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Appl. Phys. Lett. 75, 2882 (1999); http://dx.doi.org/10.1063/1.125179 (3 pages)
Actively mode-locked p-Ge laser in Faraday configuration
(Received 17 May 1999; accepted 13 September 1999)
Active mode locking of the far-infrared p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields applied to the laser crystal. The laser generates 200 ps pulses of 80–110 cm−1 radiation with a laser-cavity roundtrip frequency of 454 MHz. The mechanism of gain modulation by the external rf electric field is based on induced electric-field gradients inside the active crystal and requires less rf power than was found previously for Voigt geometry. © 1999 American Institute of Physics.
© 1999 American Institute of Physics
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