largely even while postannealing temperature was as low as 650 °C; their typical memory window was 3.1 V and retention time over 7 days without serious degradation. The MgO buffer layer inserted between SBT and SiO2/Si may play three positive roles on the quality of metal–ferroelectric–insulator–semiconductor structure: preventing bismuth loss, lowering crystallization temperature, and decreasing leakage current. © 1999 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.15.Fg Pulsed laser ablation deposition
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close