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8 Nov 1999

Volume 75, Issue 19, pp. 2873-3035

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Isotropic polarization modulational instability and domain walls in spun fibers

P. Kockaert, M. Haelterman, S. Pitois, and G. Millot

Appl. Phys. Lett. 75, 2873 (1999); http://dx.doi.org/10.1063/1.125175 (3 pages) | Cited 8 times

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By means of a very low birefringence spun fiber, we investigate experimentally the phenomenon of polarization modulational instability in the conditions of effective isotropy of the Kerr medium. By showing that birefringence in spun fibers can be negligibly small as compared to nonlinear effects, our results open up new prospects in the development of applied nonlinear fiber optics. This aspect is illustrated through the generation of polarization domain walls whose interest for optical fiber data transmissions has been recently discussed. © 1999 American Institute of Physics.
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42.81.Gs Birefringence, polarization
42.25.Lc Birefringence
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

High-efficiency midinfrared “W” laser with optical pumping injection cavity

C. L. Felix, W. W. Bewley, I. Vurgaftman, L. J. Olafsen, D. W. Stokes, J. R. Meyer, and M. J. Yang

Appl. Phys. Lett. 75, 2876 (1999); http://dx.doi.org/10.1063/1.125176 (3 pages) | Cited 15 times

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We describe an optical pumping injection cavity (OPIC) edge-emitting laser which employs GaSb/AlAsSb distributed Bragg reflectors above and below the type-II “W” active region to form an etalon for the pump beam. A pulsed W–OPIC laser emitting at 3.1–3.4 μm displays an incident threshold pump intensity of only 8 kW/cm2 at 300 K, and incident power conversion efficiencies per facet of 9% at 77 K and 4% at 275 K. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Effect of indium doping on the transient optical properties of GaN films

Hidekazu Kumano, Ken-ichi Hoshi, Satoru Tanaka, Ikuo Suemune, Xu-Qiang Shen, Philippe Riblet, Peter Ramvall, and Yoshinobu Aoyagi

Appl. Phys. Lett. 75, 2879 (1999); http://dx.doi.org/10.1063/1.125178 (3 pages) | Cited 17 times

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We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.45.+h Stimulated emission
78.47.-p Spectroscopy of solid state dynamics
61.72.uj III-V and II-VI semiconductors

Actively mode-locked p-Ge laser in Faraday configuration

A. V. Muravjov, S. H. Withers, R. C. Strijbos, S. G. Pavlov, V. N. Shastin, and R. E. Peale

Appl. Phys. Lett. 75, 2882 (1999); http://dx.doi.org/10.1063/1.125179 (3 pages) | Cited 6 times

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Active mode locking of the far-infrared p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields applied to the laser crystal. The laser generates 200 ps pulses of 80–110 cm−1 radiation with a laser-cavity roundtrip frequency of 454 MHz. The mechanism of gain modulation by the external rf electric field is based on induced electric-field gradients inside the active crystal and requires less rf power than was found previously for Voigt geometry. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Fiber-optic oxygen sensor using molybdenum chloride cluster luminescence

Ruby N. Ghosh, Gregory L. Baker, Cory Ruud, and Daniel G. Nocera

Appl. Phys. Lett. 75, 2885 (1999); http://dx.doi.org/10.1063/1.125180 (3 pages) | Cited 19 times

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We report on a reflection-mode fiber-optic oxygen sensor based on the 3O2 quenching of the red emission from hexanuclear molybdenum chloride clusters. Measurements of the probe operating in a 0%–21% gaseous oxygen environment have been obtained, a range suitable for biological and automotive applications. The luminescence signal increases with decreasing oxygen concentration in accordance with theory. We observe clearly resolvable steps in the sensor response for changes of 0.1% absolute oxygen concentration in the 0%–1.0% range. The response time of the fiber probe is theoretically predicted to be 1 s. © 1999 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.60.Vg Fiber-optic instruments
42.81.Pa Sensors, gyros

Strong nonlinear optical response in epitaxial liftoff single-crystal LiNbO3 films

A. M. Radojevic, M. Levy, H. Kwak, and R. M. Osgood

Appl. Phys. Lett. 75, 2888 (1999); http://dx.doi.org/10.1063/1.125397 (3 pages) | Cited 11 times

