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25 Oct 1999

Volume 75, Issue 17, pp. 2521-2692

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Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes

E. Martin, J. P. Landesman, J. P. Hirtz, and A. Fily

Appl. Phys. Lett. 75, 2521 (1999); http://dx.doi.org/10.1063/1.125064 (3 pages) | Cited 21 times

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Spatially resolved photoluminescence line scans were performed to determine the local stresses in AlGaAs laser diodes designed for high-power operation at 808 nm. In this approach, the sign and magnitude of the local stress are deduced from the spectral shift of the peak associated with band-to-band transitions in the n-type GaAs substrate. The sensitivity of the technique (minimal equivalent hydrostatic stress that can be detected) can reach 10 MPa or better. Correlations between solder-induced stress distribution in the devices and estimated lifetimes are demonstrated. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Free-space electro-optic detection of continuous-wave terahertz radiation

Ajay Nahata, James T. Yardley, and Tony F. Heinz

Appl. Phys. Lett. 75, 2524 (1999); http://dx.doi.org/10.1063/1.125065 (3 pages) | Cited 38 times

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We present a scheme for the coherent detection of freely propagating continuous-wave terahertz radiation using electro-optic detection. The terahertz radiation is generated by photomixing two single-mode laser diodes in an antenna fabricated on low-temperature-grown GaAs. This radiation is detected using the electro-optic effect in 〈110〉 ZnTe. In contrast to typical terahertz detection techniques, this is a frequency-domain measurement that relies on coherent up-conversion of the terahertz field combined with optical homodyning to suppress background noise. © 1999 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Determination of single-pass optical gain and internal loss using a multisection device

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood

Appl. Phys. Lett. 75, 2527 (1999); http://dx.doi.org/10.1063/1.125066 (3 pages) | Cited 59 times

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We describe a technique for the measurement of optical gain and loss in semiconductor lasers using a single, multisection device. The method provides a complete description of the gain spectrum in absolute units and over a wide current range. Comparison of the transverse electric and transverse magnetic polarized spectra also provides the quasi-Fermi-level energy separation. Measurements on AlGaInP quantum well laser structures with emission wavelengths close to 670 nm show an internal loss of 10 cm−1 and peak gain values up to 4000 cm−1 for current densities up to 4 kA cm−2. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.87.-d Optical testing techniques
85.30.De Semiconductor-device characterization, design, and modeling

Generation of 290 fs laser pulses by self-seeding and soliton compression

D. Huhse, O. Reimann, E. H. Böttcher, and D. Bimberg

Appl. Phys. Lett. 75, 2530 (1999); http://dx.doi.org/10.1063/1.125067 (3 pages)

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Self-seeding with subsequent chirp compensation presents a simple way to generate pulses of a few picoseconds width tunable over more than 30 nm. Further compression of the laser pulses exploiting nonlinear effects in optical fibers (soliton compression) allows the generation of laser pulses with a full width at half maximum of less than 300 fs. Application of these pulses in an electro-optical sampling system is demonstrated. © 1999 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Tg Optical solitons; nonlinear guided waves
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Demonstration of a three-dimensional simple-cubic infrared photonic crystal

Lisa Zavieh and Theresa S. Mayer

Appl. Phys. Lett. 75, 2533 (1999); http://dx.doi.org/10.1063/1.125068 (3 pages) | Cited 11 times

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This letter reports on the use of nonselective dry and selective wet etching to fabricate a gallium arsenide (GaAs) based three-dimensional infrared photonic crystal with a simple-cubic lattice structure. A two-and-one-half-period photonic crystal fabricated using this procedure demonstrated a drop in transmission of approximately 10 dB at a center wavelength of 12 μm for normally incident angles. A shift in the long-wavelength shoulder from 16 to 15 μm was observed as the incident infrared beam was varied from normal to oblique incidence. The measured drop in transmission agrees well with the band gap predicted theoretically for this simple-cubic structure. © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

