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11 Oct 1999

Volume 75, Issue 15, pp. 2163-2335

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Increase in response time of low-temperature-grown GaAs photoconductive switches at high voltage bias

N. Zamdmer, Qing Hu, K. A. McIntosh, and S. Verghese

Appl. Phys. Lett. 75, 2313 (1999); http://dx.doi.org/10.1063/1.125008 (3 pages) | Cited 47 times

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The response time of photoconductive submillimeter-wave emitters based on low-temperature-grown (LTG) GaAs is known to increase at high applied bias, which limits the output power of these devices at frequencies near 1 THz. We performed measurements of an LTG GaAs photoconductor embedded in a coplanar waveguide with both static and dynamic illumination to investigate the increase in response time and an increase in direct-current photoconductance that occurs at the same bias voltages. We attribute both phenomena to a reduction of the electron capture cross section of donor states due to electron heating and Coulomb-barrier lowering. We discuss why the phenomena cannot be explained by space-charge-limited current or other injection-limited currents, or by impact ionization. © 1999 American Institute of Physics.
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85.60.-q Optoelectronic devices
81.05.Ea III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects
72.30.+q High-frequency effects; plasma effects

Two-stage amplifier based on a double relaxation oscillation superconducting quantum interference device

M. Podt, M. J. van Duuren, A. W. Hamster, J. Flokstra, and H. Rogalla

Appl. Phys. Lett. 75, 2316 (1999); http://dx.doi.org/10.1063/1.125001 (3 pages) | Cited 13 times

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A low-noise single-chip two-stage superconducting quantum interference device (SQUID) system with a double relaxation oscillation SQUID as the second stage has been realized. The system was operated in a direct voltage readout mode, with a closed loop bandwidth up to 1 MHz. Operated at 4.2 K, the white flux noise measured in flux locked loop was 1.3 μΦ0/√Hz, corresponding to an energy sensitivity of ϵ ≈ 27h. Owing to the large flux-to-voltage transfer of up to 3.6 mV/Φ0, the room-temperature preamplifier noise did not dominate the overall flux noise. © 1999 American Institute of Physics.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.30.Le Amplifiers

Observation of metal–oxide–semiconductor transistor operation using scanning capacitance microscopy

C. Y. Nakakura, D. L. Hetherington, M. R. Shaneyfelt, P. J. Shea, and A. N. Erickson

Appl. Phys. Lett. 75, 2319 (1999); http://dx.doi.org/10.1063/1.125002 (3 pages) | Cited 23 times

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We report scanning capacitance microscopy (SCM) images of a working p-channel metal–oxide–semiconductor field-effect transistor (P-MOSFET) during device operation. Independent bias voltages were applied to the source/gate/drain/well regions of the MOSFET during SCM imaging, and the effect of these voltages on the SCM images is discussed. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
07.79.-v Scanning probe microscopes and components
85.30.De Semiconductor-device characterization, design, and modeling

Improved spectrometric performance of CdTe radiation detectors in a p-i-n design

Madan Niraula, Daisuke Mochizuki, Toru Aoki, Yoshinori Hatanaka, Yasuhiro Tomita, and Tokuaki Nihashi

Appl. Phys. Lett. 75, 2322 (1999); http://dx.doi.org/10.1063/1.125003 (3 pages) | Cited 7 times

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CdTe radiation detectors were fabricated using a p-i-n design and a significant improvement in the spectral properties was obtained during room temperature operation. An iodine doped n-CdTe layer was grown on the Te faces of the (111) oriented high resistivity CdTe crystals at the low substrate temperature of 150 °C. An aluminum electrode was evaporated on the n-CdTe side for the n-type contact, while a gold electrode on the opposite side acted as the p-type contact. Very low leakage currents, typically 60 pA/mm2, were attained at room temperature (25 °C) for an applied reverse bias of 250 V. Detectors exhibited excellent spectral responses with an energy resolution of 1.42, 1.7, and 4.2 keV FWHM at 59.5, 122, and 662 keV γ peaks, respectively. © 1999 American Institute of Physics.
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29.40.Wk Solid-state detectors
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Polar-optical-phonon induced nonlinearity at semiconductor interfaces

B. L. Gelmont and D. L. Woolard

Appl. Phys. Lett. 75, 2325 (1999); http://dx.doi.org/10.1063/1.125004 (3 pages)

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The dynamical behavior of GaAs-based Schottky-diode interfaces near the polar-optical-phonon (POP) resonance frequency is addressed. The manifestation of a tetrahertz-regime coupling mechanism between the temporal evolution of the diode barrier and POPs is revealed. Specifically, POPs are shown to perturb the spatial dependence of the displacement field within the depletion region and strongly enhance the nonlinearity associated with diode current. This resonance coupling emerges in the unscreened barrier region and leads to dramatic nonlinear effects on both the resistive (i.e., emission particle transport) and the reactive (displacement transport) physics. This strong and highly localized frequency-space phenomenon has broad implications to all polarsemiconductor-based heterostructure devices that utilize nonlinear electron transport effects. © 1999 American Institute of Physics.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes
71.38.-k Polarons and electron-phonon interactions
63.20.K- Phonon interactions
72.20.Ht High-field and nonlinear effects
85.30.De Semiconductor-device characterization, design, and modeling
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