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We report on optical frequency mixing in epitaxial liftoff thin films of single-crystal LiNbO3 integrated onto heterogeneous planar glass platforms. These films are found to have a nonlinear optical response comparable to that of the bulk. Second-harmonic generation is investigated as a function of crystal orientation, ion implantation, and modal and temperature dispersion. Ion implantation-induced shifts in the refractive indices are shown to be useful for achieving phase matching. © 1999 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.up Other materials
61.80.Jh Ion radiation effects

Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells

W. W. Chow, E. D. Jones, N. A. Modine, A. A. Allerman, and S. R. Kurtz

Appl. Phys. Lett. 75, 2891 (1999); http://dx.doi.org/10.1063/1.125181 (3 pages) | Cited 48 times

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The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GaInNAs/GaAs laser structures. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
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The mechanism for the high-quality single-phase growth of MnSi films on Si (111) in the presence of Sb flux

Y. Yan, M. M. Al-Jassim, K. Matsuda, H. Tatsuoka, H. Kuwabara, and S. J. Pennycook

Appl. Phys. Lett. 75, 2894 (1999); http://dx.doi.org/10.1063/1.125182 (3 pages) | Cited 2 times

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The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb–Mn–Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates. © 1999 American Institute of Physics.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Infrared extinction properties of gold nanoshells

S. J. Oldenburg, J. B. Jackson, S. L. Westcott, and N. J. Halas

Appl. Phys. Lett. 75, 2897 (1999); http://dx.doi.org/10.1063/1.125183 (3 pages) | Cited 163 times

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Gold nanoshells, nanoparticles consisting of a silica core coated with a thin gold shell, exhibit a strong optical resonance that depends sensitively on their core radius and shell thickness. Gold nanoshells have been fabricated with a peak optical extinction that can be varied across the near-infrared region of the spectrum (800 nm–2.2 μm). Multipolar plasmon resonances are clearly resolvable in the extinction spectra and agree well with electromagnetic theory. Additional resonances due to particle aggregation are also observed. The frequency agile infrared properties of these nanoparticles make them particularly attractive for a range of technologically important applications. © 1999 American Institute of Physics.
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78.30.Er Solid metals and alloys
61.46.-w Structure of nanoscale materials
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Investigation of the mechanism of titanium silicide reaction using ion-beam-assisted deposition

Jaeho Chang, Gi Bum Kim, Dong-Soo Yoon, Hong Koo Baik, Do-Joon Yoo, and Sung-Man Lee

Appl. Phys. Lett. 75, 2900 (1999); http://dx.doi.org/10.1063/1.125184 (3 pages) | Cited 1 time

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In order to promote the formation of C54 TiSi2, the suppression of C49 TiSi2 formation by ion-beam-assisted deposition of Ti film was investigated. When the Ti film was deposited without ion bombardment, C49 TiSi2 was formed at 600 °C. In contrast, in the case where the Ti film was deposited with concurrent ion bombardment, TiSi formation occurred at the same temperature. The formation of TiSi was attributed to the enhancement of both Si and Ti diffusion below 600 °C, due to grain refinement induced by Ar-ion-beam bombardment. By the adoption of ion-beam-assisted deposition to the conventional Ti silicide process, the gate line width dependence of C54 TiSi2 formation can be eliminated, since this formation is achieved via a direct interfacial reaction between TiSi and Si, and not a conversion of C49 TiSi2. © 1999 American Institute of Physics.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
73.40.Ns Metal-nonmetal contacts
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Epitaxial crystallization of amorphous SiO2 films deposited on single-crystalline α-quartz

F. Roccaforte, S. Dhar, F. Harbsmeier, and K. P. Lieb

Appl. Phys. Lett. 75, 2903 (1999); http://dx.doi.org/10.1063/1.125185 (3 pages) | Cited 11 times

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The epitaxial α-quartz thin film could be a promising material for fabricating optical devices because of its unique optical and mechanical properties and processing advantages compared to bulk materials. This letter reports on the solid-phase epitaxial growth of thin amorphous SiO2 films deposited by electron gun evaporation on single-crystalline α-quartz substrates. This was achieved by high-dose Cs+-ion implantation and subsequent thermal annealing in air. Also, a thin amorphous layer produced by Si+-ion implantation on α-quartz was epitaxially regrown, thus indicating that the epitaxy is independent of the preparation history of the amorphous layer. The results are explained on the basis of network modifications induced by alkali and oxygen in the SiO2 structure. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
61.80.Jh Ion radiation effects
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Sz Deposition technology
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology

