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18 Oct 1999

Volume 75, Issue 16, pp. 2347-2507

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Effect of growth interruptions on the interfaces of InGaAs/AlAsSb superlattice

Nikolai Georgiev and Teruo Mozume

Appl. Phys. Lett. 75, 2371 (1999); http://dx.doi.org/10.1063/1.125018 (3 pages) | Cited 6 times

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The effect of growth interruption times combined with selective group-V species exposure of InGaAs/AlAsSb short-period superlattice structure was investigated with photoluminescence, x-ray diffraction, and reflection high-energy electron diffraction. Reflection electron diffraction shows surface reconstruction transitions dependent on the time and species type exposure procedure. A shift in the photoluminescence peak position is observed from samples grown under different species type exposure compared to the samples grown without interruption, Sb termination being at a lower energy and As termination at higher energy, respectively. This is interpreted in terms of increased mixing of Sb in the interface InGaAs layers. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Fd III-V semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Intermixing in quantum-dot ensembles with sharp adjustable shells

S. Fafard and C. Nì. Allen

Appl. Phys. Lett. 75, 2374 (1999); http://dx.doi.org/10.1063/1.125019 (3 pages) | Cited 95 times

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State-filling spectroscopy is used to study the effects of alloy intermixing in quantum-dot (QD) ensembles having well-defined electronic shells. Rapid thermal annealing is performed on samples of self-assembled QDs grown with different intersublevel energy spacings. For InAs/GaAs QDs, the intersublevel is tuned between ∼90 and 25 meV. The intense and sharp shell structures observed in photoluminescence indicate unambiguously that the QDs retained their zero-dimensional density of states after the diffusion of the potential, which also causes strong blueshifts (up to ∼200 meV) and a pronounced narrowing of the inhomogeneously broadened emission (down to ∼12 meV). © 1999 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
73.20.At Surface states, band structure, electron density of states

Coherence based contrast enhancement in x-ray radiography with a photoelectron microscope

Y. Hwu, B. Lai, D. C. Mancini, J. H. Je, D. Y. Noh, M. Bertolo, G. Tromba, and G. Margaritondo

Appl. Phys. Lett. 75, 2377 (1999); http://dx.doi.org/10.1063/1.125020 (3 pages) | Cited 5 times

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We show that a photoelectron spectromicroscope of the photoelectron emission microscope type can be used as an x-ray imaging detector for radiology. Using high penetration hard-x-ray photons (wavelength <0.1 nm), samples as thick as a few millimeters can be imaged with submicron resolution. The high imaging resolution enables us to substantially decrease the object-detector distance needed to observe coherent based contrast enhancement with respect to the standard film-based detection technique. Our result implies several advantages, the most important being a marked reduction of the required source emittance for contrast enhanced radiology. © 1999 American Institute of Physics.
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07.85.-m X- and γ-ray instruments
87.80.-y Biophysical techniques (research methods)
87.64.ks Electron and photoelectron

Damage nucleation and vacancy-induced structural transformation in Si grain boundaries

A. Maiti, S. T. Pantelides, M. F. Chisholm, and S. J. Pennycook

Appl. Phys. Lett. 75, 2380 (1999); http://dx.doi.org/10.1063/1.125021 (3 pages) | Cited 8 times

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Atomic resolution Z-contrast scanning transmission electron microscopy reveals preferential nucleation of electron-beam-induced damage in select atomic columns of a Si tilt grain boundary. Atomic scale simulations find that the region of initial damage nucleation corresponds to columns where the formation energies of vacancies and vacancy complexes are very low. The calculations further predict that vacancy accumulation in certain pairs of columns can induce a structural transformation to low-density dislocation “pipes” with all atoms fourfold coordinated. © 1999 American Institute of Physics.
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61.72.Mm Grain and twin boundaries
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.72.J- Point defects and defect clusters
61.80.Fe Electron and positron radiation effects
61.82.Fk Semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

An initiation mechanism of thermal instability of a metal-diamond-vacuum field emission regime

