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5 Jul 1999

Volume 75, Issue 1, pp. 1-147

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Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope

M. R. Phillips, M. Toth, and D. Drouin

Appl. Phys. Lett. 75, 76 (1999); http://dx.doi.org/10.1063/1.124281 (3 pages) | Cited 5 times

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We present a method for imaging depletion layers using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. GSED images of a p-n junction were obtained from a Si P+PN power diode. Behavior of the junction contrast as a function of imaging conditions is unrelated to reported GSED contrast formation mechanisms [ A. L. Fletcher, B. L. Thiel, and A. M. Donald, J. Phys. D 30, 2249 (1997)]. Optimum imaging conditions are presented, and the contrast behavior is interpreted in terms of a previously unreported induced current component in GSED images. The presented technique is unique as it will enable imaging of depletion layers in uncoated semiconductor/oxide devices in controlled gaseous environments at elevated specimen temperatures. © 1999 American Institute of Physics.
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73.61.Cw Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopy

Huajie Chen, R. M. Feenstra, P. G. Piva, R. D. Goldberg, I. V. Mitchell, G. C. Aers, P. J. Poole, and S. Charbonneau

Appl. Phys. Lett. 75, 79 (1999); http://dx.doi.org/10.1063/1.124282 (3 pages) | Cited 27 times

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Cross-sectional scanning tunneling microscopy is used to study InGaAs/InP quantum-well intermixing produced by phosphorus implantation. When phosphorus ions are implanted in a cap layer in front of the quantum wells (in contrast to earlier work involving implantation through the wells), clear strain development is observed at the interfaces between quantum well and barrier layers after annealing. This is interpreted in terms of enhanced group-V compared to group-III interdiffusion. © 1999 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

F. Semond, B. Damilano, S. Vézian, N. Grandjean, M. Leroux, and J. Massies

Appl. Phys. Lett. 75, 82 (1999); http://dx.doi.org/10.1063/1.124283 (3 pages) | Cited 27 times

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We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction (RHEED), scanning electron microscopy, and x-ray diffraction. Films having compact morphologies and flat surfaces are obtained and RHEED intensity oscillations are demonstrated for GaN and (Al, Ga)N alloys indicating two-dimensional growth. This has been applied to the growth of AlGaN/GaN quantum well (QW) structures. Low-temperature photoluminescence (PL) spectra of GaN are dominated by a strong and narrow (full width at half maximum=5 meV) band edge luminescence intensity at 3.471 eV assigned to donor bound exciton recombination. PL properties of AlGaN/GaN QW are also very similar to those obtained on equivalent structures grown on sapphire. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.35.Gg Exciton-mediated interactions
68.35.B- Structure of clean surfaces (and surface reconstruction)

Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution

I. Mukhametzhanov, Z. Wei, R. Heitz, and A. Madhukar

Appl. Phys. Lett. 75, 85 (1999); http://dx.doi.org/10.1063/1.124284 (3 pages) | Cited 71 times

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The later stages of the evolution of epitaxical island quantum dots are examined systematically for InAs depositions on GaAs(001) following the conventional continuous deposition mode and an approach introduced here called punctuated island growth (PIG). The comparative study provides clear structural and optical evidence for a change in InAs island shape at a self-limiting lateral size, first reached for depositions ∼2 ML. The PIG approach has also allowed realization of the narrowest reported inhomogeneous linewidth of 23 meV for low temperature photoluminescence from a single layer of binary InAs/GaAs quantum dots. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Doping in cubic silicon–carbide

V. A. Gubanov and C. Y. Fong

Appl. Phys. Lett. 75, 88 (1999); http://dx.doi.org/10.1063/1.124285 (3 pages) | Cited 6 times

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We studied the energetics and the properties of impurity states that result from doping cubic silicon–carbide (3C–SiC) with aluminum (Al), boron (B), and nitrogen (N) atoms using the tight-binding linear combination of muffin-tin orbital atomic sphere approximation method. For Al doping, it is only favorable to substitute Al for Si atoms. The corresponding hole states contribute to a partially filled weak peak near the Fermi energy. For B doping, it is possible to replace either Si or C atoms in the crystal. When a B atom is at a Si site, the hole states exhibit behavior similar to the case of Al doping. However, when a B atom is at a C site, the hole states form a partially filled strong peak above the Fermi energy. This localized feature is explained in terms of the screening effect of the neighboring atoms. For n-type doping, a N atom can enter either the Si or C site. The latter site is more energetically favorable. Furthermore, the corresponding donor states form deep impurity states within the gap. In contrast, when a N atom is at a Si site, shallow donor states are formed. © 1999 American Institute of Physics.
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71.55.Ht Other nonmetals
61.72.up Other materials
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

