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18 Oct 1999

Volume 75, Issue 16, pp. 2347-2507

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In situ video observation of 180° domain kinetics in congruent LiNbO3 crystals

Venkatraman Gopalan, Q. X. Jia, and T. E. Mitchell

Appl. Phys. Lett. 75, 2482 (1999); http://dx.doi.org/10.1063/1.125055 (3 pages) | Cited 42 times

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We report in situ observation of the nucleation and growth of ferroelectric 180° domains in congruent LiNbO3 crystals. The domains nucleate and grow as six-sided polygons. The wall velocity measured at a constant field shows a spike-like behavior with time, suggesting a strong pinning–depinning type of growth mechanism. This behavior is similar to the corresponding transient current measurement which also shows current spikes during domain reversal. © 1999 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis

Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1−xTixO3 (x = 0–0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si

C. H. Lin, S. W. Lee, Haydn Chen, and T. B. Wu

Appl. Phys. Lett. 75, 2485 (1999); http://dx.doi.org/10.1063/1.125056 (3 pages) | Cited 7 times

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Highly (100) textured Pb(ScTa)1−xTixO3 (x = 0–0.3) thin films were grown on LaNiO3/Pt/Ti electrode-coated Si substrate using metal-organic chemical vapor deposition at 685 °C. Ti addition was introduced to modify the dielectric properties. Diffuse phase transition, typical of relaxor ferroelectrics was noticed. As Ti content increased from 0% to 30%, the phase transition temperature (Tmax) gradually shifted from −10 to 120 °C with the dielectric constant at Tmax increased from 1397 to 1992 (1 kHz). Loss tangent values are generally below 0.025. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

High-displacement spiral piezoelectric actuators

F. Mohammadi, A. L. Kholkin, B. Jadidian, and A. Safari

Appl. Phys. Lett. 75, 2488 (1999); http://dx.doi.org/10.1063/1.125057 (3 pages) | Cited 15 times

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A high-displacement piezoelectric actuator, employing spiral geometry of a curved piezoelectric strip is described. The monolithic actuators are fabricated using a layered manufacturing technique, fused deposition of ceramics, which is capable of prototyping electroceramic components with complex shapes. The spiral actuators (2–3 cm in diameter) consisted of 4–5 turns of a lead zirconate titanate ceramic strip with an effective length up to 28 cm. The width was varied from 0.9 to 1.75 mm with a height of 3 mm. When driven by the electric field applied across the width of the spiral wall, the tip of the actuator was found to displace in both radial and tangential directions. The tangential displacement of the tip was about 210 μm under the field of 5 kV/cm. Both the displacement and resonant frequency of the spirals could be tailored by changing the effective length and wall width. The blocking force of the actuator in tangential direction was about 1 N under the field of 5 kV/cm. These properties are advantageous for high-displacement low-force applications where bimorph or monomorph actuators are currently employed. © 1999 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.65.-j Piezoelectricity and electromechanical effects
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