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18 Oct 1999

Volume 75, Issue 16, pp. 2347-2507

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Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. A. Bert, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, I. P. Soshnikov, and P. Werner

Appl. Phys. Lett. 75, 2347 (1999); http://dx.doi.org/10.1063/1.125010 (3 pages) | Cited 35 times

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We demonstrate the possibility of extending the spectral range of luminescence due to InAs quantum dots (QDs) in a GaAs matrix up to 1.7 μm. Realization of such a long wavelength emission is related to formation of lateral associations of QDs during InAs deposition at low substrate temperatures (∼320–400 °C). © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Time-resolved soft x-ray absorption spectroscopy of silicon using femtosecond laser plasma x rays

Hidetoshi Nakano, Yoshinori Goto, Peixiang Lu, Tadashi Nishikawa, and Naoshi Uesugi

Appl. Phys. Lett. 75, 2350 (1999); http://dx.doi.org/10.1063/1.125011 (3 pages) | Cited 17 times

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We measured time-resolved soft x-ray absorption of photoexcited silicon by means of pump-probe spectroscopy, using a picosecond soft x-ray pulse from femtosecond laser-produced plasma as a probe. We observed a 5% increase in the absorption caused by 1010 W/cm2 intensity laser pulse irradiation near the LII,III edge at 100 eV. The change was observed only when the laser and the soft x-ray pulses overlapped on the sample both in time and space. © 1999 American Institute of Physics.
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78.70.Dm X-ray absorption spectra
52.70.La X-ray and γ-ray measurements
78.47.-p Spectroscopy of solid state dynamics

Red electroluminescence from ZnGaS:Mn thin films

V. Dimitrova, A. Draeseke, J. Tate, T. Yokoyama, B. L. Clark, and D. A. Keszler

Appl. Phys. Lett. 75, 2353 (1999); http://dx.doi.org/10.1063/1.125012 (3 pages) | Cited 2 times

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We demonstrate color shifting from the yellow to the red in the electroluminescence from (ZnGa)S:Mn films. We observe threshold voltages down to about 35 V, extremely low for such devices. We discuss the materials characteristics of the phosphor films, and the potential for improvement of the luminous intensity of the devices. © 1999 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
85.60.Jb Light-emitting devices

Parametric fluorescence in periodically poled silica fibers

G. Bonfrate, V. Pruneri, P. G. Kazansky, P. Tapster, and J. G. Rarity

Appl. Phys. Lett. 75, 2356 (1999); http://dx.doi.org/10.1063/1.125013 (3 pages) | Cited 17 times

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We report the observation of quasiphase matched parametric fluorescence from a periodically poled silica fiber. A pair-photon production rate of more than 100 MHz around 1532 nm was achieved in second-order nonlinear gratings for 300 mW of pump power at 766 nm. These results are very promising for the realization of reliable all-fiber single-photon sources for quantum cryptography systems and metrology applications. © 1999 American Institute of Physics.
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42.81.Gs Birefringence, polarization
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.55.Hx Other solid inorganic materials
42.79.Dj Gratings
42.70.Ce Glasses, quartz

Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip

Y. F. Lu, Z. H. Mai, G. Qiu, and W. K. Chim

Appl. Phys. Lett. 75, 2359 (1999); http://dx.doi.org/10.1063/1.125014 (3 pages) | Cited 35 times

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Laser-induced nano-oxidation on hydrogen-passivated Ge (100) surfaces under a scanning tunneling microscope tip in air has been investigated. A 532 nm Nd:YAG pulsed laser with a pulse duration of 7 ns was used. A 2×2 oxide dot array with dot sizes between 20 and 30 nm and an oxide single line with a width less than 30 nm have been created using an electrochemical-etched tungsten tip under laser irradiation. The modified regions were characterized by atomic force microscope. The apparent depth of oxide layer as a function of laser intensity has been studied. The advantages and drawbacks of using a continuous wave laser and a pulsed laser will be discussed. © 1999 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.Rv Passivation
81.65.Mq Oxidation
79.20.Ds Laser-beam impact phenomena
61.82.Fk Semiconductors

High-efficiency interband cascade lasers with peak power exceeding 4 W/facet

J. L. Bradshaw, Rui Q. Yang, J. D. Bruno, J. T. Pham, and D. E. Wortman

Appl. Phys. Lett. 75, 2362 (1999); http://dx.doi.org/10.1063/1.125015 (3 pages) | Cited 19 times

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Mid-IR (3.8–3.9 μm) interband cascade lasers based on InAs/GaInSb type-II heterostructures have been demonstrated at temperatures up to 210 K. From several lasers at temperatures above 100 K, we observed a slope greater than 750 mW/A per facet corresponding to a differential external quantum efficiency exceeding 460%. Also, a peak optical output power exceeding 4 W/facet and peak power efficiency of 7% were observed from one laser at 80 K. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, et al.

Appl. Phys. Lett. 75, 2365 (1999); http://dx.doi.org/10.1063/1.125016 (3 pages) | Cited 200 times

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A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area (∼0.25 mm2). The TIP geometry decreases the mean photon path-length within the crystal, and thus reduces the effects of internal loss mechanisms. By combining this improved device geometry with high-efficiency multiwell active layers, record-level performance for visible-spectrum light-emitting diodes is achieved. Peak efficiencies exceeding 100 lm/W are demonstrated (100 mA dc, 300 K) for orange-emitting (λp ∼ 610 nm) devices, with a peak luminous flux of 60 lumens (350 mA dc, 300 K). In the red wavelength regime (λp ∼ 650 nm), peak external quantum efficiencies of 55% and 60.9% are measured under direct current and pulsed operation, respectively (100 mA, 300 K). © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices

Measurement of internal spatial modes and local propagation properties in optical waveguides

G. H. Vander Rhodes, B. B. Goldberg, M. S. Ünlü, S. T. Chu, W. Pan, T. Kaneko, Y. Kokobun, and B. E. Little

Appl. Phys. Lett. 75, 2368 (1999); http://dx.doi.org/10.1063/1.125017 (3 pages) | Cited 18 times

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Internal spatial modes and local properties controlling optical wave propagation have been measured in glass/silica buried waveguides. The period of the observed standing modes provides a direct measure of the local effective index. The measured effective index and transverse model shape determines the values of all components of the wave vector. In addition, we describe a technique that can obtain detailed information about the locations of remote dielectric interfaces. © 1999 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.70.Ce Glasses, quartz
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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