Amorphization of single-crystalline silicon by thermal-energy atomic hydrogen

J. H. Kang, S. K. Jo, B. Gong, P. Parkinson, D. E. Brown, J. M. White, and J. G. Ekerdt

Appl. Phys. Lett. 75, 91 (1999); http://dx.doi.org/10.1063/1.124286 (3 pages) | Cited 5 times

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Si(100)-(2×1) was exposed to gas-phase atomic hydrogen, H(g), at various substrate temperatures Ts between 115 and 300 K. No low-energy electron diffraction patterns could be obtained from such hydrogenated surfaces. In temperature-programmed desorption measurements, SiHx(x = 1–3) radical species as well as SiH4 desorbed at Ts between 600 and 1000 K, in addition to β1- and β2–H2 desorption peaks. Combined together, the results indicate that amorphous hydrogenated silicon (a-Si:H) films are formed. While surface etching competes, a-Si:H formation dominates. Once formed, a-Si:H further suppresses etching. © 1999 American Institute of Physics.
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81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Optical switching in a superconductor–semiconductor–superconductor Josephson junction

G. Bastian, E. O. Göbel, J. Schmitz, M. Walther, and J. Wagner

Appl. Phys. Lett. 75, 94 (1999); http://dx.doi.org/10.1063/1.124287 (3 pages) | Cited 2 times

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We have fabricated Josephson junctions with a two-dimensional electron gas based on InAs/AlSb/GaSb as the barrier. The behavior of the junction during and after illumination with different wavelengths was studied. Due to a persistent positive and negative photoeffect, depending on the excitation wavelength, the carrier density and hence the critical current as well as the normal resistance could be switched between two different stable states. © 1999 American Institute of Physics.
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85.25.Cp Josephson devices
73.50.Pz Photoconduction and photovoltaic effects
74.50.+r Tunneling phenomena; Josephson effects
74.25.Sv Critical currents
73.61.Ey III-V semiconductors
85.60.-q Optoelectronic devices

Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation

Wai Lek Ng, M. P. Temple, P. A. Childs, F. Wellhofer, and K. P. Homewood

Appl. Phys. Lett. 75, 97 (1999); http://dx.doi.org/10.1063/1.124324 (3 pages) | Cited 7 times

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Strong room-temperature photoluminescence (PL) peaks of Er3+ (4I13/2→4I15/2) ions at ∼1.535 μm are obtained from Er-doped thin-film Si layers prepared by laser ablation. The Si sample was found to produce optimum photoluminescence peaks at an annealing temperature of about 450 °C. Experimental results also shows that the thermal quenching of the luminescence intensity from 80 K to room temperature is a factor of 2.5 only. PL excitation measurements reveal that the Er luminescence is significantly excited via the silicon band edge. The lifetime of the luminescence from the Si:Er samples is 90±10 μs. © 1999 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
81.15.Fg Pulsed laser ablation deposition

Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices

Z.-H. Cai, W. Rodrigues, P. Ilinski, D. Legnini, B. Lai, W. Yun, E. D. Isaacs, K. E. Lutterodt, J. Grenko, R. Glew, S. Sputz, J. Vandenberg, R. People, M. A. Alam, M. Hybertsen, et al.

Appl. Phys. Lett. 75, 100 (1999); http://dx.doi.org/10.1063/1.124288 (3 pages) | Cited 15 times

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Synchrotron-based x-ray microbeam techniques have been used to map crystallographic strain and multilayer thickness in micro-optoelectronic devices produced with the selective area growth technique. Our main results show that growth enhancements in InGaAsP multilayer device material are different for well and barrier material. Comparison with a vapor-phase model for selective area growth suggests that this difference is due to different vapor-phase incorporation rates for the group III metals. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Radiative emission rate modulation in semiconductor heterostructures coupled to a mirror: A probe of ballistic electron mean free path

R. Teissier, D. Sicault, A. Goujon, J. L. Pelouard, F. Pardo, and F. Mollot

Appl. Phys. Lett. 75, 103 (1999); http://dx.doi.org/10.1063/1.124289 (3 pages) | Cited 2 times

