APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Nov 1999

Volume 75, Issue 18, pp. 2707-2859

Return to All Sections
back to top
RSS Feeds

Controlled growth of a-/b- and c-axis oriented epitaxial SrBi2Ta2O9 ferroelectric thin films

S. E. Moon, T. K. Song, S. B. Back, S.-I. Kwun, J.-G. Yoon, and J. S. Lee

Appl. Phys. Lett. 75, 2827 (1999); http://dx.doi.org/10.1063/1.125163 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Thin films of a-/b- and c-axis oriented SrBi2Ta2O9 (SBT) were epitaxially grown on (110) MgO and (100) MgO substrates, respectively, by a rf magnetron sputtering deposition method. The orthorhombic SBT phase was confirmed by electron probe microanalysis and infrared reflectance spectra. The oriented growth was proved by transmission electron microscopy together with x-ray diffraction. The orientation relationship of the a-/b-axis oriented film with the substrates was determined to be SBT[001]//MgO[001] and SBT[010]//MgO[1math0](SBT[100]//MgO[1math0]) from electron diffraction patterns. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
77.80.-e Ferroelectricity and antiferroelectricity

Ab initio study of 180° domain wall energy and structure in PbTiO3

S. Pöykkö and D. J. Chadi

Appl. Phys. Lett. 75, 2830 (1999); http://dx.doi.org/10.1063/1.125164 (3 pages) | Cited 17 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have calculated the electronic and atomic structures for 180° domain walls in PbTiO3 using a first-principles total energy method. Domain walls are found to be Pb centered and extremely narrow with a width of only about two lattice constants. The energy density of a domain wall is calculated to be 0.1–0.2 J/m2. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
71.15.Nc Total energy and cohesive energy calculations
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)
71.55.Ht Other nonmetals

Scanning nonlinear dielectric microscopy with nanometer resolution

Yasuo Cho, Satoshi Kazuta, and Kaori Matsuura

Appl. Phys. Lett. 75, 2833 (1999); http://dx.doi.org/10.1063/1.125165 (3 pages) | Cited 96 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A very high-resolution scanning nonlinear dielectric microscope was developed for the observation of ferroelectric polarization. We demonstrate that the resolution of the microscope is of a nanometer order by measurement of the c–c domain wall of a BaTiO3 single crystal, and that this microscope is very useful not only for the domain observation of ferroelectric bulk material but also for that of thin films. © 1999 American Institute of Physics.
Show PACS
07.79.-v Scanning probe microscopes and components
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation

V. Mikhelashvili and G. Eisenstein

Appl. Phys. Lett. 75, 2836 (1999); http://dx.doi.org/10.1063/1.125166 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report electrical characteristics of Ta2O5 films deposited by a simple electron beam gun evaporator. We describe thickness-dependent characteristics for films with thicknesses of 7–130 nm. An equivalent SiO2 thickness of 3.5–4.5 nm for films whose leakage current density at an electric field of 106 V/cm is lower than 10−7 A/cm2 is demonstrated. © 1999 American Institute of Physics.
Show PACS
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
61.72.Cc Kinetics of defect formation and annealing

Degradation of ferroelectric SrBi2Ta2O9 materials under reducing conditions and their reaction with Pt electrodes

Y. Shimakawa and Y. Kubo

Appl. Phys. Lett. 75, 2839 (1999); http://dx.doi.org/10.1063/1.125167 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The degradation of ferroelectric SrBi2Ta2O9 in an H2-containing reducing atmosphere and its recovery by subsequent annealing in oxygen have been reproduced experimentally by using bulk ceramic samples. SrBi2Ta2O9 decomposes into Bi metal and Sr–Ta oxide(s) in H2 above 300 °C, and the decomposition rate increases as the annealing temperature rises. The recovery of SrBi2Ta2O9 is achieved through oxidation of Bi metal into β-Bi2O3, followed by a reaction of β-Bi2O3 and Sr–Ta oxide(s). In the presence of Pt, which is usually used as an electrode, the decomposition of SrBi2Ta2O9 is accelerated. Bi–Pt alloy and Bi–Pt oxide are produced under the reducing and oxidizing conditions, respectively. Our findings have important implications concerning the degradation of SrBi2Ta2O9 capacitors and the reaction between SrBi2Ta2O9 materials and Pt electrodes during thin-film device fabrication. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close