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18 Oct 1999

Volume 75, Issue 16, pp. 2347-2507

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Possible cooling by resonant Fowler-Nordheim emission

Alexander N. Korotkov and Konstantin K. Likharev

Appl. Phys. Lett. 75, 2491 (1999); http://dx.doi.org/10.1063/1.125058 (3 pages) | Cited 26 times

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A method of electronic refrigeration based on resonant Fowler-Nordheim emission is analyzed. In this method, a bulk emitter is covered with a-few-nm-thick film of a widegap semiconductor, creating an intermediate step between electron energies in the emitter and in vacuum. An external electric field tilts this potential profile, forming a quantum well at the semiconductor-vacuum boundary. Alignment of its lowest two-dimensional subband with the energy of the hottest electrons of the emitter (a few kBT above the Fermi level) leads to a resonant, selective emission of these electrons, providing emitter cooling. Calculations show that cooling power of at least 30 W/cm2, and temperatures down to 10 K may be achieved using this effect. © 1999 American Institute of Physics.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
79.40.+z Thermionic emission
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.-r Electrical properties of specific thin films
73.23.-b Electronic transport in mesoscopic systems

Conductance spikes in single-walled carbon nanotube field-effect transistor

Kun Liu, Marko Burghard, Siegmar Roth, and Partrick Bernier

Appl. Phys. Lett. 75, 2494 (1999); http://dx.doi.org/10.1063/1.125059 (3 pages) | Cited 18 times

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Nanoscale field-effect transistor (FET) has been fabricated from single-walled carbon nanotubes (CNTs). At ∼5 K, the transistor shows pronounced field effect. Most interestingly, reproducible spikes are observed in the channel conductance as a function of the gate voltage. These conductance spikes are attributed to van Hove singularities in the electronic density of states in the carbon nanotubes. Based on the observation of these conductance spikes, a mechanism is proposed for the charge transport in CNT FETs. © 1999 American Institute of Physics.
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85.65.+h Molecular electronic devices
85.30.Tv Field effect devices
73.61.Wp Fullerenes and related materials
71.20.Tx Fullerenes and related materials; intercalation compounds
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