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Absolute electroluminescence intensities of InP/InGaAs heterostructures are monitored as a function of the position of the active layer from a mirror deposited on the semiconductor surface. The strong observed modulation is explained in terms of confinement of the electromagnetic field in the semi-infinite cavity delimited by the reflecting interface. This effect is shown to be a powerful probe of electron spatial distributions in the direction perpendicular to the layer plane, which allows minority ballistic electron mean free path, and hence femtosecond scattering times, to be precisely measured. © 1999 American Institute of Physics.
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78.60.Fi Electroluminescence
78.47.-p Spectroscopy of solid state dynamics
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
73.50.Fq High-field and nonlinear effects

Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch

Appl. Phys. Lett. 75, 106 (1999); http://dx.doi.org/10.1063/1.124290 (3 pages) | Cited 56 times

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We present cross-sectional scanning-tunneling microscopy results of threefold stacked InAs quantum dots prepared by metal-organic chemical-vapor deposition at 485 °C and a growth rate of 0.18 nm/s. The dots consist of stoichiometrically pure InAs and show a layer-dependent size. The images indicate a prismatic dot shape with {101} and additional {111} side faces as well as a (001) top face. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Electron transport in starburst phenylquinoxalines

M. Redecker, D. D. C. Bradley, M. Jandke, and P. Strohriegl

Appl. Phys. Lett. 75, 109 (1999); http://dx.doi.org/10.1063/1.124291 (3 pages) | Cited 24 times

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The electron transport properties of two soluble tris-phenylquinoxalines have been investigated by the time-of-flight technique. The electron mobilities for both compounds approach 10−4 cm2/V s at electric fields of 106 V/cm at room temperature. These are high values for isotropic electron transport materials suitable for use in organic light emitting diodes. © 1999 American Institute of Physics.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Fq High-field and nonlinear effects
73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
85.60.Jb Light-emitting devices

Strong isotope effects in the dissociation kinetics of Si–H and Si–D complexes in GaAs under ultraviolet illumination

J. Chevallier, M. Barbé, E. Constant, D. Loridant-Bernard, and M. Constant

Appl. Phys. Lett. 75, 112 (1999); http://dx.doi.org/10.1063/1.124292 (3 pages) | Cited 16 times

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Under ultraviolet (UV) illumination of GaAs with photon energies above 3.5 eV, Si–H complexes are known to be efficiently dissociated at room temperature. Studying the dissociation kinetics of Si–H and Si–D complexes in GaAs, we have observed that, for a given incident UV photon density, the concentration of dissociated Si–D complexes is 10–20 times below the concentration of dissociated Si–H complexes. This strong isotope effect is discussed under the light of recent excitation models of Si–H(D) bonds at the surface of silicon and at the Si/SiO2 interface. © 1999 American Institute of Physics.
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82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
81.05.Ea III-V semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
82.20.Tr Kinetic isotope effects including muonium

Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon

M. Ramamoorthy and S. T. Pantelides

Appl. Phys. Lett. 75, 115 (1999); http://dx.doi.org/10.1063/1.124293 (3 pages) | Cited 17 times

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We report first-principles calculations in terms of which we propose a unified description of the atomic dynamics that underlie the nucleation and growth of SiO2 precipitates in Si and the oxidation of Si thin films. We identify a mechanism for the observed emission of Si interstitials and show that it eliminates electrically active defects without introducing dangling bonds. The results provide an explanation for the low defect density at the Si–SiO2 interface and suggest a novel family of electrically active interface defects that are akin to the “thermal donors” in Si. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
81.05.Cy Elemental semiconductors
68.35.Ct Interface structure and roughness
61.72.J- Point defects and defect clusters
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Indications of antiferromagnetic interlayer coupling in La2/3Ba1/3MnO3/LaNiO3 multilayers

K. R. Nikolaev, A. Bhattacharya, P. A. Kraus, V. A. Vas’ko, W. K. Cooley, and A. M. Goldman

Appl. Phys. Lett. 75, 118 (1999); http://dx.doi.org/10.1063/1.124294 (3 pages) | Cited 23 times

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Multilayers consisting of the perovskite metallic oxides, ferromagnetic La2/3Ba1/3MnO3 (LBMO) and paramagnetic LaNiO3 (LNO) have been grown by ozone-assisted molecular beam epitaxy. Structural characterization using in situ reflection high-energy electron diffraction and high-resolution x-ray diffraction reveal a very high degree of crystalline order. Magnetization and hysteresis measurements show evidence of antiferromagnetic coupling between LBMO layers when the LNO spacer is 15 Å or less in thickness. © 1999 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Extremely underdamped Josephson junctions for low noise applications

