APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

13 Sep 1999

Volume 75, Issue 11, pp. 1491-1646

Return to All Sections
back to top
RSS Feeds

1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation

H. König, S. Rennon, J. P. Reithmaier, A. Forchel, J. L. Gentner, and L. Goldstein

Appl. Phys. Lett. 75, 1491 (1999); http://dx.doi.org/10.1063/1.124732 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Complex coupled GaInAsP/InP distributed feedback lasers were developed based on maskless focused ion beam lithography. By combining implantation enhanced wet chemical etching and implantation induced thermal quantum well intermixing a refractive index grating was defined self-aligned to a gain grating forming a complex coupled grating lateral to a ridge waveguide. The devices show single mode emission at wavelengths around 1.55 μm with linewidths <2 MHz and side mode suppression ratios of more than 40 dB for continuous wave operation at room temperature. A high single mode yield (>90%) over a large tuning range (88 nm) was achieved. © 1999 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.79.Dj Gratings
42.86.+b Optical workshop techniques
81.65.Cf Surface cleaning, etching, patterning
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.60.Fc Modulation, tuning, and mode locking
42.60.Pk Continuous operation

Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

Chuong A. Tran, A. Osinski, R. F. Karlicek, and I. Berishev

Appl. Phys. Lett. 75, 1494 (1999); http://dx.doi.org/10.1063/1.124733 (3 pages) | Cited 69 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the growth of InGaN/GaN multiple-quantum-well blue light-emitting diode (LED) structures on Si(111) using metalorganic vapor phase epitaxy. By using growth conditions optimized for sapphire substrates, a full width at half maximum (FWHM) (102) x-ray rocking curve of less than 600 arcsec and a room-temperature photoluminescence peak at 465 nm with a FWHM of 35 nm was obtained. Simple LEDs emitting bright electroluminescence between 450 and 480 nm with turn-on voltages at 5 V were demonstrated. © 1999 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.60.Fi Electroluminescence
78.55.Cr III-V semiconductors

Photonic band engineering through tailored microstructural order

John Ballato, Jeffrey Dimaio, Andrew James, and Eric Gulliver

Appl. Phys. Lett. 75, 1497 (1999); http://dx.doi.org/10.1063/1.124734 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Colloidal solids of monosized, solution-derived SiO2 were prepared under forced and unforced sedimentation conditions to tailor the level of particulate order. Photonic band gaps were observed in the blue part of the visible spectrum and their spectral shape is shown experimentally to correlate directly to the degree of long- and short-range particulate order. These results are discussed by analogy to the x-ray diffraction of crystals and glasses as is the practical applicability of “photonic glasses” with respect to the more widely studied “photonic crystals.” © 1999 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
82.70.Dd Colloids
42.50.-p Quantum optics
78.40.Ha Other nonmetallic inorganics

Precise control of 1.55 μm vertical-cavity surface-emitting laser structure with InAlGaAs/InAlAs Bragg reflectors by in situ growth monitoring

Jong-Hyeob Baek, In Hoon Choi, Bun Lee, Won Seok Han, and Hyung Koun Cho

Appl. Phys. Lett. 75, 1500 (1999); http://dx.doi.org/10.1063/1.124735 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The vertical-cavity surface-emitting laser (VCSEL) structure designed at 1.55 μm was grown by a low-pressure metalorganic chemical vapor deposition method. In situ laser reflectometry, using both 0.633 and 1.53 μm wavelengths simultaneously, was employed to control the exact optical thickness over the whole growth time. The distributed Bragg reflectors (DBRs) were grown with alternate In0.53Al0.13Ga0.34As and In0.52Al0.48As λ/4 wavelength layers. The oscillatory reflection signals obtained by the monitoring laser at 1.53 μm gave information for designing the center wavelength of the DBR. The reflectance spectrum of the VCSEL structure showed an excellent square shaped wide flatband (greater than 90 nm) where the reflectivity reached a plateau as expected by the in situ monitoring data. © 1999 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Identification of the intrinsic self-trapped hole center in KD2PO4

K. T. Stevens, N. Y. Garces, L. E. Halliburton, M. Yan, N. P. Zaitseva, J. J. DeYoreo, G. C. Catella, and J. R. Luken

Appl. Phys. Lett. 75, 1503 (1999); http://dx.doi.org/10.1063/1.124736 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The intrinsic “self-trapped” hole center in KD2PO4 crystals has been identified using electron paramagnetic resonance and electron-nuclear double resonance. These defects, labeled [D2PO4]o centers, can be formed at 77 K by irradiating with either 60 kV x rays or the fourth harmonic (266 nm) of a pulsed Nd:YAG laser. The hole is equally shared by two adjacent oxygen ions, and hyperfine interactions with one phosphorus and two equivalent deuterons are observed. The sample used in this investigation was approximately 80% deuterated, thus both [D2PO4]o and [HDPO4]o centers were detected, with the former being dominant. These intrinsic self-trapped hole centers are of interest because of their potential role in the transient optical absorption produced in KD2PO4 crystals at room temperature by intense 266 nm laser pulses. © 1999 American Institute of Physics.
Show PACS
71.55.Ht Other nonmetals
76.30.Mi Color centers and other defects
76.70.Dx Electron-nuclear double resonance (ENDOR), electron double resonance (ELDOR)
61.80.Cb X-ray effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.J- Point defects and defect clusters