Tunable superstructures in hydrothermally etched iron-passivated porous silicon

Xin Jian Li, Xing Hu, Yu Jia, and Yu Heng Zhang

Appl. Phys. Lett. 75, 2906 (1999); http://dx.doi.org/10.1063/1.125186 (3 pages) | Cited 15 times

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Tunable superstructures were generated by hydrothermally etching silicon wafers in the solution of HF containing ferric nitrate. The structural units of these superstructures arrayed perpendicular to the surface and their shapes could be formed as cone-like, pillar-like, or crater-pit-like through changing the solution concentration of Fe3+ in the etching process. The photoluminescence (PL) in as-prepared porous silicon was found to be independent of the microlocations chosen to carry out the PL measurements. © 1999 American Institute of Physics.
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81.05.Cy Elemental semiconductors
78.55.Mb Porous materials
81.65.Rv Passivation
81.65.Cf Surface cleaning, etching, patterning
78.55.Ap Elemental semiconductors

High-quality Ge epilayers on Si with low threading-dislocation densities

Hsin-Chiao Luan, Desmond R. Lim, Kevin K. Lee, Kevin M. Chen, Jessica G. Sandland, Kazumi Wada, and Lionel C. Kimerling

Appl. Phys. Lett. 75, 2909 (1999); http://dx.doi.org/10.1063/1.125187 (3 pages) | Cited 146 times

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High-quality Ge epilayers on Si with low threading-dislocation densities were achieved by a two-step ultrahigh vacuum/chemical-vapor-deposition process followed by cyclic thermal annealing. On large Si wafers, Ge on Si with threading-dislocation density of 2.3×107 cm−2 was obtained. Combining selective area growth with cyclic thermal annealing produced an average threading-dislocation density of 2.3×106 cm−2.We also demonstrated small mesas of Ge on Si with no threading dislocations. The process described in this letter for making high-quality Ge on Si is uncomplicated and can be easily integrated with standard Si processes. © 1999 American Institute of Physics.
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81.05.Cy Elemental semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Holotomography: Quantitative phase tomography with micrometer resolution using hard synchrotron radiation x rays

P. Cloetens, W. Ludwig, J. Baruchel, D. Van Dyck, J. Van Landuyt, J. P. Guigay, and M. Schlenker

Appl. Phys. Lett. 75, 2912 (1999); http://dx.doi.org/10.1063/1.125225 (3 pages) | Cited 229 times

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Because the refractive index for hard x rays is slightly different from unity, the optical phase of a beam is affected by transmission through an object. Phase images can be obtained with extreme instrumental simplicity by simple propagation provided the beam is coherent. But, unlike absorption, the phase is not simply related to image brightness. A holographic reconstruction procedure combining images taken at different distances from the specimen was developed. It results in quantitative phase mapping and, through association with three-dimensional reconstruction, in holotomography, the complete three-dimensional mapping of the density in a sample. This tool in the characterization of materials at the micrometer scale is uniquely suited to samples with low absorption contrast and radiation-sensitive systems. © 1999 American Institute of Physics.
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81.70.Ex Nondestructive testing: electromagnetic testing, eddy-current testing
07.85.Qe Synchrotron radiation instrumentation
06.30.Dr Mass and density
82.70.Rr Aerosols and foams
61.41.+e Polymers, elastomers, and plastics

Real-time electron-ion dynamics for photoinduced reactivation of hydrogen-passivated donors in GaAs

Yoshiyuki Miyamoto, Osamu Sugino, and Yasunori Mochizuki

Appl. Phys. Lett. 75, 2915 (1999); http://dx.doi.org/10.1063/1.125188 (3 pages) | Cited 5 times

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Photoassisted reactivation of H-passivated Si donors in GaAs has been demonstrated by first-principles calculations. In order to examine the survival of the excited state, we have applied our recently developed scheme of the ab initio molecular dynamics coupled with the time-dependent Schrödinger equation for electrons. We have found a possible electronic excitation which significantly lowers the dissociation-barrier height from 1.79 to 0.23 eV. This result explains well the recent experiment of carrier recovery by laser illumination [D. Loridant-Bernard, S. Mezière, M. Constant, N. Dupuy, B. Sombret, and J. Chevallier, Appl. Phys. Lett. 73, 644 (1998)]. © 1999 American Institute of Physics.
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71.55.Eq III-V semiconductors
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

