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27 Sep 1999

Volume 75, Issue 13, pp. 1821-1987

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Persistent photoconductivity in Ga1−xInxNyAs1−y

J. Z. Li, J. Y. Lin, H. X. Jiang, J. F. Geisz, and Sarah R. Kurtz

Appl. Phys. Lett. 75, 1899 (1999); http://dx.doi.org/10.1063/1.124865 (3 pages) | Cited 23 times

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Electrical properties of unintentionally doped p-type Ga0.95In0.05N0.013As0.987 quaternary alloys grown by metal–organic vapor-phase epitaxy have been investigated by Hall-effect and photoconductivity measurements. Persistent photoconductivity (PPC) has been observed in this material at temperatures T<320 K. The PPC buildup and decay kinetics have been systematically measured at different temperatures and photoexcitation energies and formulated in the context of lattice-relaxed deep levels (or AX-like centers). The parameters which characterize the AX centers in GaInNAs, namely, the thermal and optical ionization energies, hole capture barrier, and the Stokes shift, have been determined. Our results indicate that AX-like deep levels strongly influence the electronic properties of the GaInNAs quaternary system. © 1999 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Metal/fluorinated-dielectric interactions in microelectronic interconnections: Rapid diffusion of fluorine through aluminum

S. E. Kim and Ch. Steinbrüchel

Appl. Phys. Lett. 75, 1902 (1999); http://dx.doi.org/10.1063/1.124866 (3 pages) | Cited 6 times

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Rather surprising behavior has been observed when aluminum (Al) is in contact with fluorine-doped silicon dioxide (FSG). With Al deposited onto FSG, x-ray photoelectron spectroscopy shows that there is only a very minor reaction at the interface, producing a small amount of AlF3. No fluorine is observed in the bulk of the Al film, but fluorine diffuses readily through the Al even at room temperature and reacts at the free metal surface. On the other hand, with FSG deposited onto Al, the native aluminum oxide provides quite good protection against fluorine diffusion. By contrast, when pure Cu is in contact with FSG, there is almost no interaction or fluorine diffusion. Various approaches to reducing fluorine diffusion into a metal are also discussed, including using a diffusion barrier (TiN, Ta, TaN) or a suitable plasma treatment of the FSG before metal deposition. © 1999 American Institute of Physics.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
73.40.Ns Metal-nonmetal contacts
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
61.72.Cc Kinetics of defect formation and annealing

Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)

O. G. Schmidt, C. Lange, and K. Eberl

Appl. Phys. Lett. 75, 1905 (1999); http://dx.doi.org/10.1063/1.124867 (3 pages) | Cited 73 times

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Stranski–Krastanov growth of Ge on Si(001) can result in various different types of islands such as domes, pyramids, and hut clusters. A systematic study of the impact of the different island phases on photoluminescence (PL) spectra is presented and reveals simultaneous PL from the wetting layer and islands in the pyramids/domes phase and only island related PL in the phase of hut clusters. A rather abrupt transformation from pyramids/domes to hut clusters is reported by changing the growth temperature from 600 to 580 °C. The wetting layer and island related energy transitions as a function of Ge coverage are presented for growth temperatures ranging from 360 to 700 °C. At Ts = 360 °C no island formation is present. The influence of Oswald ripening and material interdiffusion on the PL properties is discussed. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
81.05.Cy Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation

High-Q wet-etched GaAs microdisks containing InAs quantum boxes

B. Gayral, J. M. Gérard, A. Lemaître, C. Dupuis, L. Manin, and J. L. Pelouard

Appl. Phys. Lett. 75, 1908 (1999); http://dx.doi.org/10.1063/1.124894 (3 pages) | Cited 109 times

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A two-steps wet-etching fabrication process producing high-quality GaAs microdisks is presented. We report an optical characterization of these microdisks, using the photoluminescence of InAs quantum boxes as an internal light source. Thanks to an improved smoothness of the microdisk sidewall, cavity Q’s as high as 12 000 are observed, which opens very challenging novel application prospects for semiconductor microdisks. © 1999 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning

Interpretation of electrical and galvanomagnetic properties of diamond monocrystals

K. Somogyi

Appl. Phys. Lett. 75, 1911 (1999); http://dx.doi.org/10.1063/1.124868 (3 pages) | Cited 2 times

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An exponential type description of the temperature dependence of hole mobility and the experimentally observed mobility maxima reveal that activation energies obtained from the temperature dependence of the resistivity and that of the hole concentration differ from each other in a range from 0.03 to 0.08 eV for diamond monocrystals. This difference is too high to be simply neglected. On the other hand, the existence of a mobility maximum and of a steep high temperature slope on the temperature dependence of mobility is explained here solely by the dominance of the ionized impurity scattering. © 1999 American Institute of Physics.
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72.80.Cw Elemental semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Dp General theory, scattering mechanisms