N. S. Xu, Z. X. Yu, S. Z. Deng, J. Chen, and S. S. Wu

Appl. Phys. Lett. 75, 2383 (1999); http://dx.doi.org/10.1063/1.125121 (3 pages) | Cited 3 times

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An analysis is carried out of the physical origin of thermal instability that can trigger a catastrophic vacuum breakdown event in vacuum microelectronic devices based on flat diamond emitters. The temperature rise in a diamond film will enhance internal field emission across metal–diamond interface. This effect can lead to a regenerative process that can initiate a breakdown event at temperature lower than the melting point of an emitter. A set of equations has been developed. These theoretical findings are successfully applied to explain the instability of field emission from the nondoped diamond films. © 1999 American Institute of Physics.
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85.45.Db Field emitters and arrays, cold electron emitters
85.45.Bz Vacuum microelectronic device characterization, design, and modeling
79.70.+q Field emission, ionization, evaporation, and desorption
68.60.Dv Thermal stability; thermal effects
52.80.Vp Discharge in vacuum

Photostimulated luminescence in a rare earth-doped fluorobromozirconate glass ceramic

A. Edgar, J.-M. Spaeth, S. Schweizer, S. Assmann, P. J. Newman, and D. R. MacFarlane

Appl. Phys. Lett. 75, 2386 (1999); http://dx.doi.org/10.1063/1.125022 (3 pages) | Cited 17 times

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Photostimulated luminescence at room temperature was observed in a fluorozirconate glass which was doped with 1% Eu2+ or 1% Ce3+ and 5% Br− ions. Small crystals of BaBr2 (high-pressure phase) form in the glass on cooling. The Eu2+ and Ce3+ luminescence spectra comprised two emission lines each: for Eu2+ one line at 413 nm and a broader band centered at 485 nm, and for Ce3+ one line at 320 nm and a broader band at 425 nm. The luminescence is attributed to the 5d14fn−1→4fn emissions of the rare earth ions. In both cases only one of the emission bands showed photostimulated luminescence. The stimulation band for both rare earth ions was centered at 570 nm. © 1999 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
42.70.Ce Glasses, quartz

Violet/blue light-emitting cerium silicates

Won Chel Choi, Ho Nyung Lee, Eun Kyu Kim, Yong Kim, Chong-Yun Park, Hong Seung Kim, and Jeong Yong Lee

Appl. Phys. Lett. 75, 2389 (1999); http://dx.doi.org/10.1063/1.125023 (3 pages) | Cited 12 times

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We observed violet/blue light emitted from cerium silicates which may be useful for silicon-based optoelectronics. The cerium silicate was produced during a rapid thermal annealing at high temperature (>1100 °C) from the interface between silicon substrate and cerium oxide film. Detailed experiments including x-ray diffraction, high-resolution transmission electron microscope, and Auger depth profiling showed that the cerium silicate consists of Ce4.667(SiO4)3O and Ce2Si2O7 phases. The photoluminescence of the cerium silicate is very strong at room temperature. Specifically, the 358 nm luminescence line is attributed to the Ce2Si2O7 phase. © 1999 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
81.40.Gh Other heat and thermomechanical treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.35.Ct Interface structure and roughness

Crystallization kinetics and glass transition of Zr41Ti14Cu12.5Ni10−xFexBe22.5 bulk metallic glasses

Yan Xin Zhuang, Wei Hua Wang, Yong Zhang, Ming Xiang Pan, and De Qian Zhao

Appl. Phys. Lett. 75, 2392 (1999); http://dx.doi.org/10.1063/1.125024 (3 pages) | Cited 49 times

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The crystallization kinetics and glass transition behavior of Zr41Ti14Cu12.5Ni10−xFexBe22.5 (x = 0, 2, and 5) bulk metallic glasses (BMGs) have been investigated by means of differential scanning calorimeter under nonisothermal conditions. The glass transition temperature Tg, the onset crystallization temperature Tx, and the crystallization peak temperature Tpi of the BMGs are found to depend on the heating rate during the continuous heating. The effective activation energy and the frequency factor of the glass transition and crystallization of the BMGs are determined by the Kissinger method. The glass forming ability of the glass forming alloys has been discussed in view of the crystallization kinetics. © 1999 American Institute of Physics.
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61.43.Fs Glasses
64.70.D- Solid-liquid transitions
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition

