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25 Oct 1999

Volume 75, Issue 17, pp. 2521-2692

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Growth and magnetoresistive properties of (LaMnO3)m(SrMnO3)n superlattices

P. A. Salvador, A.-M. Haghiri-Gosnet, B. Mercey, M. Hervieu, and B. Raveau

Appl. Phys. Lett. 75, 2638 (1999); http://dx.doi.org/10.1063/1.125103 (3 pages) | Cited 42 times

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Artificial (LaMnO3)m(SrMnO3)n superlattices, n/(m+n) = 0.26, were grown with pulsed-laser deposition, and the superlattice period Λ was varied. Their structural characteristics were investigated using x-ray diffraction and electron microscopy. When Λ<ap (perovskite lattice parameter), bulk-like properties of La0.74Sr0.26MnO3 are obtained: TMI (metal-to-insulator transition temperature) ≈ Tc (Curie temperature) ≈345 K and −MR (magnetoresistance) ≈100%. Increasing Λ (to 21 ap) leads to a decrease in the Tc, the low-temperature magnetization, the magnetoresistance, and the TMI—eventually becoming insulating at low temperatures. These effects can be explained by Mn3+/Mn4+ separation arising from the artificially induced La/Sr order. © 1999 American Institute of Physics.
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75.47.Gk Colossal magnetoresistance
75.47.De Giant magnetoresistance
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Fg Pulsed laser ablation deposition
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Switching asymmetries in closely coupled magnetic nanostructure arrays

R. E. Dunin-Borkowski, M. R. McCartney, B. Kardynal, David J. Smith, and M. R. Scheinfein

Appl. Phys. Lett. 75, 2641 (1999); http://dx.doi.org/10.1063/1.125104 (3 pages) | Cited 34 times

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Cobalt nanostructures (220 and 300 nm×275 nm×30 nm) were fabricated using electron beam lithography into ordered, close proximity (170 nm) arrays. Domain configurations with accompanying hysteresis loops were measured using off-axis electron holography. Measurements were compared to solutions of the Landau–Lifshitz–Gilbert equations. Both exhibit switching asymmetries due to strong intercell coupling and the presence of a field normal to the cell surface. Magnetic domain configurations during switching depended strongly on the initial conditions, as well as the direction of the perpendicular field relative to the in-plane hysteresis-field direction. © 1999 American Institute of Physics.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Cc Other ferromagnetic metals and alloys
75.50.Ss Magnetic recording materials
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.60.Ch Domain walls and domain structure
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