A low-voltage, low-capacitance, field emitter array (FEA) electron source has been developed for applications such as field emitter displays, high-voltage switches, and high frequency power amplifiers. The FEA cell has a horizontal gate and a vertical edge emitter made by sandwiching a low-work-function lithium dispenser thin film between two ruthenium films. We measured a low turn-on voltage (several nanoamps at 27 V) and high collected current (16 μA at 62 V) from 1 to 3 cells. Based on chemical beam deposition, the fabrication method allows all the FEA cell dimensions to be independently adjustable. Our FEA has many potential advantages in performance such as low capacitance, low voltage, high transconductance, high current, and resistance to oxidation and to erosion by back-ion bombardment. Furthermore, much lower manufacturing cost should result from the significantly fewer processing steps.