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13 Sep 1999

Volume 75, Issue 11, pp. 1491-1646

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Polaron dissociation in conducting polymers by high electric fields

S. V. Rakhmanova and E. M. Conwell

Appl. Phys. Lett. 75, 1518 (1999); http://dx.doi.org/10.1063/1.124741 (3 pages) | Cited 42 times

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It has been accepted that addition of an electron or hole to a conducting polymer chain causes the chain to distort, creating a large polaron. We show, by numerical solution of the coupled equations for the electron wave functions and the lattice displacements on a polyacetylene chain with an extra electron, that the polaron does not form in electric fields ≥ 6×104 V/cm. In fields ≥ 106 V/cm, an already formed polaron will be dissociated. Implications for current versus voltage of a light-emitting diode at high fields will be discussed. © 1999 American Institute of Physics.
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71.38.-k Polarons and electron-phonon interactions
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
72.80.Le Polymers; organic compounds (including organic semiconductors)
42.70.Jk Polymers and organics
85.60.Jb Light-emitting devices

Metal–organic atomic-layer deposition of titanium–silicon–nitride films

Jae-Sik Min, Hyung-Sang Park, and Sang-Won Kang

Appl. Phys. Lett. 75, 1521 (1999); http://dx.doi.org/10.1063/1.124742 (3 pages) | Cited 23 times

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Titanium–silicon–nitride films were grown by metal–organic atomic-layer deposition at 180 °C. When silane was supplied separately in the sequence of a tetrakis(dimethylamido) titanium pulse, silane pulse, and ammonia pulse, the Si content in the deposited films and the deposition thickness per cycle remained almost constant at 18 at. % and 0.22 nm/cycle, even though the silane partial pressure varied from 0.27 to 13.3 Pa. Especially, the Si content dependence is strikingly different from the conventional chemical-vapor deposition. The capacitance–voltage measurement revealed that the Ti–Si–N film prevents the diffusion of Cu up to 800 °C for 60 min. Step coverage was approximately 100% even on the 0.3 μm diam hole with slightly negative slope and 10:1 aspect ratio. © 1999 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Resonantly enhanced Raman scattering and high-order Raman spectra of single-walled carbon nanotubes

PingHeng Tan, Yan Tang, Yuan Ming Deng, Feng Li, Yong Liang Wei, and Hui Ming Cheng

Appl. Phys. Lett. 75, 1524 (1999); http://dx.doi.org/10.1063/1.124743 (3 pages)

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The Raman spectra of single-walled carbon nanotubes (SWNTs) produced by the catalytic decomposition of hydrocarbons have been measured in the range of 100–7500 cm−1. The tangential C–C stretching modes show an unusual resonant enhancement process that results from the one-dimensional quantum confinement of the electrons in the SWNT, and its intensity of the tangential C–C stretching mode is about 100 times as strong as that of highly oriented pyrolytic graphite. Because of the resonant enhancement, high-order Raman bands up to fifth order have been revealed and assigned to the corresponding fundamentals. © 1999 American Institute of Physics.
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78.30.Na Fullerenes and related materials
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
63.20.-e Phonons in crystal lattices

Size effect on the superconducting transition of embedded lead particles in an Al–Cu–V amorphous matrix

A. P. Tsai, N. Chandrasekhar, and K. Chattopadhyay

Appl. Phys. Lett. 75, 1527 (1999); http://dx.doi.org/10.1063/1.124744 (2 pages) | Cited 17 times

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We have synthesized specimens of nanometric lead dispersion in a glassy Al–Cu–V matrix by rapid solidification of the corresponding melt. The microstructure has been designed to avoid superconducting percolation due to coupling of the neighboring particles by the proximity effect. Using these specimens, we have determined quantitatively the effect of size of the ultrafine lead particles on the superconducting transition. © 1999 American Institute of Physics.
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74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
64.70.D- Solid-liquid transitions
81.30.Fb Solidification
74.50.+r Tunneling phenomena; Josephson effects
61.46.-w Structure of nanoscale materials
61.43.Fs Glasses

Waveguide luminescence and Raman spectroscopy: Characterization of an inhomogeneous film at different depths

M. Ferrari, M. Montagna, S. Ronchin, F. Rossi, and G. C. Righini

Appl. Phys. Lett. 75, 1529 (1999); http://dx.doi.org/10.1063/1.124745 (3 pages) | Cited 8 times

