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5 Jul 1999

Volume 75, Issue 1, pp. 1-147

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Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. 71, 3543 (1997)]

P. A. M. Rodrigues, F. Cerdeira, and J. C. Bean

Appl. Phys. Lett. 75, 145 (1999); http://dx.doi.org/10.1063/1.124257 (2 pages) | Cited 3 times

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© 1999 American Institute of Physics.

Show PACS

78.66.Db	Elemental semiconductors and insulators
78.55.Ap	Elemental semiconductors
81.15.Hi	Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k	Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Cy	Elemental semiconductors

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