High-speed operation of gain-switched midinfrared quantum cascade lasers

Roberto Paiella, Federico Capasso, Claire Gmachl, Clyde G. Bethea, Deborah L. Sivco, James N. Baillargeon, Albert L. Hutchinson, and Alfred Y. Cho

Appl. Phys. Lett. 75, 2536 (1999); http://dx.doi.org/10.1063/1.125069 (3 pages) | Cited 10 times

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We report on a simple technique for the generation of short pulses of midinfrared (5 and 8 μm) radiation, based on gain-switched quantum cascade lasers. In particular, an integrated step-recovery diode source (comb generator) is used to drive the lasers, properly packaged for high-speed operation. Using a fast HgCdTe detector, we measure optical pulses with duration as short as 200 ps, broadened by the detector response time, and peak power of a few tens of mW. The maximum operating temperature of these gain-switched sources is approximately 120 K. © 1999 American Institute of Physics.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
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The effect of laser-produced plasma expansion on the ion population

J. Krása, L. Láska, K. Rohlena, M. Pfeifer, J. Skála, B. Králiková, P. Straka, E. Woryna, and J. Wolowski

Appl. Phys. Lett. 75, 2539 (1999); http://dx.doi.org/10.1063/1.125070 (3 pages) | Cited 11 times

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Changes in the ion population during the expansion of Ag, Cu, Pb, and Ta laser-produced plasmas in vacuum were simultaneously measured with two coaxial ion collectors between 82 and 187 cm from a target. The plasma was produced with an iodine laser delivering a power density up to ∼ 1015 W/cm2 onto the target. It was experimentally proved that the charge Q of expanding ions and the corresponding ion current density j are really decreasing with the distance L as Q∝L−2 and j∝L−3, respectively. It implies that the “freezing” of charge states dominates in that interval of L. © 1999 American Institute of Physics.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
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Atomic structure of Ba0.5Sr0.5TiO3 thin films on LaAlO3

H.-J. Gao, C. L. Chen, B. Rafferty, S. J. Pennycook, G. P. Luo, and C. W. Chu

Appl. Phys. Lett. 75, 2542 (1999); http://dx.doi.org/10.1063/1.125071 (3 pages) | Cited 37 times

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Perovskite barium strontium titanate Ba0.5Sr0.5TiO3(BST) thin films were grown on (001) LaAlO3 (LAO) using pulsed-laser ablation. The microstructures of the as-grown BST films were studied with selected electron diffraction, transmission electron microscopy, and scanning transmission electron microscopy. The BST thin films are oriented with their [001] directions parallel to the 〈102〉 directions of the LAO. Both cross-sectional and plan-view studies show the BST films to be single crystals with smooth surfaces. The interfaces were seen to be atomically sharp by cross-sectional, high-resolution electron microscopy. The density of misfit dislocations was consistent with the 4.3% lattice mismatch, and they were found to be dissociated into partials. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions

Yong-Hwan Kwon, G. H. Gainer, S. Bidnyk, Y. H. Cho, J. J. Song, M. Hansen, and S. P. DenBaars

Appl. Phys. Lett. 75, 2545 (1999); http://dx.doi.org/10.1063/1.125072 (3 pages) | Cited 21 times

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We have studied the structural and optical properties of InxGa1−xN/GaN multiple quantum wells with different In compositions of 8.8%, 12.0%, and 13.3% by means of high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), PL excitation (PLE), stimulated emission (SE), and time-resolved PL spectroscopy. As the In composition increases, the superlattice peaks in HRXRD measurements and the PLE band edge broaden, indicating the deterioration of interface quality due to the difficulty of uniform In incorporation into the GaN layer. However, the lower room-temperature SE threshold densities of the higher In concentration samples indicate that the effect of In suppressing nonradiative recombination overcomes the drawbacks associated with increasing interface imperfection. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.47.-p Spectroscopy of solid state dynamics
78.45.+h Stimulated emission

Recovery phenomenon of mechanoluminescence from Ca2Al2SiO7:Ce by irradiation with ultraviolet light

Morito Akiyama, Chao-Nan Xu, Hiroaki Matsui, Kazuhiro Nonaka, and Tadahiko Watanabe