Band-gap control of GaInP using Sb as a surfactant

J. K. Shurtleff, R. T. Lee, C. M. Fetzer, and G. B. Stringfellow

Appl. Phys. Lett. 75, 1914 (1999); http://dx.doi.org/10.1063/1.124869 (3 pages) | Cited 36 times

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The use of surfactants to control specific aspects of the vapor-phase epitaxial growth process is beginning to be studied for both the elemental and III/V semiconductors. To date, most reported surfactant effects for semiconductors relate to the morphology of the growing films. However, semiconductor alloys with CuPt ordering exhibit much more dramatic effects. The change in the CuPt order parameter induced by the surfactant translates into a marked change in the band-gap energy. Previous work concentrated on the effects of the donor tellurium. Te is less than ideal as a surfactant, since the change in band-gap energy is coupled to a large change in the conductivity. This letter presents the results of a study of the effects of an isoelectronic surfactant on the ordering process in GaInP. Sb has been found to act as a surfactant during organometallic vapor-phase epitaxial growth. At an estimated Sb concentration in the solid of 1×10−4, order is eliminated, as indicated by the band-gap energy. Surface photoabsorption (SPA) data indicate that the effect is due to a change in the surface reconstruction. Adding Sb leads to attenuation of the peak at 400 nm in the SPA spectrum associated with [math10] P dimers. The addition of Sb during the growth cycle has been used to produce a heterostructure with a 135 meV band-gap difference between two layers with the same solid composition. © 1999 American Institute of Physics.
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71.20.Nr Semiconductor compounds
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
68.35.Md Surface thermodynamics, surface energies
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electrical isolation of a silicon δ-doped layer in GaAs by ion irradiation

I. Danilov, J. P. de Souza, H. Boudinov, A. V. Murel, V. M. Daniltsev, and V. I. Shashkin

Appl. Phys. Lett. 75, 1917 (1999); http://dx.doi.org/10.1063/1.124870 (3 pages) | Cited 2 times

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The electrical isolation of a n-type δ-doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the δ-doped layer was found to be ≈ 2 times higher than that predicted for thick doped layers of similar carrier concentration. The thermal stability of the isolation, i.e., the persistence of sheet resistance Rs at values >109Ω/□ after subsequent thermal annealing, is limited to temperatures below 400 °C. This temperature limit for the thermal stability Tsm is markedly lower than those observed in wider doped layers in which Tsm is ≅ 650 °C. A previously isolated δ-doped layer presents p-type conductivity after annealing at temperatures >600 °C . © 1999 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
73.61.Ey III-V semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing
68.60.Dv Thermal stability; thermal effects

Fabrication of ohmic contacts to buried diamond layers using Pt layer in the diamond chemical-vapor-deposition process

Chunlei Wang and Toshimichi Ito

Appl. Phys. Lett. 75, 1920 (1999); http://dx.doi.org/10.1063/1.124871 (3 pages) | Cited 1 time

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Electrical contacts to a buried chemical-vapor-deposited (CVD) diamond layer can be accomplished using a process in which Pt columns automatically grow from the buried layer to the diamond surface by diamond overgrown on a thin Pt film. Hall effect measurements were employed in a temperature region from room temperature to 450 °C to investigate and compare transport properties of a buried B-doped homoepitaxial diamond film with such Pt column electrodes before and after the overgrowth of the upper layer. A useful ohmic contact to the B-doped CVD diamond interlayer was formed by this type of buried electrodes. © 1999 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.05.ub Fullerenes and related materials

Implantation-induced amorphization of InP characterized with perturbed angular correlation

E. Bezakova, A. P. Byrne, C. J. Glover, M. C. Ridgway, and R. Vianden

Appl. Phys. Lett. 75, 1923 (1999); http://dx.doi.org/10.1063/1.124872 (3 pages) | Cited 7 times

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The perturbed angular correlation (PAC) technique has been used to characterize the implantation-induced crystalline-to-amorphous transformation in InP. Radioactive 111In probes were first introduced in InP substrates which were then irradiated with Ge ions over an ion-dose range extending 2 orders of magnitude beyond that required for amorphization. Crystalline, disordered and amorphous probe environments were subsequently identified with PAC. The dose dependence of the relative fractions of the individual probe environments were determined, a direct amorphization process consistent with the overlap model was quantified and evidence for a second amorphization process via the overlap of disordered regions was observed. Given the ability to differentiate disordered and amorphous probe environments, a greater effective resolution was achieved with the PAC technique compared with other common analytical methodologies. © 1999 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
76.80.+y Mössbauer effect; other γ-ray spectroscopy
61.43.Dq Amorphous semiconductors, metals, and alloys

Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul’nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Yu. M. Shernyakov, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg

Appl. Phys. Lett. 75, 1926 (1999); http://dx.doi.org/10.1063/1.124873 (3 pages) | Cited 62 times

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An InAs quantum dot (QD) array covered by a thin InGaAs layer was used as the active region of diode lasers grown by molecular beam epitaxy on GaAs substrates. The wavelength of the ground-state transition in such heterostructures is in the 1.3 μm range. In the laser based on the single layer of QDs, lasing proceeds via the excited states due to insufficient gain of the ground level. Stacking of three QD planes prevents gain saturation and results in a low threshold (85 A/cm2 in broad-area 1.9-mm-long stripe) long-wavelength (1.25 μm) lasing at room temperature via the QD ground state with relatively high differential efficiency (>50%). © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Photoluminescence linewidths of piezoelectric quantum wells

E. A. Khoo, J. P. R. David, J. Woodhead, R. Grey, and G. J. Rees

Appl. Phys. Lett. 75, 1929 (1999); http://dx.doi.org/10.1063/1.124874 (3 pages) | Cited 5 times

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The photoluminescence linewidths of strained InxGa1−xAs/GaAs quantum wells grown on (111)B GaAs substrates are shown to differ radically from those grown on (001) substrates. In (111)B structures, the linewidth in wide wells is broadened significantly compared with (001) structures. This broadening cannot be explained by well width or alloy fluctuations alone, and suggests the presence of another mechanism which we believe is due to the piezoelectric field and its sensitivity to screening under illumination. © 1999 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
77.65.Ly Strain-induced piezoelectric fields
78.20.Jq Electro-optical effects

Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells

Hongtao Jiang and Jasprit Singh

Appl. Phys. Lett. 75, 1932 (1999); http://dx.doi.org/10.1063/1.124875 (3 pages) | Cited 11 times

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A strong piezoelectric effect and large lattice mismatch allow one to incorporate high built-in electric fields in InGaN/GaN quantum wells. This letter examines the implications of these fields on the absorption spectra and refractive index changes induced by an external perpendicular electric field. We find that InGaN/GaN quantum wells show linear electro-optic effect due to quantum confined Stark effect. Our results suggest application of InGaN/GaN quantum wells in Mach–Zehnder type modulators and in electroabsorption modulators in the blue light region. © 1999 American Institute of Physics.
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78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
77.65.Ly Strain-induced piezoelectric fields
78.30.Fs III-V and II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Hp Optical processors, correlators, and modulators

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Peter Ramvall, Satoru Tanaka, Shintaro Nomura, Philippe Riblet, and Yoshinobu Aoyagi

Appl. Phys. Lett. 75, 1935 (1999); http://dx.doi.org/10.1063/1.124876 (3 pages) | Cited 7 times

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We report on an investigation of the coupling between excitons and longitudinal optical phonons as a function of GaN quantum dot size. Photoluminescence measurements of the quantum dots from cryogenic temperatures up to above room temperature are presented. The experiments were performed on ensembles of AlN capped GaN quantum dots grown on an Al0.15Ga0.85N surface by means of metalorganic vapor phase epitaxy. The results are analyzed on the basis of a Bose–Einstein-type expression describing the exciton to longitudinal optical phonon coupling of the dots as a function of the lattice temperature. A reduction of the exciton to LO-phonon coupling with decreasing quantum dot size was found. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
63.20.kk Phonon interactions with other quasiparticles
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
71.35.-y Excitons and related phenomena

Evidence from scanning tunneling microscopy in support of a structural model for the InSb(001)-c(8×2) surface

A. A. Davis, R. G. Jones, G. Falkenberg, L. Seehofer, R. L. Johnson, and C. F. McConville

Appl. Phys. Lett. 75, 1938 (1999); http://dx.doi.org/10.1063/1.124877 (3 pages) | Cited 8 times

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In this letter we present evidence from scanning tunneling microscopy studies in support of a recently proposed structural model for the indium-terminated c(8×2) surface of InSb(001). This structural model, by Norris and co-workers, is based on a surface x-ray diffraction study [Surf. Sci. 409, 27 (1998)], and represents a significant departure from previously suggested models for the c(8×2) reconstruction on any (001) surface of the common III–V semiconductor materials. Although filled state images of the InSb(001)-c(8×2) surface have previously been published, empty states image of sufficient quality to extract any meaningful information have not previously been reported. The observations are in excellent agreement with the recently proposed model for this surface reconstruction. © 1999 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
73.20.At Surface states, band structure, electron density of states
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