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5 Jul 1999

Volume 75, Issue 1, pp. 1-147

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Origin of the time dependence of wet oxidation of AlGaAs

Carol I. H. Ashby, Monica M. Bridges, Andrew A. Allerman, B. E. Hammons, and Hong Q. Hou

Appl. Phys. Lett. 75, 73 (1999); http://dx.doi.org/10.1063/1.124280 (3 pages) | Cited 23 times

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The time dependence of the wet oxidation of high-Al-content AlGaAs can be either linear, indicating reaction-rate limitation, or parabolic, indicating diffusion-limited rates. The transition from linear to parabolic time dependence can be explained by the increased rate of the formation of intermediate As2O3 versus its reduction to elemental As. A steadily increasing thickness of the As2O3-containing region at the oxidation front will shift the process from the linear to the parabolic regime. This shift from reaction-rate limited (linear) to diffusion-limited (parabolic) time dependence is favored by increasing temperature or increasing Al mole fraction. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
81.05.Ea III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
78.66.Fd III-V semiconductors

Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope

M. R. Phillips, M. Toth, and D. Drouin

Appl. Phys. Lett. 75, 76 (1999); http://dx.doi.org/10.1063/1.124281 (3 pages) | Cited 5 times

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We present a method for imaging depletion layers using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. GSED images of a p-n junction were obtained from a Si P+PN power diode. Behavior of the junction contrast as a function of imaging conditions is unrelated to reported GSED contrast formation mechanisms [ A. L. Fletcher, B. L. Thiel, and A. M. Donald, J. Phys. D 30, 2249 (1997)]. Optimum imaging conditions are presented, and the contrast behavior is interpreted in terms of a previously unreported induced current component in GSED images. The presented technique is unique as it will enable imaging of depletion layers in uncoated semiconductor/oxide devices in controlled gaseous environments at elevated specimen temperatures. © 1999 American Institute of Physics.
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73.61.Cw Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopy

Huajie Chen, R. M. Feenstra, P. G. Piva, R. D. Goldberg, I. V. Mitchell, G. C. Aers, P. J. Poole, and S. Charbonneau

Appl. Phys. Lett. 75, 79 (1999); http://dx.doi.org/10.1063/1.124282 (3 pages) | Cited 27 times

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Cross-sectional scanning tunneling microscopy is used to study InGaAs/InP quantum-well intermixing produced by phosphorus implantation. When phosphorus ions are implanted in a cap layer in front of the quantum wells (in contrast to earlier work involving implantation through the wells), clear strain development is observed at the interfaces between quantum well and barrier layers after annealing. This is interpreted in terms of enhanced group-V compared to group-III interdiffusion. © 1999 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects
61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

F. Semond, B. Damilano, S. Vézian, N. Grandjean, M. Leroux, and J. Massies

Appl. Phys. Lett. 75, 82 (1999); http://dx.doi.org/10.1063/1.124283 (3 pages) | Cited 27 times

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We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction (RHEED), scanning electron microscopy, and x-ray diffraction. Films having compact morphologies and flat surfaces are obtained and RHEED intensity oscillations are demonstrated for GaN and (Al, Ga)N alloys indicating two-dimensional growth. This has been applied to the growth of AlGaN/GaN quantum well (QW) structures. Low-temperature photoluminescence (PL) spectra of GaN are dominated by a strong and narrow (full width at half maximum=5 meV) band edge luminescence intensity at 3.471 eV assigned to donor bound exciton recombination. PL properties of AlGaN/GaN QW are also very similar to those obtained on equivalent structures grown on sapphire. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.35.Gg Exciton-mediated interactions
68.35.B- Structure of clean surfaces (and surface reconstruction)

Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution

I. Mukhametzhanov, Z. Wei, R. Heitz, and A. Madhukar

Appl. Phys. Lett. 75, 85 (1999); http://dx.doi.org/10.1063/1.124284 (3 pages) | Cited 71 times

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The later stages of the evolution of epitaxical island quantum dots are examined systematically for InAs depositions on GaAs(001) following the conventional continuous deposition mode and an approach introduced here called punctuated island growth (PIG). The comparative study provides clear structural and optical evidence for a change in InAs island shape at a self-limiting lateral size, first reached for depositions ∼2 ML. The PIG approach has also allowed realization of the narrowest reported inhomogeneous linewidth of 23 meV for low temperature photoluminescence from a single layer of binary InAs/GaAs quantum dots. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Doping in cubic silicon–carbide