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In graded-index planar optical waveguides, different guided modes propagate in layers with different thickness. By comparison of spectra (Raman, luminescence) taken by waveguide excitation in different modes, it is possible to characterize the guide at different depths. The method has been applied to waveguides obtained by ion exchange of silver in a soda-lime substrate. Luminescence from silver ions and Raman scattering from the optical vibrations of the glass and from the acoustic vibrations of silver nanoclusters depend on the silver concentration, providing different spectra for excitation in different modes of the guide. © 1999 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.70.Ce Glasses, quartz
78.55.Hx Other solid inorganic materials
78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.79.Ry Gradient-index (GRIN) devices
63.50.-x Vibrational states in disordered systems

Nonlinear optical properties of a coherent array of submicron SiO2 spheres (opal) embedded with Si nanoparticles

M. Ajgaonkar, Y. Zhang, H. Grebel, and C. W. White

Appl. Phys. Lett. 75, 1532 (1999); http://dx.doi.org/10.1063/1.124746 (3 pages) | Cited 18 times

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The optical properties of a coherent array of 300 nm SiO2 spheres implanted with Si ions were shown to change nonlinearly with light intensity. These changes have been attributed to transverse confinement of the optical beam within the opal structure. © 1999 American Institute of Physics.
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42.65.-k Nonlinear optics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Jg Amorphous semiconductors; glasses
61.46.-w Structure of nanoscale materials

Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy

Walter Hansch, Anri Nakajima, and Shin Yokoyama

Appl. Phys. Lett. 75, 1535 (1999); http://dx.doi.org/10.1063/1.124747 (3 pages) | Cited 9 times

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Core-level intensities for Si 2p, Si 2s, O 1s, and N 1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal–oxide–semiconductor field-effect transistor fabrication. © 1999 American Institute of Physics.
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79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.55.-a Thin film structure and morphology
61.66.Bi Elemental solids
61.66.Dk Alloys

Excitons bound to nitrogen clusters in GaAsN

S. Francoeur, S. A. Nikishin, C. Jin, Y. Qiu, and H. Temkin

Appl. Phys. Lett. 75, 1538 (1999); http://dx.doi.org/10.1063/1.124748 (3 pages) | Cited 52 times

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We studied the photoluminescence from GaAsN/GaAs, with the nitrogen content of less than 0.5%. The low-temperature photoluminescence spectra are composed of several excitons bound to nitrogen complexes, each associated with different composition or configuration. These features were studied as a function of the excitation intensity, temperature, concentration, and growth conditions. The dependence of the binding energy of the dominant recombination center on the nitrogen concentration is interpreted in terms of a hierarchy of nitrogen complexes, from centers composed of at least two nitrogen atoms to more extended clusters. These excitonic transitions are very sensitive to growth parameters and can be used to study the statistical distribution of nitrogen in nominally uniform layers. We also show that the transition from nitrogen doping to alloy formation occurs for nitrogen concentrations above 0.25%. © 1999 American Institute of Physics.
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71.35.-y Excitons and related phenomena
71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals

Electrochromic coloration efficiency of a-WO3−y thin films as a function of oxygen deficiency

Se-Hee Lee, Hyeonsik M. Cheong, C. Edwin Tracy, Angelo Mascarenhas, A. W. Czanderna, and Satyen K. Deb

Appl. Phys. Lett. 75, 1541 (1999); http://dx.doi.org/10.1063/1.124782 (3 pages) | Cited 55 times

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We report on how electrochromic coloration is affected by oxygen deficient stoichiometries in sputtered amorphous tungsten oxide (a-WO3−y) films. The electrochromic coloration efficiency increases with increasing oxygen deficiency in (a-WO3−y) films. No coloration is observed in nearly stoichiometric WO3 films. Raman spectroscopic studies reveal that the number of W5+ states generated with lithium insertion increases with the oxygen deficiency. Furthermore, there are no Raman peaks resulting from W5+ states in lithiated a-WO3−y films with near perfect stoichiometry, which is consistent with the absence of electrochromic coloration in those films. We conclude that the coloration efficiency of a-WO3−y films depends on the number of the W5+ states generated by lithium insertion and that the oxygen deficiency plays an important role in generating the W5+ states with lithium insertion. © 1999 American Institute of Physics.
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78.20.Jq Electro-optical effects
78.66.Jg Amorphous semiconductors; glasses
68.55.Nq Composition and phase identification
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Boron retarded self-interstitial diffusion in Czochralski growth of silicon crystals and its role in oxidation-induced stacking-fault ring dynamics