B. Ruggiero, C. Granata, E. Esposito, M. Russo, and P. Silvestrini

Appl. Phys. Lett. 75, 121 (1999); http://dx.doi.org/10.1063/1.124295 (3 pages) | Cited 6 times

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We present a design of extremely underdamped Josephson junctions either for use in experiments in the quantum limit or for devices using the switching dynamics of the junction, when a low noise level is mandatory. High resistance molybdenum meander lines integrated with the junction allow one to increase the insulation of the sample from its electromagnetic environment. We report an experimental study of the effective dissipation relevant in the thermally activated supercurrent decay presenting evidence of a substantial reduction of the dissipation level at low temperature. © 1999 American Institute of Physics.
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85.25.Cp Josephson devices
07.50.Hp Electrical noise and shielding equipment
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.25.Am Superconducting device characterization, design, and modeling

Vacuum-tunneling magnetoresistance: The role of spin-polarized surface states

R. Wiesendanger, M. Bode, and M. Getzlaff

Appl. Phys. Lett. 75, 124 (1999); http://dx.doi.org/10.1063/1.124296 (3 pages) | Cited 15 times

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We have studied magnetoresistance effects in Fe–vacuum–Gd tunnel junctions as a function of the applied bias voltage by using a scanning tunneling microscope operated under ultra-high-vacuum conditions. We found that the vacuum-tunneling magnetoresistance (VTMR) can be maximized by tunneling into highly spin-polarized surface states. By tuning the applied bias to the energetic positions of the spin-polarized surface states, a VTMR response as much as 31% at 70 K was obtained. This result is explained in terms of an enhancement caused by the spin-polarized surface state and a suppression of spin-flip tunneling processes compared to tunnel junctions with oxide barriers. © 1999 American Institute of Physics.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.40.Gk Tunneling
73.20.At Surface states, band structure, electron density of states
75.70.Ak Magnetic properties of monolayers and thin films

Superconducting tunneling as a probe of sputtered oxide barriers

C. L. Platt, A. S. Katz, R. C. Dynes, and A. E. Berkowitz

Appl. Phys. Lett. 75, 127 (1999); http://dx.doi.org/10.1063/1.124297 (3 pages) | Cited 3 times

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The tunneling properties of sputtered oxide barriers were studied in Pb/oxide/ferromagnet junctions. The initial oxide/ferromagnet bilayer was made without breaking vacuum. The bilayer was exposed to atmosphere before the deposition of a Pb counterelectrode in a separate vacuum chamber. I–V curves and conductance measurements at 1.5 K confirmed the presence of single-step, elastic tunneling in these structures. Separate experiments involving gold bottom electrodes, variation of exposure times in air between bilayer and Pb depositions, and plasma oxidation proved that the oxide layer is permeable, allowing for oxidation of the ferromagnetic base electrode. This revealed that the tunneling channels were due to the contribution of small-area junctions at thermally oxidized “pinhole” sites on the bottom electrode. © 1999 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.50.+r Tunneling phenomena; Josephson effects
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
81.15.Cd Deposition by sputtering
81.65.Mq Oxidation
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Electric fatigue properties of sol–gel-derived Pb(Zr, Ti)O3/PbZrO3 multilayered thin films

Jae Hyuk Jang and Ki Hyun Yoon

Appl. Phys. Lett. 75, 130 (1999); http://dx.doi.org/10.1063/1.124256 (3 pages) | Cited 31 times

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The effect of various stacking sequences of sol–gel-prepared Pb(Zr, Ti)O3/PbZrO3 (PZT/PZ) multilayered thin films on the electric fatigue properties was investigated. The antiferroelectric layer between the Pt electrode and the ferroelectric layers acted as a barrier to fatigue. The initial P∗r-P∧r (about 5 μC/cm2) of the PZ(1 layer)/PZT(5 layers)/PZ(1 layer) film remained nearly unchanged after 109 cycles of a ±10 V square-wave pulse. The leakage current of the multilayered films did not show any change during 109 cycles. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.22.Ej Polarization and depolarization
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.55.-g Dielectric thin films
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Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor

Shiou-Ying Cheng, Wen-Chau Liu, Wen-Lung Chang, Hsi-Jen Pan, Wei-Chou Wang, Jing-Yuh Chen, Shun-Ching Feng, and Kuo-Hui Yu

