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27 Sep 1999

Volume 75, Issue 13, pp. 1821-1987

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The ferroelectricity of perovskite-type oxides with alkylamine interlayer

Zhaohui Zhong, Weiping Ding, Yi Chen, Xiaoyuan Chen, Yongyuan Zhu, and Naiben Min

Appl. Phys. Lett. 75, 1958 (1999); http://dx.doi.org/10.1063/1.124884 (3 pages) | Cited 6 times

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The ferroelectricity of layer perovskite-type oxides intermittent with alkylamine, synthesized by hydrothermal method, has been reported. Ferroelectric hysteresis loops were observed in these newly synthesized powder crystals, which were pressed into wafers with platinum electrodes deposited by a pulsed laser. Element analysis shows 69% cations between two layers were exchanged into alkyl ammonium. X-ray powder diffraction pattern, infrared spectra, Raman spectra, and electron microscopy were used to characterize the samples. The results show that perovskite layer contributes to the ferroelectric property. So-synthesized samples may make up a new group of materials with potential use especially in the field of fatigue-free ferroelectricity. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
78.30.-j Infrared and Raman spectra
77.80.Fm Switching phenomena
81.10.Dn Growth from solutions

Structure determination of a planar defect in SrBi2Ta2O9

Y. Yan, M. M. Al-Jassim, Z. Xu, X. Lu, D. Viehland, M. Payne, and S. J. Pennycook

Appl. Phys. Lett. 75, 1961 (1999); http://dx.doi.org/10.1063/1.124885 (3 pages) | Cited 9 times

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The atomic structure of a planar defect with a (001) habit plane in single crystal layered perovskite SrBi2Ta2O9 is determined by high-resolution Z-contrast imaging. We found that the defect forms a structure, with two Sr–Ta–O perovskite blocks connected by a metallic Sr2 plane, rather than a Bi2O2 layer as in the perfect crystal. This defect is expected to be an efficient hole trap and may have important implications for the electronic properties and the ferroelectric response of the SrBi2Ta2O9 material. © 1999 American Institute of Physics.
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61.72.Nn Stacking faults and other planar or extended defects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
71.55.Ht Other nonmetals
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

The dependence of electron emission on ferroelectric properties of Pb(ZrxTi1−x)O3

Yong Tae Kim, Ki Hyun Yoon, Tae Heui Kim, and Kyung Bong Park

Appl. Phys. Lett. 75, 1964 (1999); http://dx.doi.org/10.1063/1.124886 (3 pages) | Cited 7 times

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The characteristics of pulse electric field induced electron emission from the Pb(ZrxTi1−x)O3 ceramics have been investigated with a particular emphasis on the relationship to the ferroelectric properties. The emission charge of the negative pulse field to the rear electrode was smaller and more stable than that of the positive field. The emission threshold field and the emission charge were indeed affected by the coercive field and polarization change. However, the emission properties were minimally affected by the dielectric constant. The emission charge increased exponentially with the pulse field and polarization change. The electron emission can be regarded as a field emission by polarization change. © 1999 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena

High dielectric constant Hf–Sn–Ti–O thin films

L. F. Schneemeyer, R. B. van Dover, and R. M. Fleming

Appl. Phys. Lett. 75, 1967 (1999); http://dx.doi.org/10.1063/1.124887 (3 pages) | Cited 33 times

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High dielectric constant Hf–Sn–Ti–O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250 °C have excellent dielectric properties: 40–70-nm-thick films with a dielectric constant of 40–60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9–17 fF/μm2. Breakdown fields were measured to be about 3–4 MV/cm, yielding a figure of merit ϵϵ0Ebr ∼ 19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10−7−10−6 A/cm2. © 1999 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Jp Dielectric breakdown and space-charge effects
81.15.Cd Deposition by sputtering

Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

Katsuyuki Ishikawa and Hiroshi Funakubo

Appl. Phys. Lett. 75, 1970 (1999); http://dx.doi.org/10.1063/1.124888 (3 pages) | Cited 47 times

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(001)- and (116)-oriented epitaxial SrBi2Ta2O9 (SBT) thin films were deposited on (100)SrRuO3∥(100)SrTiO3 substrates at 750 °C and (110)SrRuO3∥(110)SrTiO3 substrates at 820 °C by metalorganic chemical vapor deposition, respectively. The remanent polarization and the coercive field of the 200-nm-thick (116)-oriented SBT films normal to the substrate were 11.4 μC/cm2 and 80 kV/cm, respectively. The dielectric constant of this film was 140 at 1 kHz. On the other hand, the 200-nm-thick (001)-oriented SrBi2Ta2O9 films normal to the substrate showed no ferroelectricity and the dielectric constant was 70 at 1 kHz. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.Fm Switching phenomena

Film formation by motion control of ionized precursors in electric field

Motoaki Adachi, Toshiyuki Fujimoto, Koichi Nakaso, Kikuo Okuyama, Frank G. Shi, Hideki Sato, Toshio Ando, and Hideki Tomioka

Appl. Phys. Lett. 75, 1973 (1999); http://dx.doi.org/10.1063/1.124889 (3 pages) | Cited 8 times

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A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O3 films deposited on SiN and SiO2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm−1 was different between ionized intermediates and nonionized intermediates. © 1999 American Institute of Physics.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.30.-j Infrared and Raman spectra
68.35.B- Structure of clean surfaces (and surface reconstruction)
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