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25 Oct 1999

Volume 75, Issue 17, pp. 2521-2692

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Different fatigue behaviors of SrBi2Ta2O9 and Bi3TiTaO9 films: Role of perovskite layers

B. S. Kang, B. H. Park, S. D. Bu, S. H. Kang, and T. W. Noh

Appl. Phys. Lett. 75, 2644 (1999); http://dx.doi.org/10.1063/1.125105 (3 pages) | Cited 41 times

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To investigate the role of the perovskite layers on fatigue behaviors, SrBi2Ta2O9(SBT) and Bi3TiTaO9 (BTT) films were prepared by pulsed laser deposition using 15% Bi-excess bulk targets. The SBT and the BTT films grown at the similar deposition conditions showed similar growth behaviors, electrical properties, and retention characteristics. However, these films showed very different fatigue behaviors. The difference should come from the oxygen stability in the perovskite layer. Our work demonstrates that oxygen stability of the perovskite layers, as well as the self-regulating adjustment of the Bi2O2 layers, should be considered in the search for new candidate materials for nonvolatile ferroelectric memory devices. © 1999 American Institute of Physics.
Show PACS
68.60.Bs Mechanical and acoustical properties
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
62.20.M- Structural failure of materials
77.80.-e Ferroelectricity and antiferroelectricity

(Pb1−xLax)(Zr1−yTiy)O3 patterns on Pt-coated silicon prepared by pulsed laser deposition process

Kuo-Shung Liu, Yu-Jen Chen, Gwo Jamn, and I-Nan Lin

Appl. Phys. Lett. 75, 2647 (1999); http://dx.doi.org/10.1063/1.125106 (3 pages) | Cited 6 times

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Ferroelectric (PbxLa1−x)(ZryTi1−y)O3 (PLZT) thin films on Pt(Si) substrates have been synthesized using a two-step process, which includes low temperature pulsed laser deposition (PLD) and high temperature rapid thermal annealing (RTA). Pure perovskite PLZT phase can be achieved by RTA at 550 °C (1–60 s), provided that the crystalline SrRuO3 layer is used as buffer layer on top of Pt(Si) substrates. Interdiffusion between layers is efficiently suppressed. Increasing the RTA duration insignificantly modifies the crystalline structure and the microstructure of the PLZT/SRO/Pt(Si) films, but significantly improves the ferroelectric properties and leakage characteristics of the films. The electrical properties, which are optimized for the films RTA at 550 °C (30 s), are Pr = 19 μC/cm2, Ec = 70 kV/cm, and JL<10−5 A/cm2 for Ea<450 kV/cm applied field. A self-aligned pattern consisting of crystalline PLZT dots with good ferroelectric properties (Pr = 14 μC/cm2, Ec = 80 kV/cm) has been demonstrated. © 1999 American Institute of Physics.
Show PACS
81.15.Fg Pulsed laser ablation deposition
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.35.Fx Diffusion; interface formation

Enhanced ferroelectric properties and lowered processing temperatures of strontium bismuth niobates with vanadium doping

Yun Wu and Guozhong Cao

Appl. Phys. Lett. 75, 2650 (1999); http://dx.doi.org/10.1063/1.125107 (3 pages) | Cited 62 times

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This letter reports on enhanced ferroelectric properties and lowered processing temperatures of a SrBi2(V, Nb)2O9 system with vanadium doping. The samples were prepared by reaction sintering of powder mixtures of constituent oxides. With partial substitution of niobium by vanadium cations (up to 10 at. %), the single-phase layered perovskite structure was preserved and the sintering temperature of the system was significantly lowered (∼ 200 °C). The incorporation of vanadium into the layered perovskite structure resulted in a shift of the Curie point to higher temperatures, from 435 to 457 °C with 10 at. % vanadium doping, and an increase in dielectric constant, from ∼700 to ∼1200 with 5 at. % vanadium doping, at their respective Curie points. Both enhanced Curie temperatures and dielectric constants at the Curie points indicate an increase in polarizability, which could be attributed to the increased “rattling space” due to the incorporation of much smaller vanadium cations. Further measurements also revealed that loss tangent of vanadium doped layered perovskites was the same as that without vanadium doping. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
77.22.Ch Permittivity (dielectric function)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization

High electrostrictive strain under high mechanical stress in electron-irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer

Vivek Bharti, Z.-Y. Cheng, S. Gross, T.-B. Xu, and Q. M. Zhang

Appl. Phys. Lett. 75, 2653 (1999); http://dx.doi.org/10.1063/1.125108 (3 pages) | Cited 13 times

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In this letter, we show that the electric field induced strain in the electron irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer can generate high strain even under a high mechanical stress. The observed change in strain with stress is due to the electrostrictive coupling of the local polarization with stress, and can be directly related to the change of the induced strain with temperature. The results indicate that the field induced strain observed in the films investigated is indeed from the local polarization regions in the material, and is electrostrictive in nature. © 1999 American Institute of Physics.
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77.65.Ly Strain-induced piezoelectric fields
77.84.Jd Polymers; organic compounds
61.80.Fe Electron and positron radiation effects
61.82.Pv Polymers, organic compounds
77.22.Ej Polarization and depolarization

Growth and characterization of SrBi2Nb2O9 thin films by pulsed-laser ablation

S. Bhattacharyya, S. S. N. Bharadwaja, and S. B. Krupanidhi

Appl. Phys. Lett. 75, 2656 (1999); http://dx.doi.org/10.1063/1.125109 (3 pages) | Cited 22 times

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Polycrystalline films of SrBi2Nb2O9 were grown using pulsed-laser ablation. The ferroelectric properties were achieved by low-temperature deposition followed by a subsequent annealing process. The lower switching voltage was obtained by lowering the thickness, which did not affect the insulating nature of the films. The hysteresis results showed an excellent square-shaped loop with results (Pr = 6 μC/cm2, Ec = 100 kV/cm) in good agreement with earlier reports. The films also exhibited a dielectric constant of 250 and a dissipation factor of 0.02. The transport studies indicated an ohmic behavior, while higher voltages induced a bulk space charge. © 1999 American Institute of Physics.
Show PACS
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)
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