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27 Sep 1999

Volume 75, Issue 13, pp. 1821-1987

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A continuous-wave tunable solid-state blue laser based on intracavity sum-frequency mixing and pump-wavelength tuning

C. Q. Wang, Y. T. Chow, W. A. Gambling, D. R. Yuan, D. Xu, G. H. Zhang, and M. H. Jiang

Appl. Phys. Lett. 75, 1821 (1999); http://dx.doi.org/10.1063/1.124839 (3 pages) | Cited 2 times

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We report on continuous-wave tunable blue-light generation from a Nd:Y3Al15O12 laser by intracavity sum-frequency mixing of its fundamental laser line at 946 nm with the pump light from a tunable Ti:sapphire laser by use of cadmium–mercury–thiocyanate nonlinear crystal. The tunable range of the blue light was 434.4–437.5 nm, and the maximum output power at 436 nm was measured to be 310 μW. © 1999 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Mp Nonlinear optical crystals
42.60.By Design of specific laser systems

Scanning near-field optical spectroscopy and imaging using nanofabricated probes

H. Zhou, A. Midha, G. Mills, L. Donaldson, and J. M. R. Weaver

Appl. Phys. Lett. 75, 1824 (1999); http://dx.doi.org/10.1063/1.124840 (3 pages) | Cited 12 times

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We have designed and constructed a scanning near-field optical microscopy (SNOM) system which is based on batch-fabricated aperture probes fabricated using micromachining and direct-write electron-beam lithography. The aperture is situated at the hollow tip apex of a modified silicon nitride atomic force microscope (AFM) cantilever. The SNOM/AFM probes are used both for excitation and collection of luminescence due to their excellent optical efficiency. The integration of a cantilever with the aperture allows better control of the aperture–sample distance and also results in considerable simplification of the SNOM system. Using this system, we have obtained near-field luminescence spectra and imaging of GaAs/AlGaAs quantum wires and wells, and have demonstrated spectrally resolved luminescence imaging with a spatial resolution of ∼ 50 nm. © 1999 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
07.10.Cm Micromechanical devices and systems
07.60.Rd Visible and ultraviolet spectrometers
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
07.79.Lh Atomic force microscopes

Blue-green variable light-emitting diode based on organic–molecule-doped polymer

Chunxiang Xu, Yiping Cui, Yingzhong Shen, Hongwei Gu, Yi Pan, and Yinkui Li

Appl. Phys. Lett. 75, 1827 (1999); http://dx.doi.org/10.1063/1.124841 (3 pages) | Cited 16 times

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Monolayer organic light-emitting diodes based on the organic molecule [(3,4-dimethoxybenzyldehycle-2′-hydroxy naphthylimine)dimethyl gallium]-doped [poly(2-mehtyoxy-5-ethyloxy)-4-di-(2-methyoxy-5′-octaoxy)phenylene vinylene] have been fabricated by a spin-coating method. Color variation from green to blue has been observed. The results have been attributed to the variation of the recombination zone and the charge transfer between the materials. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
85.60.Pg Display systems

Raman scattering enhancement in porous silicon microcavity

L. A. Kuzik, V. A. Yakovlev, and G. Mattei

Appl. Phys. Lett. 75, 1830 (1999); http://dx.doi.org/10.1063/1.124842 (3 pages) | Cited 16 times

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We have measured an enhancement factor of Raman signal up to 30 times using a Fabry-Pérot structure made of porous silicon (PS) layers of different porosity. The obtained enhancement was due to the coupling of the laser radiation and Stokes photons of porous silicon with the microcavity mode at the optimal laser beam incidence and scattering angles. Our results provide a way to increase the sensitivity of Raman spectroscopy for studying the species inside porous silicon which can considerably influence the properties of this material and hence of PS based devices. © 1999 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.79.-e Optical elements, devices, and systems

Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write

L. C. Chao, B. K. Lee, C. J. Chi, J. Cheng, I. Chyr, and A. J. Steckl

Appl. Phys. Lett. 75, 1833 (1999); http://dx.doi.org/10.1063/1.124843 (3 pages) | Cited 6 times

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Upconversion luminescence has been obtained from Er-implanted GaN films by focused-ion-beam (FIB) direct write. FIB implantation was performed on GaN films grown by molecular beam epitaxy, hydride vapor phase epitaxy, and metalorganic chemical vapor deposition. After implantation, the GaN samples were annealed at 1100 °C for 1 h in various ambients (Ar, N2, and O2). Strong green upconversion was observed at 523 and 546 nm under red (840 nm) and infrared (1.0 μm) excitation. Upconversion intensity was measured for Er doses ranging from 4.3×1012 to 2.4×1016 atoms/cm2. Maximum upconversion intensity at 546 nm was observed at a dose of 1–2×1015 atoms/cm2, which corresponds to an atomic percentage of 0.3%–0.6%. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates

Wenquan Ma, Richard Nötzel, Manfred Ramsteiner, Uwe Jahn, Hans-Peter Schönherr, Helmar Kostial, and Klaus H. Ploog

Appl. Phys. Lett. 75, 1836 (1999); http://dx.doi.org/10.1063/1.124844 (3 pages) | Cited 1 time