K. W. Wong, X. T. Zhou, Frederick C. K. Au, H. L. Lai, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 75, 2918 (1999); http://dx.doi.org/10.1063/1.125189 (3 pages) | Cited 86 times

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Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current–voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices. © 1999 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Synthesis and characterization of amorphous carbon nanowires

Y. H. Tang, N. Wang, Y. F. Zhang, C. S. Lee, I. Bello, and S. T. Lee

Appl. Phys. Lett. 75, 2921 (1999); http://dx.doi.org/10.1063/1.125190 (3 pages) | Cited 23 times

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By heating a pressed tablet of graphite powder mixed with nickel in a quartz tube mounted inside a high-temperature tube furnace at 1200 °C, amorphous carbon nanowires were formed on the inner wall of the quartz tube near a copper cooling finger. Bright-field images of transmission electron microscopy show that the diameters of the nanowires are around 40 nm. Selected-area electron diffraction and Raman study reveal that the nanowires have an amorphous structure. © 1999 American Institute of Physics.  
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81.05.ub Fullerenes and related materials
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
78.30.Na Fullerenes and related materials
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.43.Er Other amorphous solids

Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate

A. Alberti, F. La Via, C. Spinella, and E. Rimini

Appl. Phys. Lett. 75, 2924 (1999); http://dx.doi.org/10.1063/1.125191 (3 pages) | Cited 2 times

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A local investigation of the structural properties of polycrystalline CoSi2 strips onto (001) Si wafers has been performed by transmission electron microscopy. CoSi2 crystal grains exhibit different behavior depending upon their position within the line. Grains close to the center of the strip are randomly oriented, while most of the grains at the edge of the strip grow epitaxially, obeying three different epitaxial relationships. Some of these grains maintain the substrate orientation with the presence of twin defects. High-resolution analysis demonstrates the presence of misfit dislocations at the CoSi2/Si interface, which accommodates the lattice mismatch. © 1999 American Institute of Physics.
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68.35.Ct Interface structure and roughness
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.-a Thin film structure and morphology

Narrow-linewidth terahertz intersubband emission from three-level systems

Benjamin S. Williams, Bin Xu, Qing Hu, and Michael R. Melloch

Appl. Phys. Lett. 75, 2927 (1999); http://dx.doi.org/10.1063/1.125192 (3 pages) | Cited 38 times

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Narrow-linewidth terahertz spontaneous emission resulting from interwell (or diagonal) intersubband transition from an electrically pumped multiple-quantum-well structure was observed. The center frequency of the emission peak is at 2.57 THz, and its full width at half maximum is 0.47 THz. The emission frequency is in good agreement with the calculated intersubband transition energy of 11.3 meV (corresponding to 2.7 THz) in a three-level system, which was designed to achieve population inversion between two radiative levels. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.45.+h Stimulated emission
78.70.Gq Microwave and radio-frequency interactions

Hot-electron far-infrared intrasubband absorption and emission in quantum wells

E. Towe, L. E. Vorobjev, S. N. Danilov, Yu. V. Kochegarov, D. A. Firsov, and D. V. Donetsky

Appl. Phys. Lett. 75, 2930 (1999); http://dx.doi.org/10.1063/1.124637 (3 pages) | Cited 3 times

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This letter reports the experimental study of hot-electron absorption and emission of far-infrared radiation in GaAs/(Al,Ga)As quantum-well structures. The emission and absorption processes discussed here are associated with intrasubband transitions; these processes are assisted by nonequilibrium optical phonons, and by scattering at rough interfaces and at impurity sites. We show how the far-infrared emission spectra of the hot-electron gas can be used to extract the electron temperature Te. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
63.20.K- Phonon interactions
71.38.-k Polarons and electron-phonon interactions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Single quantum dot states measured by optical modulation spectroscopy

N. H. Bonadeo, A. S. Lenihan, Gang Chen, J. R. Guest, D. G. Steel, D. Gammon, D. S. Katzer, and D. Park

Appl. Phys. Lett. 75, 2933 (1999); http://dx.doi.org/10.1063/1.125177 (3 pages) | Cited 6 times