V. A. Gubanov and C. Y. Fong

Appl. Phys. Lett. 75, 88 (1999); http://dx.doi.org/10.1063/1.124285 (3 pages) | Cited 6 times

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We studied the energetics and the properties of impurity states that result from doping cubic silicon–carbide (3C–SiC) with aluminum (Al), boron (B), and nitrogen (N) atoms using the tight-binding linear combination of muffin-tin orbital atomic sphere approximation method. For Al doping, it is only favorable to substitute Al for Si atoms. The corresponding hole states contribute to a partially filled weak peak near the Fermi energy. For B doping, it is possible to replace either Si or C atoms in the crystal. When a B atom is at a Si site, the hole states exhibit behavior similar to the case of Al doping. However, when a B atom is at a C site, the hole states form a partially filled strong peak above the Fermi energy. This localized feature is explained in terms of the screening effect of the neighboring atoms. For n-type doping, a N atom can enter either the Si or C site. The latter site is more energetically favorable. Furthermore, the corresponding donor states form deep impurity states within the gap. In contrast, when a N atom is at a Si site, shallow donor states are formed. © 1999 American Institute of Physics.
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71.55.Ht Other nonmetals
61.72.up Other materials
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)

Amorphization of single-crystalline silicon by thermal-energy atomic hydrogen

J. H. Kang, S. K. Jo, B. Gong, P. Parkinson, D. E. Brown, J. M. White, and J. G. Ekerdt

Appl. Phys. Lett. 75, 91 (1999); http://dx.doi.org/10.1063/1.124286 (3 pages) | Cited 5 times

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Si(100)-(2×1) was exposed to gas-phase atomic hydrogen, H(g), at various substrate temperatures Ts between 115 and 300 K. No low-energy electron diffraction patterns could be obtained from such hydrogenated surfaces. In temperature-programmed desorption measurements, SiHx(x = 1–3) radical species as well as SiH4 desorbed at Ts between 600 and 1000 K, in addition to β1- and β2–H2 desorption peaks. Combined together, the results indicate that amorphous hydrogenated silicon (a-Si:H) films are formed. While surface etching competes, a-Si:H formation dominates. Once formed, a-Si:H further suppresses etching. © 1999 American Institute of Physics.
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81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Optical switching in a superconductor–semiconductor–superconductor Josephson junction

G. Bastian, E. O. Göbel, J. Schmitz, M. Walther, and J. Wagner

Appl. Phys. Lett. 75, 94 (1999); http://dx.doi.org/10.1063/1.124287 (3 pages) | Cited 2 times

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We have fabricated Josephson junctions with a two-dimensional electron gas based on InAs/AlSb/GaSb as the barrier. The behavior of the junction during and after illumination with different wavelengths was studied. Due to a persistent positive and negative photoeffect, depending on the excitation wavelength, the carrier density and hence the critical current as well as the normal resistance could be switched between two different stable states. © 1999 American Institute of Physics.
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85.25.Cp Josephson devices
73.50.Pz Photoconduction and photovoltaic effects
74.50.+r Tunneling phenomena; Josephson effects
74.25.Sv Critical currents
73.61.Ey III-V semiconductors
85.60.-q Optoelectronic devices

Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation

Wai Lek Ng, M. P. Temple, P. A. Childs, F. Wellhofer, and K. P. Homewood

Appl. Phys. Lett. 75, 97 (1999); http://dx.doi.org/10.1063/1.124324 (3 pages) | Cited 7 times

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Strong room-temperature photoluminescence (PL) peaks of Er3+ (4I13/2→4I15/2) ions at ∼1.535 μm are obtained from Er-doped thin-film Si layers prepared by laser ablation. The Si sample was found to produce optimum photoluminescence peaks at an annealing temperature of about 450 °C. Experimental results also shows that the thermal quenching of the luminescence intensity from 80 K to room temperature is a factor of 2.5 only. PL excitation measurements reveal that the Er luminescence is significantly excited via the silicon band edge. The lifetime of the luminescence from the Si:Er samples is 90±10 μs. © 1999 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
81.15.Fg Pulsed laser ablation deposition

Synchrotron x-ray microdiffraction diagnostics of multilayer optoelectronic devices

Z.-H. Cai, W. Rodrigues, P. Ilinski, D. Legnini, B. Lai, W. Yun, E. D. Isaacs, K. E. Lutterodt, J. Grenko, R. Glew, S. Sputz, J. Vandenberg, R. People, M. A. Alam, M. Hybertsen, et al.