Appl. Phys. Lett. 75, 2548 (1999); http://dx.doi.org/10.1063/1.125073 (3 pages) | Cited 27 times

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We have investigated the mechanoluminescence (ML) from Ca2Al2SiO7:Ce. The ML is clearly visible to the naked eye in the atmosphere. The luminescence integrated intensity is about 400 times as high as that of crystal sugar. The ML center has been identified as the Ce3+ ion from spectra of the ML and also from the photoluminescence studies of Ca2Al2SiO7:Ce. The ML intensity decreases on repetitive application of stress but is completely recovered by irradiation with ultraviolet light. It is suggested that the ML mechanism arises from the movement of dislocations and recombination between electrodes and holes released from these traps which are associated with the Ce3+ centers. © 1999 American Institute of Physics.
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78.60.Mq Sonoluminescence, triboluminescence
78.55.Hx Other solid inorganic materials
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
66.30.Lw Diffusion of other defects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Ht Other nonmetals
72.80.Ga Transition-metal compounds

Phase imaging: Deep or superficial?

O. P. Behrend, L. Odoni, J. L. Loubet, and N. A. Burnham

Appl. Phys. Lett. 75, 2551 (1999); http://dx.doi.org/10.1063/1.125074 (3 pages) | Cited 35 times

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Phase images acquired while intermittently contacting a sample surface with the tip of an atomic force microscope cantilever are not easy to relate to material properties. We have simulated dynamic force curves and compared simulated with experimental results. For some cantilever–sample combinations, the interaction remains a surface effect, whereas for others, the tip penetrates the sample significantly. Height artifacts in the “topography” images, and the role of the sample stiffness, work of adhesion, damping, and topography in the cantilever response manifest themselves to different extents depending on the indentation depth. © 1999 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.Gy Mechanical properties; surface strains

Leakage current behaviors of acceptor- and donor-doped (Ba0.5Sr0.5)TiO3 thin films

Sang Sub Kim and Chanro Park

Appl. Phys. Lett. 75, 2554 (1999); http://dx.doi.org/10.1063/1.125075 (3 pages) | Cited 28 times

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We have investigated the effects of acceptor and donor doping on the leakage current behavior of Pt/(Ba0.5Sr0.5)TiO3/Pt film capacitors prepared by a pulsed-laser deposition method. We selected Mn/Al and Nb as acceptor and donor dopants, respectively. The leakage current behavior depends strongly on the type of dopants. Al doping decreases the leakage current level, and Mn doping decreases it further. Nb doping greatly increases it. The decrease in leakage current associated with acceptor doping seems to partly result from a decrease in tunneling current due to expansion of the depletion layer width. The converse appears to apply with donor doping. © 1999 American Institute of Physics.
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73.61.Ng Insulators
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

The controlled formation of ordered, sinusoidal structures by plasma oxidation of an elastomeric polymer

Ned Bowden, Wilhelm T. S. Huck, Kateri E. Paul, and George M. Whitesides

Appl. Phys. Lett. 75, 2557 (1999); http://dx.doi.org/10.1063/1.125076 (3 pages) | Cited 172 times

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This letter describes a technique for generating waves on polydimethylsiloxane (PDMS) patterned in bas-relief. The PDMS is heated, and its surface oxidized in an oxygen plasma; this oxidation forms a thin, stiff silicate layer on the surface. When the PDMS cools, it contracts and places the silicate layer under compressive stress. This stress is relieved by buckling to form patterns of waves with wavelengths from 0.5 to 10 μm. The waves are locally ordered near a step or edge in the PDMS. The wavelength, amplitude, and pattern of the waves can be controlled by controlling the temperature of the PDMS and the duration of the oxidation. The mechanism for the formation and order of the waves is described. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Strong and stable visible luminescence from Au-passivated porous silicon

C. H. Chen and Y. F. Chen

Appl. Phys. Lett. 75, 2560 (1999); http://dx.doi.org/10.1063/1.125077 (3 pages) | Cited 32 times

