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13 Sep 1999

Volume 75, Issue 11, pp. 1491-1646

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Nanofabrication using a stencil mask

Mandar M. Deshmukh, D. C. Ralph, M. Thomas, and J. Silcox

Appl. Phys. Lett. 75, 1631 (1999); http://dx.doi.org/10.1063/1.124777 (3 pages) | Cited 67 times

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We describe tests of a technique to fabricate nanostructures by the evaporation of metal through a stencil mask etched in a suspended silicon nitride membrane. Collimated evaporation through the mask gives metal dots less than 15 nm in diameter and lines 15–20 nm wide. We have investigated the extent of hole clogging and the factors which determine the ultimate resolution of the technique. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
85.40.Hp Lithography, masks and pattern transfer
85.40.Ls Metallization, contacts, interconnects; device isolation
81.65.Cf Surface cleaning, etching, patterning
85.40.Sz Deposition technology
81.05.Bx Metals, semimetals, and alloys

Origin of yield problems of single electron devices based on evaporated granular films

H.-O. Müller, M. Boero, J. K. Vincent, J. C. Inkson, H. Mizuta, and P. A. Mulheran

Appl. Phys. Lett. 75, 1634 (1999); http://dx.doi.org/10.1063/1.124778 (3 pages)

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An evaporated nanometer scale granular film provides a simple system for studying Coulomb blockade effects. This technique has often been used during the last few decades. However with respect to potential devices, specific problems continue to obstruct broader application. It is virtually impossible to observe Coulomb blockade in one–dimensional structures, and even for wide two–dimensional systems the yield is frustratingly low. We study these problems using a comprehensive theoretical framework that enables us to model both the growth aspects, and the electrical characteristics. In particular, we study how the morphology of the islands influences their electrical properties. Explanations for the observed behavior are put forward. © 1999 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Ds Quantum interference devices
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Rm Porous materials; granular materials
73.61.At Metal and metallic alloys
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Dual integrated actuators for extended range high speed atomic force microscopy

T. Sulchek, S. C. Minne, J. D. Adams, D. A. Fletcher, A. Atalar, C. F. Quate, and D. M. Adderton

Appl. Phys. Lett. 75, 1637 (1999); http://dx.doi.org/10.1063/1.124779 (3 pages) | Cited 26 times

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A flexible system for increasing the throughput of the atomic force microscope without sacrificing imaging range is presented. The system is based on a nested feedback loop which controls a micromachined cantilever that contains both an integrated piezoelectric actuator and an integrated thermal actuator. This combination enables high speed imaging (2 mm/s) over an extended range by utilizing the piezoelectric actuator’s high bandwidth (15 kHz) and thermal actuator’s large response (300 nm/V). A constant force image, where the sample topography exceeds the range of the piezoelectric actuator alone, is presented. It has also been demonstrated that the deflection response of the thermal actuator can be linearized and controlled with an integrated diode. © 1999 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Atomic steps with tuning-fork-based noncontact atomic force microscopy

W. H. J. Rensen, N. F. van Hulst, A. G. T. Ruiter, and P. E. West

Appl. Phys. Lett. 75, 1640 (1999); http://dx.doi.org/10.1063/1.124780 (3 pages) | Cited 43 times

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Tuning forks as tip–sample distance detectors are a promising and versatile alternative to conventional cantilevers with optical beam deflection in noncontact atomic force microscopy (AFM). Both theory and experiments are presented to make a comparison between conventional and tuning-fork-based AFM. Measurements made on a Si(111) sample show that both techniques are capable of detecting monatomic steps. The measured step height of 0.33 nm is in agreement with the accepted value of 0.314 nm. According to a simple model, interaction forces of 30 pN are obtained for the tuning-fork-based setup, indicating that, at the proper experimental conditions, the sensitivity of such an instrument is competitive to conventional lever-based AFM. © 1999 American Institute of Physics.
Show PACS
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Lh Atomic force microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.10.-h Mechanical instruments and equipment

A mesoscopic terahertz pulse detector

P. Orellana and F. Claro

Appl. Phys. Lett. 75, 1643 (1999); http://dx.doi.org/10.1063/1.124781 (3 pages) | Cited 8 times

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We show that under the passage of an electromagnetic terahertz pulse an asymmetric double-barrier device may act as an on/off current switch, depending on the bias. The time-dependent response of the device is discussed. © 1999 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.23.-b Electronic transport in mesoscopic systems
85.35.Ds Quantum interference devices
84.40.-x Radiowave and microwave (including millimeter wave) technology
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