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Using optical modulation spectroscopy, we report the direct observation of absorption lines from excitons localized in GaAs single quantum dot potentials. The data provide a measurement of the linewidth, resonance energy, and oscillator strength of the transitions, and show that states which decay primarily by nonradiative processes can be directly probed using this technique. The experiments establish this technique for the characterization of single quantum dot transitions, thereby complementing luminescence studies. © 1999 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.55.Cr III-V semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

In situ resistance measurements of strained carbon nanotubes

S. Paulson, M. R. Falvo, N. Snider, A. Helser, T. Hudson, A. Seeger, R. M. Taylor, R. Superfine, and S. Washburn

Appl. Phys. Lett. 75, 2936 (1999); http://dx.doi.org/10.1063/1.125193 (3 pages) | Cited 65 times

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We investigate the response of multiwalled carbon nanotubes to mechanical strain applied with an atomic force microscope probe. We find in some samples, changes in the contact resistance dominate the measured resistance change. In others, strain large enough to fracture the tube can be applied without a significant change in the contact resistance. In this case, we observe that enough force is applied to break the tube without any change in resistance until the tube fails. We have also manipulated the ends of the broken tube back in contact with each other, re-establishing a finite resistance. We observe that, in this broken configuration, the resistance of the sample is tunable to values 15–350 kΩ greater than prior to breaking. © 1999 American Institute of Physics.
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73.61.Wp Fullerenes and related materials
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Oxygen diffusion into SiO2-capped GaN during annealing

S. J. Pearton, H. Cho, J. R. LaRoche, F. Ren, R. G. Wilson, and J. W. Lee

Appl. Phys. Lett. 75, 2939 (1999); http://dx.doi.org/10.1063/1.125194 (3 pages) | Cited 13 times

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SiO2 layers were deposited on p-GaN (hole concentration 9×1017 cm−3) by inductively coupled plasma chemical vapor deposition using an 17O-enriched O2 precursor. The samples were then annealed at 500–900 °C and the SiO2 was removed. Secondary ion mass spectrometry profiling showed significant indiffusion of 17O into the GaN under these conditions, with an incorporation depth of ∼ 0.18 μm after the 900 °C anneal. The 17O diffusion profiles indicate that the high dislocation density in the GaN strongly affects the effective penetration depth. The GaN remained p type upon incorporation of the oxygen. © 1999 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
68.35.Fx Diffusion; interface formation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Properties of two-dimensional electron gas containing self-organized quantum antidots

Yu. Vasilyev, S. Suchalkin, M. Zundel, D. Heisenberg, K. Eberl, and K. von Klitzing

Appl. Phys. Lett. 75, 2942 (1999); http://dx.doi.org/10.1063/1.125195 (3 pages) | Cited 3 times

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A nonuniform two-dimensional electron gas in a heterojunction with inserted self-organized electrically inactive dots (acting as antidots) has been fabricated by molecular-beam epitaxy of AlGaAs/AlInAs/GaAs layer sequences. Transport measurements give the ratio of the transport mobility to the quantum mobility less than four, which suggests that the dominant scattering at low magnetic fields is the short-range scattering from the lateral potential of the antidots. Far-infrared cyclotron resonance (CR) spectra show an absorption mode as narrow as 0.5 cm−1 at high magnetic fields associated with the high-mobility electron gas formed between the antidot islands and confined in the lateral directions. The confinement energy of 14 cm−1 is derived from the CR spectra. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
76.40.+b Diamagnetic and cyclotron resonances
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance

Localization of the Si–H stretch vibration in amorphous silicon

C. W. Rella, M. van der Voort, A. V. Akimov, A. F. G. van der Meer, and J. I. Dijkhuis

Appl. Phys. Lett. 75, 2945 (1999); http://dx.doi.org/10.1063/1.125196 (3 pages) | Cited 12 times

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Vibrational transient grating measurements have been performed on the Si–H stretch vibration of amorphous silicon using intense picosecond infrared pulses from a free electron laser. From these data, the vibrational lifetime can be obtained directly, providing a valuable probe of the microscopic structure and dynamics in the vicinity of the Si–H bond. The stretch mode lifetime has been studied as a function of temperature and across the absorption band. Unexpectedly, the Si–H stretch vibration is demonstrated to be highly localized, and the bulk of the vibrational energy is shown to flow directly to bend vibrations, rather than to other stretch states or to host phonons. © 1999 American Institute of Physics.
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63.50.-x Vibrational states in disordered systems
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.47.-p Spectroscopy of solid state dynamics
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