Appl. Phys. Lett. 75, 100 (1999); http://dx.doi.org/10.1063/1.124288 (3 pages) | Cited 15 times

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Synchrotron-based x-ray microbeam techniques have been used to map crystallographic strain and multilayer thickness in micro-optoelectronic devices produced with the selective area growth technique. Our main results show that growth enhancements in InGaAsP multilayer device material are different for well and barrier material. Comparison with a vapor-phase model for selective area growth suggests that this difference is due to different vapor-phase incorporation rates for the group III metals. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Radiative emission rate modulation in semiconductor heterostructures coupled to a mirror: A probe of ballistic electron mean free path

R. Teissier, D. Sicault, A. Goujon, J. L. Pelouard, F. Pardo, and F. Mollot

Appl. Phys. Lett. 75, 103 (1999); http://dx.doi.org/10.1063/1.124289 (3 pages) | Cited 2 times

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Absolute electroluminescence intensities of InP/InGaAs heterostructures are monitored as a function of the position of the active layer from a mirror deposited on the semiconductor surface. The strong observed modulation is explained in terms of confinement of the electromagnetic field in the semi-infinite cavity delimited by the reflecting interface. This effect is shown to be a powerful probe of electron spatial distributions in the direction perpendicular to the layer plane, which allows minority ballistic electron mean free path, and hence femtosecond scattering times, to be precisely measured. © 1999 American Institute of Physics.
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78.60.Fi Electroluminescence
78.47.-p Spectroscopy of solid state dynamics
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
73.50.Fq High-field and nonlinear effects

Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch

Appl. Phys. Lett. 75, 106 (1999); http://dx.doi.org/10.1063/1.124290 (3 pages) | Cited 56 times

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We present cross-sectional scanning-tunneling microscopy results of threefold stacked InAs quantum dots prepared by metal-organic chemical-vapor deposition at 485 °C and a growth rate of 0.18 nm/s. The dots consist of stoichiometrically pure InAs and show a layer-dependent size. The images indicate a prismatic dot shape with {101} and additional {111} side faces as well as a (001) top face. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Electron transport in starburst phenylquinoxalines

M. Redecker, D. D. C. Bradley, M. Jandke, and P. Strohriegl

Appl. Phys. Lett. 75, 109 (1999); http://dx.doi.org/10.1063/1.124291 (3 pages) | Cited 24 times

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The electron transport properties of two soluble tris-phenylquinoxalines have been investigated by the time-of-flight technique. The electron mobilities for both compounds approach 10−4 cm2/V s at electric fields of 106 V/cm at room temperature. These are high values for isotropic electron transport materials suitable for use in organic light emitting diodes. © 1999 American Institute of Physics.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Fq High-field and nonlinear effects
73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
85.60.Jb Light-emitting devices

Strong isotope effects in the dissociation kinetics of Si–H and Si–D complexes in GaAs under ultraviolet illumination

J. Chevallier, M. Barbé, E. Constant, D. Loridant-Bernard, and M. Constant

Appl. Phys. Lett. 75, 112 (1999); http://dx.doi.org/10.1063/1.124292 (3 pages) | Cited 16 times

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Under ultraviolet (UV) illumination of GaAs with photon energies above 3.5 eV, Si–H complexes are known to be efficiently dissociated at room temperature. Studying the dissociation kinetics of Si–H and Si–D complexes in GaAs, we have observed that, for a given incident UV photon density, the concentration of dissociated Si–D complexes is 10–20 times below the concentration of dissociated Si–H complexes. This strong isotope effect is discussed under the light of recent excitation models of Si–H(D) bonds at the surface of silicon and at the Si/SiO2 interface. © 1999 American Institute of Physics.
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82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
81.05.Ea III-V semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
82.20.Tr Kinetic isotope effects including muonium

Atomic dynamics and defect evolution during oxygen precipitation and oxidation of silicon

M. Ramamoorthy and S. T. Pantelides

Appl. Phys. Lett. 75, 115 (1999); http://dx.doi.org/10.1063/1.124293 (3 pages) | Cited 17 times

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We report first-principles calculations in terms of which we propose a unified description of the atomic dynamics that underlie the nucleation and growth of SiO2 precipitates in Si and the oxidation of Si thin films. We identify a mechanism for the observed emission of Si interstitials and show that it eliminates electrically active defects without introducing dangling bonds. The results provide an explanation for the low defect density at the Si–SiO2 interface and suggest a novel family of electrically active interface defects that are akin to the “thermal donors” in Si. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
81.05.Cy Elemental semiconductors
68.35.Ct Interface structure and roughness
61.72.J- Point defects and defect clusters
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