Talid Sinno, Hendi Susanto, Robert A. Brown, Wilfried von Ammon, and Erich Dornberger

Appl. Phys. Lett. 75, 1544 (1999); http://dx.doi.org/10.1063/1.124749 (3 pages) | Cited 4 times

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The effect of boron doping on the position of the oxidation-induced stacking-fault ring (OSF ring) during Czochralski (CZ) crystal growth is described using a comprehensive model for point defect dynamics including the role of boron. The important interactions between boron atoms and intrinsic point defects are selected on the basis of tight-binding estimates for the energies of formation for boron-point defect structures. Intrinsic point defect properties used are taken from a parameterized model of point defect dynamics for predicting OSF-ring dynamics. Entropies of formation for boron-point defect species are obtained by fitting the predictions of the model to experimental data for OSF-ring dynamics. The model successfully predicts OSF-ring dynamics for a variety of doping and growth conditions. The effect of boron on the OSF ring is caused by the retardation of point defect recombination at temperatures near the melting point caused by dynamic storage of self-interstitials in complexes with boron. © 1999 American Institute of Physics.
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81.10.Fq Growth from melts; zone melting and refining
61.72.Yx Interaction between different crystal defects; gettering effect
81.05.Cy Elemental semiconductors
61.72.J- Point defects and defect clusters
66.30.H- Self-diffusion and ionic conduction in nonmetals
61.72.Nn Stacking faults and other planar or extended defects
82.60.Cx Enthalpies of combustion, reaction, and formation
65.20.-w Thermal properties of liquids
65.40.gd Entropy

Nonlinear optical properties of self-organized complex oxide Ce:BaTiO3 quantum dots grown by pulsed laser deposition

Wensheng Shi, Zhenghao Chen, Ningning Liu, Huibin Lu, Yueliang Zhou, Dafu Cui, and Guozhen Yang

Appl. Phys. Lett. 75, 1547 (1999); http://dx.doi.org/10.1063/1.124750 (3 pages) | Cited 25 times

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Ordered self-organized complex oxide Ce:BaTiO3 quantum dots shaped as a pyramid with a square base were fabricated by pulsed laser deposition. The density of the quantum dots was about 140 μm−2. The nonlinear optical properties were determined by the single beam Z scan method at a wavelength of 0.532 μm with a laser duration of 10 ns. The nonlinear refractive indices of the wetting layer and the self-organized ordered quantum dots were 8.87×10−8 and 6.39×10−7 esu, respectively. The mechanisms of the nonlinear effect enhancement for these low-dimensional structures are discussed. © 1999 American Institute of Physics.
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42.65.-k Nonlinear optics
78.66.Nk Insulators
42.70.Mp Nonlinear optical crystals
81.15.Fg Pulsed laser ablation deposition
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Substitution sites of Pb and Y in Bi2Sr2Ca1Cu2O8+δ: X-ray photoelectron diffraction as fingerprinting tool

Th. Pillo, J. Hayoz, P. Schwaller, H. Berger, P. Aebi, and L. Schlapbach

Appl. Phys. Lett. 75, 1550 (1999); http://dx.doi.org/10.1063/1.124751 (3 pages) | Cited 1 time

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The substitution site of Y and Pb in the cuprate-type high temperature superconductor Bi2Sr2Ca1Cu2O8+δ is determined in a very direct and unambiguous way by means of angle-scanned x-ray photoelectron diffraction (XPD). Using XPD as a fingerprinting tool, we conclude that Y occupies the Ca sites and Pb the Bi sites, respectively. Furthermore, low-energy electron diffraction data unequivocally show the presence of the incommensurate lattice modulation which is known for pure Bi2212, but not for sufficiently Pb doped Bi2212. We can, therefore, attribute the reappearance of the modulation directly to the Y doping. © 1999 American Institute of Physics.
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61.66.Fn Inorganic compounds
74.72.-h Cuprate superconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.05.js X-ray photoelectron diffraction
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