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We report on porous silicon (PS) samples with strong and stable red photoluminescence (PL) prepared by chemical anodization of gold-plated substrate. We demonstrate that the structural stability of Au-passivated porous silicon is much better than that of normal PS. It is also found that the PL intensity of Au-passivated PS can be enhanced by a factor of 3 when prepared under the same condition as that for normal PS. The infrared absorption spectra reveal that the photoluminescence stability can be attributed to the formation of stable Au–Si bonds on the surface of porous silicon. In addition, our study provides further evidence to support the quantum confinement model of the red emission of porous silicon. © 1999 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.55.Mb Porous materials
78.30.Am Elemental semiconductors and insulators
81.65.Rv Passivation
82.45.-h Electrochemistry and electrophoresis
81.05.Cy Elemental semiconductors
81.05.Rm Porous materials; granular materials

Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities

K. C. Zeng, L. Dai, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 75, 2563 (1999); http://dx.doi.org/10.1063/1.125078 (3 pages) | Cited 22 times

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Microrings of varying sizes have been fabricated from InxGa1−xN/GaN (x ∼ 0.15) multiple quantum wells (MQWs). Photolithography and dry etching techniques including both ion-beam and inductively coupled plasma etching were employed to pattern the III–nitride MQW microrings. Individual microrings were optically pumped and optical resonance modes were observed. The observed mode spacings were consistent with those expected for whispering-gallery (WG) modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the rings under investigation. The results obtained from the microring cavities were compared with those of the III–nitride MQW microdisk cavities. Our results have indicated that resonance modes corresponding to the radial and the WG modes are simultaneously present in microdisk cavities, but only WG modes are available from the microring cavities. Implications of our results on future GaN-based microcavity light emitters have been discussed. © 1999 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
42.60.By Design of specific laser systems
78.55.Cr III-V semiconductors
85.40.Hp Lithography, masks and pattern transfer

Optical band gap dependence on composition and thickness of InxGa1−xN (0<x<0.25) grown on GaN

C. A. Parker, J. C. Roberts, S. M. Bedair, M. J. Reed, S. X. Liu, N. A. El-Masry, and L. H. Robins

Appl. Phys. Lett. 75, 2566 (1999); http://dx.doi.org/10.1063/1.125079 (3 pages) | Cited 38 times

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Band gap measurements have been carried out in strained and relaxed InxGa1−xN epilayers with x<0.25. Values of x were determined from x-ray diffraction of relaxed films. The lowest energy absorption threshold, measured by transmittance, was found to occur at the same energy as the peak of the photoluminescence spectrum. Bowing parameters for both strained and relaxed films were determined to be 3.42 and 4.11 eV, respectively. The dependence of the band gap shift, ΔEg, on strain is presented. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
68.60.Bs Mechanical and acoustical properties
78.40.Fy Semiconductors
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
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Electrical effects of plasma damage in p-GaN

X. A. Cao, S. J. Pearton, A. P. Zhang, G. T. Dang, F. Ren, R. J. Shul, L. Zhang, R. Hickman, and J. M. Van Hove

Appl. Phys. Lett. 75, 2569 (1999); http://dx.doi.org/10.1063/1.125080 (3 pages) | Cited 66 times

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The reverse breakdown voltage of p-GaN Schottky diodes was used to measure the electrical effects of high density Ar or H2 plasma exposure. The near surface of the p-GaN became more compensated through introduction of shallow donor states whose concentration depended on ion flux, ion energy, and ion mass. At high fluxes or energies, the donor concentration exceeded 1019 cm−3 and produced p-to-n surface conversion. The damage depth was established as ∼400 Å based on electrical and wet etch rate measurements. Rapid thermal annealing at 900 °C under a N2 ambient restored the initial electrical properties of the p-GaN. © 1999 American Institute of Physics.
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72.80.Ey III-V and II-VI semiconductors
85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices
52.40.Hf Plasma-material interactions; boundary layer effects