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A p-i-n light-emitting diode (LED) with a single stack of sidewall quantum wires in the center of the intrinsic region has been fabricated by molecular-beam epitaxy on patterned GaAs (311)A substrates with all-Si n- and p-type doping. For small injection currents, the electroluminescence (EL) measured at low temperatures solely originates from the quantum wires without emission from the surrounding quantum wells within the patterned LED of 220 μm diameter. The selectivity of the EL emission is gradually reduced with increasing temperature, but the emission intensity per unit area in the wire regions is still two orders of magnitude larger than that in the well regions at room temperature. A model based on the lateral diffusion of injected electrons and holes is proposed to explain the selective carrier injection into the quantum wires. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence

Effects of broad-waveguide structure in 0.8 μm high-power InGaAsP/InGaP/AlGaAs lasers

T. Hayakawa, M. Wada, F. Yamanaka, H. Asano, T. Kuniyasu, T. Ohgoh, and T. Fukunaga

Appl. Phys. Lett. 75, 1839 (1999); http://dx.doi.org/10.1063/1.124845 (3 pages) | Cited 5 times

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Systematic study on the effects of the waveguide thickness Wg has been carried out for 200-μm-wide stripe separate-confinement-heterostructure lasers in the range of Wg = 0.22–1.2 μm while the width of single quantum well is kept constant at 10 nm. The internal loss αi is reduced from 1.7 to 1 cm−1 when Wg is increased from 0.22 to 1.2 μm. It is shown that αi is not determined by the free-carrier absorption of clad layers, but primarily by Γ, the optical confinement factor, most probably due to scattering at the quantum well/waveguide interfaces. The external differential quantum efficiency ηd monotonically increases with Wg for pulsed operation. By contrast, ηd is maximum at Wg = 0.8 μm for continuous-wave (cw) operation. Both the threshold carrier density and the threshold temperature sensitivity increases with Wg for Wg ≥ 0.8 μm, which decreases ηd in cw operation. When 200-μm-wide devices (20%/97% coated) were life tested at 2 W and 30 °C, the median degradation rate shows a minimal value of 3×10−6 h−1 at Wg = 0.8 μm, which is 7 times smaller than that at Wg = 0.22 μm. The facet temperature measured by the modulation reflectance is also minimized at Wg = 0.8 μm. In broad-waveguide lasers with increasing Wg, the increase in carrier overflow competes with the reduction of optical power density, and thus self-absorption in the quantum well, which determines the optimal Wg. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Diameter modification of silicon nanowires by ambient gas

Y. F. Zhang, Y. H. Tang, H. Y. Peng, N. Wang, C. S. Lee, I. Bello, and S. T. Lee

Appl. Phys. Lett. 75, 1842 (1999); http://dx.doi.org/10.1063/1.124846 (3 pages) | Cited 42 times

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Si nanowires (SINWs) with different diameters have been synthesized by laser ablation in different ambient gases. SINWs with the diameter distribution peaks at ∼ 13.2 and ∼ 9.5 nm have been obtained respectively in He and Ar (5% H2). SINWs produced in N2 had the smallest peak diameter at 6 nm, and are mixed in with some spherical particles with diameters ranging from ∼ 9 nm to several hundreds nm. Elements from the ambient gas were not detected in the SINWs. SINWs produced in Ar(5% H2) and N2 atmospheres exhibited photoluminescence and spectral blue-shift with diameter reduction, which are attributable to two-dimensional quantum confinement effects in crystalline nanowires. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
78.66.Jg Amorphous semiconductors; glasses
81.15.Fg Pulsed laser ablation deposition
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
81.05.Cy Elemental semiconductors

Third-order nonlinear optical properties of didodecyldimethylammonium–Au(dmit)2

Shufeng Wang, Wentao Huang, Tieqiao Zhang, Hong Yang, Qihuang Gong, Yoshihito Okuma, Masashi Horikiri, and Yasuhiro F. Miura

Appl. Phys. Lett. 75, 1845 (1999); http://dx.doi.org/10.1063/1.124847 (3 pages) | Cited 45 times

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The third-order optical nonlinearity of metal(dmit)2 was investigated with femtosecond optical Kerr effect at 830 nm wavelength. The nonresonant second-order hyperpolarizability for the didodecyldimethylammonium–Au(dmit)2 (2C12–Au) molecule was estimated to be as large as 2.2×10−32 esu. © 1999 American Institute of Physics.
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42.70.Jk Polymers and organics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.An Optical susceptibility, hyperpolarizability
33.15.Kr Electric and magnetic moments (and derivatives), polarizability, and magnetic susceptibility

Band gap and wave guiding effect in a quasiperiodic photonic crystal

Chongjun Jin, Bingying Cheng, Baoyuan Man, Zhaolin Li, Daozhong Zhang, Shouzheng Ban, and Bo Sun

Appl. Phys. Lett. 75, 1848 (1999); http://dx.doi.org/10.1063/1.124848 (3 pages) | Cited 88 times

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A two-dimensional octagonal quasiperiodic photonic crystal composed of alumina cylinders is prepared. The transmission spectra of the quasicrystal are measured in the microwave region for the TM wave. We find that the position and width of the band gap do not depend on the incident direction, while the band structure can appear for quite a small piece of the quasicrystal. Two types of waveguide, a straight guide and a bending guide with two sharp 90° corners, are fabricated by removing three rows of cylinders. The measured transmittances show that the guiding efficiency for both waveguides is high. © 1999 American Institute of Physics.
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78.70.Gq Microwave and radio-frequency interactions
42.70.Qs Photonic bandgap materials
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