Photothermal fixation of laser-trapped polymer microparticles on polymer substrates

Jaihyung Won, Takanori Inaba, Hiroshi Masuhara, Hideki Fujiwara, Keiji Sasaki, Shigeru Miyawaki, and Setsuya Sato

Appl. Phys. Lett. 75, 1506 (1999); http://dx.doi.org/10.1063/1.124737 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photothermal fixation of polymer microparticles onto a polymer substrate is demonstrated by using a laser manipulation technique. Individual microparticles were sequentially trapped by a 1064 nm Nd3+:yttrium–aluminum–garnet (YAG) laser light and pressed on a polymer substrate. Dye molecules that are doped into a substrate or dissolved into a solvent absorb the second harmonic pulse of a Nd3+:YAG laser and convert the absorbed light to thermal energy. It is considered that the local temperature elevation led to the local melting of the microparticle and substrate, resulting in mutual adhesion. The processes and microfixation conditions are presented, and the mechanism is discussed. © 1999 American Institute of Physics.
Show PACS
37.10.Vz Mechanical effects of light on atoms, molecules, and ions
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.62.-b Laser applications
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Electrically tunable, room-temperature quantum-cascade lasers

Antoine Müller, Mattias Beck, Jérôme Faist, Ursula Oesterle, and Marc Ilegems

Appl. Phys. Lett. 75, 1509 (1999); http://dx.doi.org/10.1063/1.124738 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electrical tuning of two-section quantum-cascade lasers is systematically investigated as a function of temperature and optical power. In pulsed operation, the active region design exhibits a low threshold current density (5.2 kA/cm2), a high peak (100 mW), and average (3 mW) powers at 300 K. The strong linear Stark tuning of the laser transition allows large tuning ranges of 40 cm−1, corresponding to a wavelength tune from 9.75 to 10.15 μm at 260 K for a peak optical output power of 10 mW. The tuning range is still 20 cm−1 at the same optical output power at T = 300 K. © 1999 American Institute of Physics.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.20.Jq Electro-optical effects

Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers

Shigeaki Sekiguchi, Tomoyuki Miyamoto, Tadayoshi Kimura, Fumio Koyama, and Kenichi Iga

Appl. Phys. Lett. 75, 1512 (1999); http://dx.doi.org/10.1063/1.124739 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose a current confinement structure which can be self-formed by thermal annealing of a electrode metal with a self-aligning process. The migrated metal selectively destroys an AlAs/InP tunnel junction to form a high resistance isolation layer. The hole current can be injected through a preserved tunnel junction window. We confirmed its lateral confinement effect from the near-field pattern of fabricated GaInAsP/InP stripe lasers. The proposed current confinement structure is very simple and useful for the lateral injection in semiconductor optical devices including long-wavelength vertical-cavity surface-emitting lasers. © 1999 American Institute of Physics.
Show PACS
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
61.72.Cc Kinetics of defect formation and annealing
42.86.+b Optical workshop techniques

High-power laser light source for near-field optics and its application to high-density optical data storage

Afshin Partovi, David Peale, Matthias Wuttig, Cherry A. Murray, George Zydzik, Leslie Hopkins, Kirk Baldwin, William S. Hobson, James Wynn, John Lopata, Lisa Dhar, Rob Chichester, and James H-J Yeh

Appl. Phys. Lett. 75, 1515 (1999); http://dx.doi.org/10.1063/1.124740 (3 pages) | Cited 77 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A laser light source for high-resolution near-field optics applications with an output power exceeding 1 mW (104 times the power from previous sources) and small (300 nm square to less than 50 nm square) output beam size is demonstrated. The very-small-aperture laser (VSAL) tremendously expands the range of applications possible with near-field optics and increases the signal-to-noise ratios and data rates obtained in existing applications. As an example, 250-nm-diam marks corresponding to 7.5 Gb/in.2 storage density have been recorded and read back in reflection and transmission on a rewritable phase-change disk at 24 Mb/s with a 250-nm-square aperture VSAL. VSALs potentially enable data storage densities of over 500 Gb/in.2 (up to 100 times today’s magnetic or optical storage densities). © 1999 American Institute of Physics.
Show PACS
42.79.Vb Optical storage systems, optical disks
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
07.79.Fc Near-field scanning optical microscopes
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close