Nanoscale structure and chemistry of Al0.49In0.51P thermal oxide

D. T. Mathes, R. Hull, R. D. Dupuis, R. D. Heller, and B. P. Tinkham

Appl. Phys. Lett. 75, 2572 (1999); http://dx.doi.org/10.1063/1.125081 (3 pages) | Cited 1 time

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In this letter, the nanoscale structure and chemistry of the III–V thermal oxide formed from Al0.49In0.51P is described. Transmission electron microscopy studies have shown that the oxide is an amorphous compound, which occupies greater volume than the original unoxidized crystalline Al0.49In0.51P layer, and which contains O, Al, In, and P (i.e., none of the species are completely desorbed during the oxidation reaction). Electron energy loss spectroscopy and energy spectroscopic imaging have shown specifically that the oxidation products include Al2O3 and In2O3 and P, either as an oxide or in some other amorphous compound. © 1999 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
61.43.Dq Amorphous semiconductors, metals, and alloys
81.65.Mq Oxidation
79.20.Kz Other electron-impact emission phenomena
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates

C. Kadow, S. B. Fleischer, J. P. Ibbetson, J. E. Bowers, and A. C. Gossard

Appl. Phys. Lett. 75, 2575 (1999); http://dx.doi.org/10.1063/1.125082 (3 pages) | Cited 7 times

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This letter describes time-resolved differential reflection measurements on low-temperature grown GaAs on (100) Si substrates. The carrier recombination depends sensitively on growth and anneal conditions. The differential reflectance signals of samples annealed at 600 °C are dominated by an exponential subpicosecond transient, which can be as short as 370 fs. Optical microscopy and atomic force microscopy show that the films are comparably smooth or smoother than other GaAs material grown on Si. X-ray diffraction indicates tensile strain in the films, which is explained by the different thermal expansion coefficients of GaAs and Si. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
72.30.+q High-frequency effects; plasma effects
72.80.Ey III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
73.50.Mx High-frequency effects; plasma effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics
61.72.Cc Kinetics of defect formation and annealing
68.35.B- Structure of clean surfaces (and surface reconstruction)
65.40.De Thermal expansion; thermomechanical effects
68.60.Bs Mechanical and acoustical properties

Band gaps of lattice-matched (Ga,In)(As,N) alloys

L. Bellaiche

Appl. Phys. Lett. 75, 2578 (1999); http://dx.doi.org/10.1063/1.125083 (3 pages) | Cited 40 times

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The band gaps of the GaInAsN alloys lattice-matched to GaAs and InP have been calculated as a function of the nitrogen composition and as a function of pressure, by using a pseudopotential technique. The calculations are in excellent agreement with the experimental results, which are only available for small nitrogen compositions. The band gap of both lattice-matched systems is predicted to significantly decrease when further increasing the nitrogen content. As a result, the band gap of both systems closes for large enough nitrogen compositions (around 12%–20%). © 1999 American Institute of Physics.
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71.20.Nr Semiconductor compounds
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)

Quantum interference control of currents in CdSe with a single optical beam

N. Laman, A. I. Shkrebtii, J. E. Sipe, and H. M. van Driel

Appl. Phys. Lett. 75, 2581 (1999); http://dx.doi.org/10.1063/1.125084 (3 pages) | Cited 24 times

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We show that ballistic current generation can occur in a semiconductor via quantum interference between absorption pathways for orthogonal polarization components of a single-frequency beam. This effect occurs for a subset of noncentrosymmetric materials, is macroscopically associated with a second-order nonlinear optical susceptibility, and produces current injection linearly proportional to the beam intensity. We demonstrate this in wurtzite CdSe (Eg = 1.75 eV) at 295 K using cw and femtosecond optical sources of wavelength 600–750 nm (2.07–1.66 eV). The intensity and spectral dependence are in reasonable agreement with a first-principles calculation. Continuous current density of 30 μA cm−2 is produced for 60 mW cm−2 intensity at 633 nm. © 1999 American Institute of Physics.
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72.20.Ht High-field and nonlinear effects
73.23.Ad Ballistic transport
72.80.Ey III-V and II-VI semiconductors
42.65.An Optical susceptibility, hyperpolarizability