Appl. Phys. Lett. 75, 133 (1999); http://dx.doi.org/10.1063/1.124298 (3 pages) | Cited 2 times

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An AlInAs/GaInAs superlatticed resonant-tunneling transistor (SRTT) is fabricated and demonstrated. A five-period AlInAs/GaInAs superlattice is used to provide resonant tunneling (RT) and confinement of minority carriers. Experimentally, an interesting impulse-like multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SRTT device at room temperature. It is believed that the N-shaped MNDR results mainly from RT within the five-period AlInAs/GaInAs superlattice. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.30.Tv Field effect devices
73.23.Hk Coulomb blockade; single-electron tunneling
85.30.Pq Bipolar transistors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Low-temperature thermopower in nanostructured silver

X. F. Zhu, H. F. Zhang, J. S. Williams, R. P. Wang, L. D. Zhang, and X. J. Wu

Appl. Phys. Lett. 75, 136 (1999); http://dx.doi.org/10.1063/1.124299 (3 pages) | Cited 2 times

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The variation of thermopower with temperature from 77 to 300 K has been measured in samples of nanostructured silver. It is observed that a dramatic change occurs in the thermopower of the nanostructured silver as grain size is reduced into the nanoscale region. In particular, with the grain size decreasing to the nanometer scale, the slope of the electron-diffusion component of thermopower as a function of temperature increases and the phonon-drag component of thermopower is shifted to lower temperatures. The changes in the thermopower correlate well with changes in the microhardness. © 1999 American Institute of Physics.
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72.15.Jf Thermoelectric and thermomagnetic effects
71.38.-k Polarons and electron-phonon interactions

Fabrication of lateral single-electron tunneling structures by field-induced manipulation of Ag nanoclusters on a silicon surface

Kang-Ho Park, Mincheol Shin, Jeong Sook Ha, Wan Soo Yun, and Young-Jo Ko

Appl. Phys. Lett. 75, 139 (1999); http://dx.doi.org/10.1063/1.124326 (3 pages) | Cited 8 times

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Nanostructures composed of Ag clusters on an Sb-terminated Si surface were designed in a highly controlled manner and the electric conduction through Ag nanoclusters to the silicon substrate was investigated by using a scanning tunneling microscopy/spectroscopy. It was found that the lateral conduction between neighboring Ag clusters significantly contributed to the tunneling current–voltage characteristics, and the metallic single-electron tunneling structures employing the lateral conduction channels at room temperature can be fabricated via a field-induced manipulation of Ag clusters. © 1999 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.61.At Metal and metallic alloys
73.40.Ns Metal-nonmetal contacts
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Surface acoustic wave impedance element filters for 5 GHz

S. Lehtonen, J. Koskela, M. M. Salomaa, V. P. Plessky, M. Honkanen, and J. Turunen

Appl. Phys. Lett. 75, 142 (1999); http://dx.doi.org/10.1063/1.124300 (3 pages) | Cited 7 times

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Surface acoustic wave (SAW) impedance element filter prototypes operating in the 5 GHz range are designed, fabricated, and characterized. The patterning is carried out using direct-writing electron-beam lithography and the lift-off technique. The periodicity p of the resonators in the filters for the 5 GHz regime is on the order of 400 nm. Despite the nonideal finger profile, a low minimum insertion loss of 6.5 dB and a flat passband are measured. Our results suggest that SAW technology itself presents no fundamental physical limitations for its extension into the 5 GHz range. © 1999 American Institute of Physics.
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84.30.Vn Filters
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
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Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. 71, 3543 (1997)]

P. A. M. Rodrigues, F. Cerdeira, and J. C. Bean

Appl. Phys. Lett. 75, 145 (1999); http://dx.doi.org/10.1063/1.124257 (2 pages) | Cited 3 times

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© 1999 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Cy Elemental semiconductors
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Erratum: “Suppressed diffusion of boron and carbon in carbon-rich silicon” [Appl. Phys. Lett. 73, 1682 (1998)]

H. Rücker, B. Heinemann, W. Röpke, R. Kurps, D. Krüger, G. Lippert, and H. J. Osten

Appl. Phys. Lett. 75, 147 (1999); http://dx.doi.org/10.1063/1.124301 (1 page) | Cited 1 time

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© 1999 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
61.72.uf Ge and Si
99.10.Cd Errata
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