Strain relaxation of faceted Ge islands on Si(113)

Jian-hong Zhu, C. Miesner, K. Brunner, and G. Abstreiter

Appl. Phys. Lett. 75, 2395 (1999); http://dx.doi.org/10.1063/1.125025 (3 pages) | Cited 20 times

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We studied the formation and strain relaxation of Ge islands on Si(113) grown at 700 °C by molecular beam epitaxy. Atomic force microscopy reveals that they are mainly (113) top faceted and show a mesa-like shape. Initially formed Ge islands tend to elongate along [33math] due to their anisotropic shear strain. With increasing Ge coverage, they grow mainly laterally towards particular directions, forming large V-shaped Ge clusters. This is analyzed to be caused by the formation of {111} slide plane-associated dislocations. The dislocations are shown to be localized in the islands. Considerable Si material has diffused into the Ge islands. Strain and Ge content in the islands are quantitatively analyzed by micro-Raman spectroscopy. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators
81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
68.35.Gy Mechanical properties; surface strains
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

A two-component phosphor approach for engineering electroluminescence phosphors

T. C. Jones, W. Park, and C. J. Summers

Appl. Phys. Lett. 75, 2398 (1999); http://dx.doi.org/10.1063/1.125026 (3 pages) | Cited 3 times

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The electroluminescence (EL) properties of SrS:Cu, SrS:Ag, and SrS:Ag,Cu thin-film phosphors are reported. SrS:Cu and SrS:Ag are shown to exhibit very different EL properties with SrS:Cu possessing a luminance and efficiency of 30.8 cd/m2 and 0.2 lm/W, compared to SrS:Ag whose luminance and efficiency are 0.7 cd/m2 and 0.001 lm/W, respectively. In contrast, SrS:Ag,Cu exhibits the high luminance and efficiency of SrS:Cu, but the saturated chromaticity of SrS:Ag, which exhibits an excellent blue chromaticity of (0.17,0.15). The improved electroluminescent luminance, efficiency, and color purity of SrS:Ag,Cu are explained by the energy transfer from the Cu+ to Ag+ ions. These results suggest a concept to improve EL performance through the use of a class of two-component phosphors, which exhibit superior color, brightness, and excitation efficiency. © 1999 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Nk Insulators
85.60.Pg Display systems

Electron-induced crosslinking of aromatic self-assembled monolayers: Negative resists for nanolithography

W. Geyer, V. Stadler, W. Eck, M. Zharnikov, A. Gölzhäuser, and M. Grunze

Appl. Phys. Lett. 75, 2401 (1999); http://dx.doi.org/10.1063/1.125027 (3 pages) | Cited 93 times

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We have explored the interaction of self-assembled monolayers of 1,1′-biphenyl-4-thiol (BPT) with low energy electrons. X-ray photoelectron, infrared, and near edge x-ray absorption fine structure spectroscopy showed that BPT forms well-ordered monolayers with the phenyl rings tilted ∼15° from the surface normal. The films were exposed to 50 eV electrons and changes were monitored in situ. Even after high (∼10 mC/cm2) exposures, the molecules maintain their preferred orientation and remain bonded on the gold substrate. An increased etching resistance and changes in the infrared spectra imply a crosslinking between neighboring phenyl groups, which suggests that BPT can be utilized as an ultrathin negative resist. This is demonstrated by the generation of patterns in the underlying gold. © 1999 American Institute of Physics.
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68.18.-g Langmuir-Blodgett films on liquids
61.80.Fe Electron and positron radiation effects
61.82.Pv Polymers, organic compounds
85.40.Hp Lithography, masks and pattern transfer
68.55.-a Thin film structure and morphology
79.60.Fr Polymers; organic compounds
79.60.Dp Adsorbed layers and thin films
78.30.Jw Organic compounds, polymers
78.66.Qn Polymers; organic compounds
78.70.Dm X-ray absorption spectra
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