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18 Oct 1999

Volume 75, Issue 16, pp. 2347-2507

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A low-voltage, low-capacitance, vertical ruthenium–lithium–ruthenium sandwich layer thin-film-edge dispenser field emitter electron source

David S. Y. Hsu and Henry F. Gray

Appl. Phys. Lett. 75, 2497 (1999); http://dx.doi.org/10.1063/1.125060 (3 pages) | Cited 2 times

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A low-voltage, low-capacitance, field emitter array (FEA) electron source has been developed for applications such as field emitter displays, high-voltage switches, and high frequency power amplifiers. The FEA cell has a horizontal gate and a vertical edge emitter made by sandwiching a low-work-function lithium dispenser thin film between two ruthenium films. We measured a low turn-on voltage (several nanoamps at 27 V) and high collected current (16 μA at 62 V) from 1 to 3 cells. Based on chemical beam deposition, the fabrication method allows all the FEA cell dimensions to be independently adjustable. Our FEA has many potential advantages in performance such as low capacitance, low voltage, high transconductance, high current, and resistance to oxidation and to erosion by back-ion bombardment. Furthermore, much lower manufacturing cost should result from the significantly fewer processing steps.
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07.77.Ka Charged-particle beam sources and detectors
85.45.Db Field emitters and arrays, cold electron emitters

An adjustable oxide-free tunnel junction for vibrational spectroscopy of molecules

Darin T. Zimmerman, Michael B. Weimer, and Glenn Agnolet

Appl. Phys. Lett. 75, 2500 (1999); http://dx.doi.org/10.1063/1.125061 (3 pages) | Cited 6 times

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We describe an adjustable, oxide-free, tunnel junction with the stability necessary to observe the vibrational modes of molecules adsorbed on clean metal surfaces. We illustrate the capabilities of this device with inelastic tunneling data from junctions whose barriers are formed by neon/acetylene mixtures of varying concentration. From the concentration dependence of the inelastic spectra, we can distinguish between acetylene molecules chemisorbed on the metal electrodes and those that are either physisorbed or incorporated in the neon barrier. © 1999 American Institute of Physics.
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68.35.Ja Surface and interface dynamics and vibrations
68.43.Pq Adsorbate vibrations

Structure determination of nanostructured Ni–Co films by anomalous x-ray scattering

G. M. Chow, W. C. Goh, Y. K. Hwu, T. S. Cho, J. H. Je, H. H. Lee, H. C. Kang, D. Y. Noh, C. K. Lin, and W. D. Chang

Appl. Phys. Lett. 75, 2503 (1999); http://dx.doi.org/10.1063/1.125062 (3 pages) | Cited 9 times

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Conventional x-ray diffraction failed to provide correct information on alloying of materials made of elements with close lattice parameters, even for elements commonly accepted to have miscibility. Using anomalous x-ray scattering, we showed that nanostructured NiCo films did not necessarily form solid solution as expected from their phase diagram or suggested by the results of conventional x-ray diffraction. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
78.70.Ck X-ray scattering
81.30.Bx Phase diagrams of metals, alloys, and oxides

Efficient operation of a high-power X-band traveling wave tube amplifier

Pingshan Wang, Zhou Xu, James D. Ivers, John A. Nation, Shahid Naqvi, and Levi Schachter

Appl. Phys. Lett. 75, 2506 (1999); http://dx.doi.org/10.1063/1.125063 (2 pages) | Cited 3 times

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We report experimental results demonstrating 54% power conversion efficiency (43% energy conversion efficiency), from a two-stage X-band traveling wave tube amplifier designed for high-power operation. The first stage of the amplifier is a 12-cm-long Boron Nitride dielectric section used to modulate the electron beam. The second stage consists of a long high-phase-velocity bunching section followed by a short low-phase-velocity output section. Output powers of up to 78 MW with narrow spectrum width were obtained with ∼700 kV, ∼200 A beam. © 1999 American Institute of Physics.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
84.30.Le Amplifiers
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