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27 Sep 1999

Volume 75, Issue 13, pp. 1821-1987

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Low-leakage-current metal–insulator–semiconductor–insulator–metal photodetector on silicon with a SiO2 barrier-enhancement layer

M. Seto, C. Rochefort, S. de Jager, R. F. M. Hendriks, G. W. ’t Hooft, and M. B. van der Mark

Appl. Phys. Lett. 75, 1976 (1999); http://dx.doi.org/10.1063/1.124890 (3 pages) | Cited 5 times

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Show Abstract
We show that the leakage current through a metal–semiconductor–metal photodetector can be reduced by placing a thin interfacial silicon dioxide layer between the Schottky metal and the silicon substrate. We measure a factor 5.2 reduction in leakage-current density to 18 μA/cm2 at 5 V, a weaker increase in dark current with bias, and a factor 3.5 improvement in photoresponsivity to 0.39 A/W. We do not observe any noticeable reduction in device speed using this interfacial oxide. © 1999 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.65.Mq Oxidation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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