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Appl. Phys. Lett. 75, 2882 (1999); http://dx.doi.org/10.1063/1.125179 (3 pages)

Actively mode-locked p-Ge laser in Faraday configuration

A. V. Muravjov1, S. H. Withers1, R. C. Strijbos1, S. G. Pavlov2, V. N. Shastin2, and R. E. Peale1

1Department of Physics, University of Central Florida, Orlando, Florida 32816
2Institute for the Physics of Microstructures, Russian Academy of Sciences, Nizhny, Novgorod, Russia

(Received 17 May 1999; accepted 13 September 1999)

Active mode locking of the far-infrared p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields applied to the laser crystal. The laser generates 200 ps pulses of 80–110 cm−1 radiation with a laser-cavity roundtrip frequency of 454 MHz. The mechanism of gain modulation by the external rf electric field is based on induced electric-field gradients inside the active crystal and requires less rf power than was found previously for Voigt geometry. © 1999 American Institute of Physics.

© 1999 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.Da

    Resonators, cavities, amplifiers, arrays, and rings

  • 42.60.Fc

    Modulation, tuning, and mode locking

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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    References

    J. N. Hovenier, A. V. Muravjov, S. G. Pavlov, V. N. Shastin, R. C. Strijbos, and W. Th. Wenkebach, Appl. Phys. Lett. 71, 443 (1997)APPLAB000071000004000443000001.

    J. N. Hovenier, T. O. Klaassen, W. Th. Wenckebach, A. V. Muravjov, S. G. Pavlov, and V. N. Shastin, Appl. Phys. Lett. 72, 1140 (1998)APPLAB000072000010001140000001.

    A. V. Muravjov, R. C. Strijbos, C. J. Fredricksen, S. H. Withers, W. Trimble, S. G. Pavlov, V. N. Shastin, and R. E. Peale, Appl. Phys. Lett. 74, 167 (1999)APPLAB000074000002000167000001.


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