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5 Jul 1999

Volume 75, Issue 1, pp. 1-147

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Indications of antiferromagnetic interlayer coupling in La2/3Ba1/3MnO3/LaNiO3 multilayers

K. R. Nikolaev, A. Bhattacharya, P. A. Kraus, V. A. Vas’ko, W. K. Cooley, and A. M. Goldman

Appl. Phys. Lett. 75, 118 (1999); http://dx.doi.org/10.1063/1.124294 (3 pages) | Cited 23 times

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Multilayers consisting of the perovskite metallic oxides, ferromagnetic La2/3Ba1/3MnO3 (LBMO) and paramagnetic LaNiO3 (LNO) have been grown by ozone-assisted molecular beam epitaxy. Structural characterization using in situ reflection high-energy electron diffraction and high-resolution x-ray diffraction reveal a very high degree of crystalline order. Magnetization and hysteresis measurements show evidence of antiferromagnetic coupling between LBMO layers when the LNO spacer is 15 Å or less in thickness. © 1999 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Extremely underdamped Josephson junctions for low noise applications

B. Ruggiero, C. Granata, E. Esposito, M. Russo, and P. Silvestrini

Appl. Phys. Lett. 75, 121 (1999); http://dx.doi.org/10.1063/1.124295 (3 pages) | Cited 6 times

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We present a design of extremely underdamped Josephson junctions either for use in experiments in the quantum limit or for devices using the switching dynamics of the junction, when a low noise level is mandatory. High resistance molybdenum meander lines integrated with the junction allow one to increase the insulation of the sample from its electromagnetic environment. We report an experimental study of the effective dissipation relevant in the thermally activated supercurrent decay presenting evidence of a substantial reduction of the dissipation level at low temperature. © 1999 American Institute of Physics.
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85.25.Cp Josephson devices
07.50.Hp Electrical noise and shielding equipment
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.25.Am Superconducting device characterization, design, and modeling

Vacuum-tunneling magnetoresistance: The role of spin-polarized surface states

R. Wiesendanger, M. Bode, and M. Getzlaff

Appl. Phys. Lett. 75, 124 (1999); http://dx.doi.org/10.1063/1.124296 (3 pages) | Cited 15 times

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We have studied magnetoresistance effects in Fe–vacuum–Gd tunnel junctions as a function of the applied bias voltage by using a scanning tunneling microscope operated under ultra-high-vacuum conditions. We found that the vacuum-tunneling magnetoresistance (VTMR) can be maximized by tunneling into highly spin-polarized surface states. By tuning the applied bias to the energetic positions of the spin-polarized surface states, a VTMR response as much as 31% at 70 K was obtained. This result is explained in terms of an enhancement caused by the spin-polarized surface state and a suppression of spin-flip tunneling processes compared to tunnel junctions with oxide barriers. © 1999 American Institute of Physics.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.40.Gk Tunneling
73.20.At Surface states, band structure, electron density of states
75.70.Ak Magnetic properties of monolayers and thin films

Superconducting tunneling as a probe of sputtered oxide barriers

C. L. Platt, A. S. Katz, R. C. Dynes, and A. E. Berkowitz

Appl. Phys. Lett. 75, 127 (1999); http://dx.doi.org/10.1063/1.124297 (3 pages) | Cited 3 times

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The tunneling properties of sputtered oxide barriers were studied in Pb/oxide/ferromagnet junctions. The initial oxide/ferromagnet bilayer was made without breaking vacuum. The bilayer was exposed to atmosphere before the deposition of a Pb counterelectrode in a separate vacuum chamber. I–V curves and conductance measurements at 1.5 K confirmed the presence of single-step, elastic tunneling in these structures. Separate experiments involving gold bottom electrodes, variation of exposure times in air between bilayer and Pb depositions, and plasma oxidation proved that the oxide layer is permeable, allowing for oxidation of the ferromagnetic base electrode. This revealed that the tunneling channels were due to the contribution of small-area junctions at thermally oxidized “pinhole” sites on the bottom electrode. © 1999 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.50.+r Tunneling phenomena; Josephson effects
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
81.15.Cd Deposition by sputtering
81.65.Mq Oxidation
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