Enhancement of erbium photoluminescence by substitutional C alloying of Si

M. Markmann, E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter, and Ch. Buchal

Appl. Phys. Lett. 75, 2584 (1999); http://dx.doi.org/10.1063/1.125085 (3 pages) | Cited 18 times

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Photoluminescence (PL) at 1.54 μm of erbium-doped Si1−yCy alloys grown by molecular beam epitaxy (MBE) has been analyzed depending on sample temperature, excitation density, and growth conditions. Erbium activation raises with increasing incorporation of substitutional carbon compared to interstitial carbon. For [Er] = 4.5×1019 cm−3 and y = 0.1% maximum PL output at 1.54 μm was achieved for growth temperatures at 430 °C. Additional annealing could further enhance PL intensity at 1.54 μm. For increasing sample temperature a decrease of PL intensity with two characteristic activation energies around 100 and 10–20 meV is observed, which results in quenching of PL intensity at lower temperatures for Si:Er:C layers compared to Si:Er:O layers. PL spectra show different fine structure for oxygen and carbon codoping by MBE or ion implantation, higher efficiency, and lower PL background for MBE-grown samples in contrast to ion-implanted layers. © 1999 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
61.72.Cc Kinetics of defect formation and annealing
61.72.up Other materials
78.66.Li Other semiconductors
61.80.Jh Ion radiation effects

Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN

H. P. D. Schenk, P. de Mierry, M. Laügt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart

Appl. Phys. Lett. 75, 2587 (1999); http://dx.doi.org/10.1063/1.125086 (3 pages) | Cited 25 times

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We have studied the indium incorporation into InGaN ternary alloys during low-pressure metalorganic vapor-phase epitaxy as a function of the trimethylindium flow and the growth temperature in the 800–860 °C range. Partially relaxed InxGa1−xN bulk films with indium compositions 0.02≲x≲0.14 have been grown. In relation to the band-gap energy at room temperature, determined by photothermal deflection spectroscopy, we find a downward band-gap bowing of 2.65±0.15 eV. The required change of the trimethylindium flow as a function of the growth temperature, necessary to obtain isocomposition InGaN films, can be described by an Arrhenius law. We find an indium desorption energy of 0.8±0.3 eV. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving

K. S. Teng, P. R. Dunstan, S. P. Wilks, and R. H. Williams

Appl. Phys. Lett. 75, 2590 (1999); http://dx.doi.org/10.1063/1.125087 (3 pages) | Cited 5 times

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Scanning tunneling microscopy and spectroscopy (STS) have been used to investigate submonolayer Si depositions on clean cleaved GaAs(110). These studies focus on the effect of cleaving-induced step defects on GaAs(110), the resultant Si overlayer formation, and the electrical properties of the substrate/overlayer system formed at 280 °C. STS measurements at a clean step edge on GaAs(110) show that the Fermi level shifts towards midgap for both n and p type, while measurements performed on Si nanoislands at step edges show that the Fermi level reverts back towards its “ideal” position. Results indicate the passivation properties of Si on GaAs(110) when deposited under these conditions. Implications for use in laser facets are discussed. © 1999 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.65.Rv Passivation
81.05.Ea III-V semiconductors
73.22.-f Electronic structure of nanoscale materials and related systems

Low-field recombination in SrS:Cu thin-film electroluminescent devices

K. Neyts and G. Stuyven

Appl. Phys. Lett. 75, 2593 (1999); http://dx.doi.org/10.1063/1.125088 (3 pages) | Cited 2 times

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Thin-film electroluminescent devices with a SrS:Cu phosphor layer emit bright saturated blue light, useful for display applications. Whereas SrS:Ce-based devices normally emit two light pulses for each voltage polarity, the studied SrS:Cu devices yield an additional light peak at lower voltages. Optoelectronic measurements combined with numerical simulations indicate that the third light peak is due to low-field recombination of electrons, which are released from shallow interface states at low fields. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
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