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25 Oct 1999

Volume 75, Issue 17, pp. 2521-2692

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Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes

E. Martin, J. P. Landesman, J. P. Hirtz, and A. Fily

Appl. Phys. Lett. 75, 2521 (1999); http://dx.doi.org/10.1063/1.125064 (3 pages) | Cited 21 times

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Spatially resolved photoluminescence line scans were performed to determine the local stresses in AlGaAs laser diodes designed for high-power operation at 808 nm. In this approach, the sign and magnitude of the local stress are deduced from the spectral shift of the peak associated with band-to-band transitions in the n-type GaAs substrate. The sensitivity of the technique (minimal equivalent hydrostatic stress that can be detected) can reach 10 MPa or better. Correlations between solder-induced stress distribution in the devices and estimated lifetimes are demonstrated. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Free-space electro-optic detection of continuous-wave terahertz radiation

Ajay Nahata, James T. Yardley, and Tony F. Heinz

Appl. Phys. Lett. 75, 2524 (1999); http://dx.doi.org/10.1063/1.125065 (3 pages) | Cited 38 times

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We present a scheme for the coherent detection of freely propagating continuous-wave terahertz radiation using electro-optic detection. The terahertz radiation is generated by photomixing two single-mode laser diodes in an antenna fabricated on low-temperature-grown GaAs. This radiation is detected using the electro-optic effect in 〈110〉 ZnTe. In contrast to typical terahertz detection techniques, this is a frequency-domain measurement that relies on coherent up-conversion of the terahertz field combined with optical homodyning to suppress background noise. © 1999 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Determination of single-pass optical gain and internal loss using a multisection device

J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton, and P. Blood

Appl. Phys. Lett. 75, 2527 (1999); http://dx.doi.org/10.1063/1.125066 (3 pages) | Cited 59 times

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We describe a technique for the measurement of optical gain and loss in semiconductor lasers using a single, multisection device. The method provides a complete description of the gain spectrum in absolute units and over a wide current range. Comparison of the transverse electric and transverse magnetic polarized spectra also provides the quasi-Fermi-level energy separation. Measurements on AlGaInP quantum well laser structures with emission wavelengths close to 670 nm show an internal loss of 10 cm−1 and peak gain values up to 4000 cm−1 for current densities up to 4 kA cm−2. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.87.-d Optical testing techniques
85.30.De Semiconductor-device characterization, design, and modeling

Generation of 290 fs laser pulses by self-seeding and soliton compression

D. Huhse, O. Reimann, E. H. Böttcher, and D. Bimberg

Appl. Phys. Lett. 75, 2530 (1999); http://dx.doi.org/10.1063/1.125067 (3 pages)

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Self-seeding with subsequent chirp compensation presents a simple way to generate pulses of a few picoseconds width tunable over more than 30 nm. Further compression of the laser pulses exploiting nonlinear effects in optical fibers (soliton compression) allows the generation of laser pulses with a full width at half maximum of less than 300 fs. Application of these pulses in an electro-optical sampling system is demonstrated. © 1999 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Tg Optical solitons; nonlinear guided waves
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Demonstration of a three-dimensional simple-cubic infrared photonic crystal

Lisa Zavieh and Theresa S. Mayer

Appl. Phys. Lett. 75, 2533 (1999); http://dx.doi.org/10.1063/1.125068 (3 pages) | Cited 11 times

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This letter reports on the use of nonselective dry and selective wet etching to fabricate a gallium arsenide (GaAs) based three-dimensional infrared photonic crystal with a simple-cubic lattice structure. A two-and-one-half-period photonic crystal fabricated using this procedure demonstrated a drop in transmission of approximately 10 dB at a center wavelength of 12 μm for normally incident angles. A shift in the long-wavelength shoulder from 16 to 15 μm was observed as the incident infrared beam was varied from normal to oblique incidence. The measured drop in transmission agrees well with the band gap predicted theoretically for this simple-cubic structure. © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

High-speed operation of gain-switched midinfrared quantum cascade lasers

Roberto Paiella, Federico Capasso, Claire Gmachl, Clyde G. Bethea, Deborah L. Sivco, James N. Baillargeon, Albert L. Hutchinson, and Alfred Y. Cho

Appl. Phys. Lett. 75, 2536 (1999); http://dx.doi.org/10.1063/1.125069 (3 pages) | Cited 10 times

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We report on a simple technique for the generation of short pulses of midinfrared (5 and 8 μm) radiation, based on gain-switched quantum cascade lasers. In particular, an integrated step-recovery diode source (comb generator) is used to drive the lasers, properly packaged for high-speed operation. Using a fast HgCdTe detector, we measure optical pulses with duration as short as 200 ps, broadened by the detector response time, and peak power of a few tens of mW. The maximum operating temperature of these gain-switched sources is approximately 120 K. © 1999 American Institute of Physics.
Show PACS
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
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